Product Specification PE4150 UltraCMOSTM Low Frequency Passive Mixer with Integrated LO Amplifier * Ultra-high linearity Quad MOSFET array with integrated LO amplifier * Ideal for mobile radio and Up/down conversion applications * Low conversion loss * High LO Isolation * Packaged in small 4x4x0.85mm 20-lead QFN de s The PE4150 is manufactured on Peregrine's UltraCMOSTM process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Features ns The PE4150 is an ultra-high linearity Quad MOSFET mixer with an integrated LO amplifier. The LO amplifier allows for LO drive levels of less than 0dBm to produce IIP3 values similar to a Quad MOSFET Array driven with a 15 dBm LO drive. The PE4150 operates with differential signals at the RF and IF ports and the integrated LO buffer amplifier drives the mixer core. It can be used as an upconverter or a downconverter. ig Product Description N ot fo r ne w Figure 1. Functional Diagram Figure 2. Package Type 4x4x.085 mm 20-Lead QFN Document No. 70-0242-06 www.psemi.com (c)2010 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 10 PE4150 Product Specification Table 1. AC and DC Electrical Specifications (VDD = 2.9 to 3.1 V, Temperature = -40 to +85 C unless specified otherwise) Parameters Min Typ Max Units 8 12 mA 20 A 136 380 450 764 851 935 174 470 520 776 870 941 MHz MHz MHz MHz MHz MHz LO Frequency VHF Band UHF1 Band UHF2 Band 700 MHz 800 MHz 900 MHz 245.65 270.35 340.35 873.65 741.35 825.35 283.65 360.35 410.35 885.65 760.35 831.35 MHz MHz MHz MHz MHz MHz IF Output Frequency 44.85 109.65 MHz -6 dBm 2 dBm 8 8.7 dB dB Current Drain (a function of frequency) LO Input Power -10 RF Input Power w Conversion Loss VHF, UHF1, UHF2 700, 800, and 900 MHz ne 3rd Order Input Intercept (IIP3)2 nd fo r 2 Order Input Intercept (IIP2) VHF, UHF1, UHF2 700, 800 and 900 MHz LO to RF Isolation 6.5 7.5 20 25 dBm 41 35 60 50 dBm dBm 35 25 50 45 dB dB 20 30 dB 25 30 dB 1. The RF to IF Isolation is measured with an input frequency equal with IF. N Notes: ot RF to IF Isolation1 VHF, UHF1, UHF2 700, 800 and 900 MHz LO to IF Isolation ig de s RF Input Frequency VHF Band UHF1 Band UHF2 Band 700 MHz 800 MHz 900 MHz ns Off state leakage current 2. IIP3 is measured with two tones at 0 dBm, 100kHz spacing (c)2010 Peregrine Semiconductor Corp. All rights reserved. Page 2 of 10 Document No. 70-0242-06 UltraCMOSTM RFIC Solutions PE4150 Product Specification Figure 3. Pin Configuration (Top View) Table 4. Absolute Maximum Ratings Symbol Max Units VDD Supply Voltage 4.0 V VDS Maximum DC plus peak AC across drain-source 3.3 V IDS-DC Maximum DC current across drain-source 6 mA IDS-AC Maximum AC current across drain-source 36 mAp-p 150 C 125 C 1000 V Storage temperature range Tj Operating Junction Temperature Description GND Ground 2 INB Negative LO Input 3 INA Positive LO Input 4 N/C No Connect 5 N/C No Connect 6 EN Enable Pin (active low) 7 VDD VDD 8 IF_P Positive IF port 9 GND Ground 10 IF_M Negative IF port 11 GND Ground 12 RF_P Positive RF Input 13 RF_M Negative LO Input 14 GND Ground 15 MixBias External Mixer Bias 16 N/C No Connect 17 N/C No Connect 18 VDD VDD 19 VDD VDD 20 GND Pad GND w ne fo r ot N The RF and IF pins are differential signals connected directly to the passive mixer. The LO input can be differential or single-ended. Table 3. Operating Ranges VDD VDD Power Supply Voltage 2.9 TOP Operating temperature range -40 3.0 Max Units 3.1 V 85 C Moisture Sensitivity Level The Moisture Sensitivity Level rating for the PE4150 in the 4x4x0.85 mm 20-lead QFN package is MSL3. Document No. 70-0242-06 www.psemi.com Electrostatic Discharge (ESD) Precautions When handling this UltraCMOSTM device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the specified rating. Unlike conventional CMOS devices, UltraCMOSTM devices are immune to latch-up. Exposed Ground Paddle Typ Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. Latch-Up Avoidance Ground Symbol Parameters/Conditions Min ESD Voltage (HBM, MIL_STD 883 Method 3015.7) -65 ig 1 VESD Min de s Symbol ns TST Table 2. Pin Descriptions Pin # Parameters/Conditions Device Description The PE4150 passive broadband Quad MOSFET array is designed for use in up-conversion and down-conversion applications for high performance systems such as mobile radios, cellular infrastructure equipment, and STB/CATV systems. The PE4150 is an ideal mixer core for a wide range of mixer products, including module level solutions that incorporate baluns or other single-ended matching structures enabling three-port operation. The performance level of this passive mixer is made possible by the very high linearity afforded by Peregrine's UltraCMOSTM process. (c)2010 Peregrine Semiconductor Corp. All rights reserved. Page 3 of 10 PE4150 Product Specification Evaluation Kit Figure 4. Evaluation Board Layout Peregrine Specification 101-0201-00A The Mixer Evaluation Kit board was designed to ease customer evaluation of the PE4150 Quad MOSFET Mixer with integrated LO amplifier. ig de s fo r ne J3 provides an optional external DC bias that can be applied to the LO input, if there is DC component to the applied RF input. To use this option, transformers T2 and T3 must be carefully chosen to allow the use of a non-zero commonmode level. w The board is constructed of a two metal layer FR4 with a total thickness of 0.062". The bottom layer provides ground for the RF transmission lines. The transmission lines were designed using a coplanar waveguide with ground plane model using a trace width of 0.037", trace gaps of 0.008", dielectric thickness of 0.059" and metal thickness of 0.0015". ns The RF and IF ports are connected through 50ohm transmission lines and 1:4 transmission line transformers to J5 and J7, respectively. The LO ports are connected through 50 transmission lines to J4 and J6, respectively, and can support either a single-ended or differential signal drive. With a single-ended input, no termination is needed on the un-used port. N ot J9 can be used to enable or disable the part. The chip enable/EN is active low. De-coupling capacitors are provided on the VDD traces. These capacitors should be placed as close to the DVDD pin as possible. (c)2010 Peregrine Semiconductor Corp. All rights reserved. Page 4 of 10 Document No. 70-0242-06 UltraCMOSTM RFIC Solutions PE4150 Product Specification Figure 5. Evaluation Board Schematic Peregrine Specification 102-0396 J11 HEADER 2 Z=50 Ohm R1 Place C1,C2,C4,C5 close to DVDD Pin. VDD J1 DNI OUTB (NOT USED - SEE NOTE 5) DNI VDD 1 2 VDD C1 10pF R2 C2 0.01F Z=50 Ohm J2 DNI Z=50 Ohm J3 DNI OUTA (NOT USED - SEE NOTE 5) DNI C3 10F C4 10pF C5 0.01F MIXBIAS (OPTIONAL) 1 GND 2 INB 16 18 19 17 N/C N/C 14 DNI RF_N 13 RF_P 12 GND 11 R19 DNI LG2 R20 DNI R21 DNI J8 DNI LG1 J9 CON3 RF R10 DNI R11 DNI 1 0 OHM w T2 6 ETK4-2T LG0 ne VDD 4 1 2 3 R17 0 OHM J5 SMASM R22 2 VDD 3 1 2 3 Z=50 Ohm DNI 4 de s DNI VDD R9 ns IF_N R16 DNI R18 J10 DNI 6 R13 DNI ig 6 R15 51 Ohm 3 VDD 1 2 3 T3 ETK4-2T 1 2 10 N/C GND 51pF 9 C7 5 0 OHM R14 DNI R8 GND N/C EN R12 INA 15 U1 MLPQ4X4 INA IF_P 4 8 3 Z=50 Ohm R5 DNI MIXBIAS 51 Ohm LO J6 SMASM VDD_2 51pF GND C6 R7 VDD_1 R4 0 OHM R6 DNI VDD_2 Z=50 Ohm 7 J4 DNI INB 20 R3 0 OHM R23 DNI R24 DNI Mounting Holes on PCB MTG1 MTG2 MTG3 MTG4 R25 fo r DNI N ot Z=50 Ohm 1 1 1 1 Document No. 70-0242-06 www.psemi.com J7 SMASM IF (c)2010 Peregrine Semiconductor Corp. All rights reserved. Page 5 of 10 PE4150 Product Specification Typical Performance Plots Figure 6. Conversion Loss vs Temperature Figure 7. Conversion Loss vs LO Power & VDD (VDD = 3V; LO Pwr = -10 dBm) +85 deg C 8 8 7 7 6 6 5 5 4 de s 4 3 3 2 2 1 w 1 0 200 400 600 800 0 Figure 8. Linearity vs Temperature 600 800 1000 (VDD = 3V; Temp = +25 C) ot N 80 400 Figure 9. Linearity vs LO Power (VDD = 3V; LO Pwr = -10 dBm) IIP2 @ -40 deg C IIP2 @ +85 deg C IIP3 @ +25 deg C 200 RF Frequency [MHz] fo r RF Frequency [MHz] 0 1000 ne 0 IIP2 @ +25 deg C IIP3 @ -40 deg C IIP3 @ +85 deg C 70 70 60 60 50 50 40 30 20 10 IIP2 w / LO_Pw r IIP2 w / LO_Pw r IIP3 w / LO_Pw r IIP3 w / LO_Pw r 80 Loss[dBm] [dB] IIP2/IIP3 Loss[dBm] [dB] IIP2/IIP3 = -11dBm; VDD=3V = -10dBm; VDD=3V = -6dBm;VDD=3V = -5dBm; VDD=3V = -10dBm; VDD = 2.91V = -10dBm; VDD = 3.09 ns 9 Loss [dB] Loss [dB] +25 deg C LO_Pw r LO_Pw r LO_Pw r LO_Pw r LO_Pw r LO_Pw r ig -40 deg C 9 (Temp = 25 C) = -11dBm = -6dBm = -11dBm = -6dBm IIP2 w / LO_Pw r IIP2 w / LO_Pw r IIP3 w / LO_Pw r IIP3 w / LO_Pw r = -10dBm = -5dBm = -10dBm = -5dBm 40 30 20 10 0 0 0 200 400 600 800 RF Frequency [MHz] (c)2010 Peregrine Semiconductor Corp. All rights reserved. Page 6 of 10 1000 0 200 400 600 800 1000 RF Frequency [MHz] Document No. 70-0242-06 UltraCMOSTM RFIC Solutions PE4150 Product Specification Typical Performance Plots Figure 10. Linearity vs VDD Figure 11. Isolation vs Temperature (VDD = 3V; LO Pwr = -10 dBm) (Temp = +25 C; LO Pwr = -10 dBm) IIP2 w / VDD = 2.91V IIP2 w / VDD = 3.09V IIP3 w / VDD = 3.0V 80 IIP2 w / VDD = 3.0V IIP3 w / VDD = 2.91V IIP3 w / VDD = 3.09 70 70 50 30 40 ns 40 30 ig Loss [dB] Isolation [dB] 50 20 de s 20 10 10 0 0 0 200 400 600 800 1000 0 200 ne Figure 12. Isolation vs LO Power ot N 50 50 Loss [dB] Isolation [dB] 60 30 40 30 20 20 10 10 0 0 0 200 400 600 RF Frequency [MHz] Document No. 70-0242-06 www.psemi.com 800 1000 1000 LO-IF Iso w / VDD=2.91V LO-IF Iso w / VDD=3.0V LO-IF Iso w / VDD=3.09V RF-IF Iso w / VDD=2.91V RF-IF Iso w / VDD=3.0V RF-IF Iso w / VDD=3.09V 70 60 40 800 (Temp = +25 deg C; LO Pwr = -10 dBm) LO-IF Iso w / LO_Pw r = -11dBm LO-IF Iso w / LO_Pw r = -10dBm LO-IF Iso w / LO_Pw r = -6dBm LO-IF Iso w / LO_Pw r = -5dBm RF-IF Iso w / LO_Pw r = -11dBm RF-IF Iso w / LO_Pw r = -10dBm RF-IF Iso w / LO_Pw r = -6dBm RF-IF Iso w / LO_Pw r = -5dBm 70 600 Figure 13. Isolation vs VDD fo r (VDD = 3V; Temp = +25 C) 400 RF Frequency [MHz] w RF Frequency [MHz] Loss [dB] Isolation [dB] LO-IF Iso @ +25 deg C RF-IF Iso @ -40 deg C RF-IF Iso @ +85 deg C 60 60 Loss [dB] IIP2/IIP3 [dBm] LO-IF Iso @ -40 degC LO-IF Iso @ +85 deg C RF-IF Iso @ +25 deg C 0 200 400 600 800 1000 RF Frequency [MHz] (c)2010 Peregrine Semiconductor Corp. All rights reserved. Page 7 of 10 PE4150 Product Specification Figure 14. Package Drawing N ot fo r ne w de s ig ns 4x4x0.85 mm 20-lead QFN (c)2010 Peregrine Semiconductor Corp. All rights reserved. Page 8 of 10 Document No. 70-0242-06 UltraCMOSTM RFIC Solutions PE4150 Product Specification Pin 1 Top of Device ne w de s Tape Feed Direction ig ns Figure 15. Tape and Reel Drawing ot fo r Figure 16. Marking Specification Device Orientation in Tape N 4150 YYWW ZZZZZ YYWW = Date Code (Year, Work Week) ZZZZZ = Last five digits of PSC Lot Number Table 5. Ordering Information Order Code Part Marking Description Package Shipping Method EK-4150-01 PE4150-EK PE4150 - 20QFN 4x4mm-EK Evaluation Kit 1 / Box PE4150MLAB 4150 PE4150 G - 20QFN 4x4mm Green 20-lead 4x4mm QFN 75 units PE4150MLAB-Z 4150 PE4150 G -20QFN 4x4mm-3000C Green 20-lead 4x4mm QFN 3000 units / T&R Document No. 70-0242-06 www.psemi.com (c)2010 Peregrine Semiconductor Corp. All rights reserved. Page 9 of 10 PE4150 Product Specification Sales Offices The Americas Peregrine Semiconductor Corporation Peregrine Semiconductor, Asia Pacific (APAC) 9380 Carroll Park Drive San Diego, CA 92121 Tel: 858-731-9400 Fax: 858-731-9499 Shanghai, 200040, P.R. China Tel: +86-21-5836-8276 Fax: +86-21-5836-7652 Peregrine Semiconductor, Korea Europe #B-2607, Kolon Tripolis, 210 Geumgok-dong, Bundang-gu, Seongnam-si Gyeonggi-do, 463-943 South Korea Tel: +82-31-728-3939 Fax: +82-31-728-3940 Peregrine Semiconductor Europe ns Batiment Maine 13-15 rue des Quatre Vents F-92380 Garches, France Tel: +33-1-4741-9173 Fax : +33-1-4741-9173 ig Peregrine Semiconductor K.K., Japan 601 Yaesu Kyodo Building 2-5-9 Yaesu, Chuo-ku Tokyo 104-0028 Japan Tel: +81-3-3527-9841 Fax: +81-3-3527-9848 de s High-Reliability and Defense Products w Americas San Diego, CA, USA Phone: 858-731-9475 Fax: 848-731-9499 fo r ne Europe/Asia-Pacific Parc Cezanne 1 380 Avenue Archimede Parc de la Duranne 13857 Aix-En-Provence Cedex 3 France Tel: +33(0)-4-4239-3361 Fax: +33(0)-4-4269-7227 For a list of representatives in your area, please refer to our Web site at: www.psemi.com N Advance Information ot Data Sheet Identification The product is in a formative or design stage. The data sheet contains design target specifications for product development. Specifications and features may change in any manner without notice. The information in this data sheet is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user's own risk. No patent rights or licenses to any circuits described in this data sheet are implied or granted to any third party. Preliminary Specification The data sheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification The data sheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended changes by issuing a CNF (Customer Notification Form). (c)2010 Peregrine Semiconductor Corp. All rights reserved. Page 10 of 10 Peregrine's products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. The Peregrine name, logo, and UTSi are registered trademarks and UltraCMOS, HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp. Document No. 70-0242-06 UltraCMOSTM RFIC Solutions