PE4150MLAB - Peregrine Semiconductor Corp.

Page 1 of 10

Document No. 70-0242-06 │www.psemi.com

The PE4150 is an ultra-high linearity Quad MOSFET mixer

with an integrated LO amplifier. The LO amplifier allows for

LO drive levels of less than 0dBm to produce IIP3 values

similar to a Quad MOSFET Array driven with a 15 dBm LO

drive. The PE4150 operates with differential signals at the

RF and IF ports and the integrated LO buffer ampliﬁer

drives the mixer core. It can be used as an upconverter or

a downconverter.

The PE4150 is manufactured on Peregrine’s UltraCMOS™

process, a patented variation of silicon-on-insulator (SOI)

technology on a sapphire substrate, offering the

performance of GaAs with the economy and integration of

conventional CMOS.

Product Specification

UltraCMOS™ Low Frequency Passive

Mixer with Integrated LO Amplifier

Product Description

Figure 1. Functional Diagram

PE4150

Features

• Ultra-high linearity Quad MOSFET array

with integrated LO amplifier

• Ideal for mobile radio and Up/down

conversion applications

• Low conversion loss

• High LO Isolation

• Packaged in small 4x4x0.85mm

20-lead QFN

Figure 2. Package Type

4x4x.085 mm 20-Lead QFN

Not for new designs

Product Specification

PE4150

Page 2 of 10

Table 1. AC and DC Electrical Specifications

(V

DD

= 2.9 to 3.1 V, Temperature = -40 to +85 °C unless specified otherwise)

Notes: 1. The RF to IF Isolation is measured with an input frequency equal with IF.

2. IIP3 is measured with two tones at 0 dBm, 100kHz spacing

Parameters Min Typ Max Units

Current Drain (a function of frequency) 8 12 mA

Off state leakage current 20 µA

RF Input Frequency

VHF Band

UHF1 Band

UHF2 Band

700 MHz

800 MHz

900 MHz

136

380

450

764

851

935

174

470

520

776

870

941

MHz

LO Frequency

VHF Band

UHF1 Band

UHF2 Band

700 MHz

800 MHz

900 MHz

245.65

270.35

340.35

873.65

741.35

825.35

283.65

360.35

410.35

885.65

760.35

831.35

MHz

IF Output Frequency 44.85 109.65 MHz

LO Input Power -10 -6 dBm

RF Input Power 2 dBm

Conversion Loss

VHF, UHF1, UHF2

700, 800, and 900 MHz

6.5

7.5

8

8.7

dB

3

rd

Order Input Intercept (IIP3)

2

20 25 dBm

2

nd

Order Input Intercept (IIP2)

VHF, UHF1, UHF2

700, 800 and 900 MHz

41

35

60

50

dBm

RF to IF Isolation

1

VHF, UHF1, UHF2

700, 800 and 900 MHz

35

25

50

45

dB

LO to IF Isolation 20 30 dB

LO to RF Isolation 25 30 dB

Not for new designs

Product Specification

PE4150

Page 3 of 10

Document No. 70-0242-06 │www.psemi.com

Table 2. Pin Descriptions

Table 4. Absolute Maximum Ratings

Electrostatic Discharge (ESD) Precautions

When handling this UltraCMOS™ device, observe

the same precautions that you would use with other

ESD-sensitive devices. Although this device

contains circuitry to protect it from damage due to

ESD, precautions should be taken to avoid

exceeding the specified rating.

Latch-Up Avoidance

Unlike conventional CMOS devices, UltraCMOS™

devices are immune to latch-up.

Figure 3. Pin Configuration (Top View)

Exceeding absolute maximum ratings may cause

permanent damage. Operation should be restricted

to the limits in the Operating Ranges table.

Operation between operating range maximum and

absolute maximum for extended periods may reduce

reliability.

Symbol Parameters/Conditions Min Max Units

V

DD

Supply Voltage 4.0 V

V

DS

Maximum DC plus peak AC

across drain-source ±3.3 V

I

DS-DC

Maximum DC current across

drain-source 6 mA

T

ST

Storage temperature range -65 150 °C

V

ESD

ESD Voltage (HBM,

MIL_STD 883 Method

3015.7)

1000 V

I

DS-AC

Maximum AC current across

drain-source 36 mA

p-p

Tj Operating Junction

Temperature 125 °C

Device Description

The PE4150 passive broadband Quad MOSFET

array is designed for use in up-conversion and

down-conversion applications for high performance

systems such as mobile radios, cellular

infrastructure equipment, and STB/CATV systems.

The PE4150 is an ideal mixer core for a wide range

of mixer products, including module level solutions

that incorporate baluns or other single-ended

matching structures enabling three-port operation.

The performance level of this passive mixer is made

possible by the very high linearity afforded by

Peregrine’s UltraCMOS™ process.

The RF and IF pins are differential signals connected directly to the

passive mixer. The LO input can be differential or single-ended.

Pin # Symbol Description

1 GND Ground

2 INB Negative LO Input

3 INA Positive LO Input

4 N/C No Connect

5 N/C No Connect

6 EN Enable Pin (active low)

7 V

DD

V

DD

8 IF_P Positive IF port

9 GND Ground

10 IF_M Negative IF port

11 GND Ground

12 RF_P Positive RF Input

13 RF_M Negative LO Input

14 GND Ground

15 MixBias External Mixer Bias

16 N/C No Connect

17 N/C No Connect

18 V

DD

V

DD

19 V

DD

V

DD

20 GND Ground

Pad GND Exposed Ground Paddle

Symbol Parameters/Conditions Min Typ Max Units

V

DD

V

DD

Power Supply

Voltage 2.9 3.0 3.1 V

T

OP

Operating temperature

range -40 85 °C

Table 3. Operating Ranges

Moisture Sensitivity Level

The Moisture Sensitivity Level rating for the PE4150

in the 4x4x0.85 mm 20-lead QFN package is MSL3.

Not for new designs

Product Specification

PE4150

Page 4 of 10

Evaluation Kit Figure 4. Evaluation Board Layout

Peregrine Specification 101-0201-00A

The Mixer Evaluation Kit board was designed to

ease customer evaluation of the PE4150 Quad

MOSFET Mixer with integrated LO amplifier.

The RF and IF ports are connected through

50ohm transmission lines and 1:4 transmission

line transformers to J5 and J7, respectively. The

LO ports are connected through 50 Ω

transmission lines to J4 and J6, respectively, and

can support either a single-ended or differential

signal drive. With a single-ended input, no

termination is needed on the un-used port.

The board is constructed of a two metal layer FR4

with a total thickness of 0.062". The bottom layer

provides ground for the RF transmission lines.

The transmission lines were designed using a

coplanar waveguide with ground plane model

using a trace width of 0.037", trace gaps of 0.008",

dielectric thickness of 0.059" and metal thickness

of 0.0015".

J3 provides an optional external DC bias that can

be applied to the LO input, if there is DC

component to the applied RF input. To use this

option, transformers T2 and T3 must be carefully

chosen to allow the use of a non-zero common-

mode level.

J9 can be used to enable or disable the part. The

chip enable/EN is active low.

De-coupling capacitors are provided on the VDD

traces. These capacitors should be placed as

close to the DVDD pin as possible.

Not for new designs

Product Specification

PE4150

Page 5 of 10

Document No. 70-0242-06 │www.psemi.com

Figure 5. Evaluation Board Schematic

Peregrine Specification 102-0396

INB

Z=50 Ohm

INA

IF

MIXBIAS

OUTA

OUTB

Place C1,C2,C4,C5 close to DVDD Pin.

Z=50 Ohm

RF

Mounting Holes on PCB

(NOT USED - SEE NOTE 5)

LO

(OPTIONAL)

R21

DNI

J6

SMASM

R2

DNI

R1

DNI

1

2

3

J10

DNI

R18

DNI

R22

0 OHM

J1

DNI

R10

DNI

J4

DNI

1

2

J11

HEADER 2

1GND

2INB

3INA

4N/C

5N/C

6EN

7VDD_2

8IF_P

9GND

10 IF_N

11

GND

12

RF_P

13

RF_N

14

GND

15

MIXBIAS

16

N/C

17

N/C

18

VDD_2

19

VDD_1

20

GND

U1

MLPQ4X4

C7 51pF

1

4

6

3

2

T2

ETK4-2T

R15

51 Ohm

R23

DNI

R7

51 Ohm

1

2

3

J8

DNI

R5

DNI

R17

0 OHM

C4

10pF

C6 51pF

R11

DNIR16

DNI

J2

DNI

J7

SMASM

1MTG4

R25

DNI

1MTG2

R20

DNI

R3

0 OHM

R12

0 OHM

C3

10µF

R6

DNI

R4

0 OHM

1

4

6

3

2

T3

ETK4-2T

C5

0.01µF

R8

DNI

J5

SMASM

1MTG1

R19

DNI

R13

DNI

1MTG3

C1

10pF

J3

DNI

R9

DNI

R24

DNI

R14

DNI

1

2

3

J9

CON3

C2

0.01µF

VDD

LG2

LG1

LG0

Not for new designs

Product Specification

PE4150

Page 6 of 10

0

10

20

30

40

50

60

70

80

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

IIP2 w / LO_Pw r = -11dBm

IIP2 w / LO_Pw r = -10dBm

IIP2 w / LO_Pw r = -6dBm IIP2 w / LO_Pw r = -5dBm

IIP3 w / LO_Pw r = -11dBm

IIP3 w / LO_Pw r = -10dBm

IIP3 w / LO_Pw r = -6dBm IIP3 w / LO_Pw r = -5dBm

IIP2/IIP3 [dBm]

RF

0

1

2

3

4

5

6

7

8

9

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

-40 deg C +25 deg C +85 deg C

RF

0

1

2

3

4

5

6

7

8

9

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

LO_Pw r = -11dBm; VDD=3V

LO_Pw r = -10dBm; VDD=3V

LO_Pw r = -6dBm;VDD=3V

LO_Pw r = -5dBm; VDD=3V

LO_Pw r = -10dBm; VDD = 2.91V

LO_Pw r = -10dBm; VDD = 3.09

RF

Typical Performance Plots

Figure 7. Conversion Loss vs LO Power & VDD Figure 6. Conversion Loss vs Temperature

Figure 8. Linearity vs Temperature Figure 9. Linearity vs LO Power

(VDD = 3V; LO Pwr = -10 dBm) (Temp = 25° C)

(VDD = 3V; LO Pwr = -10 dBm) (VDD = 3V; Temp = +25° C)

0

10

20

30

40

50

60

70

80

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

IIP2 @ -40 deg C IIP2 @ +25 deg C

IIP2 @ +85 deg C IIP3 @ -40 deg C

IIP3 @ +25 deg C IIP3 @ +85 deg C

IIP2/IIP3 [dBm]

RF

Not for new designs

Product Specification

PE4150

Page 7 of 10

Document No. 70-0242-06 │www.psemi.com

0

10

20

30

40

50

60

70

80

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

IIP2 w / VDD = 2.91V IIP2 w / VDD = 3.0V

IIP2 w / VDD = 3.09V IIP3 w / VDD = 2.91V

IIP3 w / VDD = 3.0V IIP3 w / VDD = 3.09

IIP2/IIP3 [dBm]

RF

0

10

20

30

40

50

60

70

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

LO-IF Iso @ -40 degC LO-IF Iso @ +25 deg C

LO-IF Iso @ +85 deg C RF-IF Iso @ -40 deg C

RF-IF Iso @ +25 deg C RF-IF Iso @ +85 deg C

Isolation [dB]

RF

0

10

20

30

40

50

60

70

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

LO-IF Iso w / LO_Pw r = -11dBm

LO-IF Iso w / LO_Pw r = -10dBm

LO-IF Iso w / LO_Pw r = -6dBm

LO-IF Iso w / LO_Pw r = -5dBm

RF-IF Iso w / LO_Pw r = -11dBm

RF-IF Iso w / LO_Pw r = -10dBm

RF-IF Iso w / LO_Pw r = -6dBm

RF-IF Iso w / LO_Pw r = -5dBm

Isolation [dB]

RF

0

10

20

30

40

50

60

70

0 200 400 600 800 1000

Frequency [MHz]

Loss [dB]

LO-IF Iso w / VDD=2.91V

LO-IF Iso w / VDD=3.0V

LO-IF Iso w / VDD=3.09V

RF-IF Iso w / VDD=2.91V

RF-IF Iso w / VDD=3.0V

RF-IF Iso w / VDD=3.09V

Isolation [dB]

RF

Figure 10. Linearity vs VDD Figure 11. Isolation vs Temperature

Figure 12. Isolation vs LO Power Figure 13. Isolation vs VDD

(Temp = +25° C; LO Pwr = -10 dBm) (VDD = 3V; LO Pwr = -10 dBm)

(VDD = 3V; Temp = +25° C) (Temp = +25 deg C; LO Pwr = -10 dBm)

Typical Performance Plots

Not for new designs

Product Specification

PE4150

Page 8 of 10

Figure 14. Package Drawing

4x4x0.85 mm 20-lead QFN

Not for new designs

Product Specification

PE4150

Page 9 of 10

Document No. 70-0242-06 │www.psemi.com

Table 5. Ordering Information

Figure 16. Marking Specification

4150

YYWW

ZZZZZ

YYWW = Date Code (Year, Work Week)

ZZZZZ = Last five digits of PSC Lot Number

Order Code Part Marking Description Package Shipping Method

EK-4150-01 PE4150-EK PE4150 – 20QFN 4x4mm-EK Evaluation Kit 1 / Box

PE4150MLAB 4150 PE4150 G - 20QFN 4x4mm Green 20-lead 4x4mm QFN 75 units

PE4150MLAB-Z 4150 PE4150 G –20QFN 4x4mm-3000C Green 20-lead 4x4mm QFN 3000 units / T&R

Figure 15. Tape and Reel Drawing

Device Orientation in Tape

Top of

Device

Pin 1

Tape Feed Direction

Not for new designs

Product Specification

PE4150

Page 10 of 10

Sales Offices

The Americas

Peregrine Semiconductor Corporation

9380 Carroll Park Drive

San Diego, CA 92121

Tel: 858-731-9400

Fax: 858-731-9499

Europe

Peregrine Semiconductor Europe

Bâtiment Maine

13-15 rue des Quatre Vents

F-92380 Garches, France

Tel: +33-1-4741-9173

Fax : +33-1-4741-9173

For a list of representatives in your area, please refer to our

Web site at: www.psemi.com

Data Sheet Identification

Advance Information

The product is in a formative or design stage. The data

sheet contains design target specifications for product

development. Specifications and features may change in

any manner without notice.

Preliminary Specification

The data sheet contains preliminary data. Additional data

may be added at a later date. Peregrine reserves the right

to change specifications at any time without notice in order

to supply the best possible product.

Product Specification

The data sheet contains final data. In the event Peregrine

decides to change the specifications, Peregrine will notify

customers of the intended changes by issuing a CNF

(Customer Notification Form).

The information in this data sheet is believed to be reliable.

However, Peregrine assumes no liability for the use of this

information. Use shall be entirely at the user’s own risk.

No patent rights or licenses to any circuits described in this

data sheet are implied or granted to any third party.

Peregrine’s products are not designed or intended for use in

devices or systems intended for surgical implant, or in other

applications intended to support or sustain life, or in any

application in which the failure of the Peregrine product could

create a situation in which personal injury or death might occur.

Peregrine assumes no liability for damages, including

consequential or incidental damages, arising out of the use of

its products in such applications.

The Peregrine name, logo, and UTSi are registered trademarks

and UltraCMOS, HaRP, MultiSwitch and DuNE are trademarks

of Peregrine Semiconductor Corp.

High-Reliability and Defense Products

Americas

San Diego, CA, USA

Phone: 858-731-9475

Fax: 848-731-9499

Europe/Asia-Pacific

Parc Cezanne 1

380 Avenue Archimède

Parc de la Duranne

13857 Aix-En-Provence Cedex 3

France

Tel: +33(0)-4-4239-3361

Fax: +33(0)-4-4269-7227

Peregrine Semiconductor, Asia Pacific (APAC)

Shanghai, 200040, P.R. China

Tel: +86-21-5836-8276

Fax: +86-21-5836-7652

Peregrine Semiconductor, Korea

#B-2607, Kolon Tripolis, 210

Geumgok-dong, Bundang-gu, Seongnam-si

Gyeonggi-do, 463-943 South Korea

Tel: +82-31-728-3939

Fax: +82-31-728-3940

Peregrine Semiconductor K.K., Japan

601 Yaesu Kyodo Building

2-5-9 Yaesu, Chuo-ku

Tokyo 104-0028 Japan

Tel: +81-3-3527-9841

Fax: +81-3-3527-9848

Not for new designs