BYG20D thru BYG20J www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated junction * Low reverse current * Soft recovery characteristics * Ultrafast reverse recovery time * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AC (SMA) * AEC-Q101 qualified * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification of power supply, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 200 V to 600 V IFSM 30 A IR 1.0 A VF 1.4 V trr 75 ns ER 20 mJ TJ max. 150 C MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code BYG20D BYG20G BYG20J BYG20D BYG20G BYG20J 200 400 600 UNIT Maximum repetitive peak reverse voltage VRRM Average forward current IF(AV) 1.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A ER 20 mJ TJ, TSTG - 55 to + 150 C Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 C Operating junction and storage temperature range Revision: 21-Dec-11 V Document Number: 88958 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG20D thru BYG20J www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) TEST CONDITIONS PARAMETER SYMBOL Maximum instantaneous forward voltage IF = 1 A Maximum DC reverse current VR = VRRM Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TJ = 25 C IF = 1.5 A TJ = 25 C TJ = 100 C BYG20D BYG20G BYG20J UNIT 1.3 VF (1) V 1.4 1 IR A 10 trr 75 ns Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SYMBOL PARAMETER Typical thermal resistance, junction to lead, TL = const. BYG20D BYG20G RJL C/W 150 RJA (2) 125 (3) 100 RJA UNIT 25 (1) RJA Typical thermal resistance, junction to ambient BYG20J C/W Notes (1) Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 m Cu (3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 m Cu 2 3 ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYG20D-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYG20D-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG20DHE3/TR (1) 0.064 TR 1800 7" diameter plastic tape and reel 0.064 TR3 7500 13" diameter plastic tape and reel PREFERRED P/N BYG20DHE3/TR3 (1) Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 1.6 Average Forward Current (A) 10 Forward Current (A) TJ = 150 C 1 TJ = 25 C 0.1 0.01 VR = VRRM Half Sine-Wave RJA 25 K/W 1.4 1.2 1.0 0.8 RJA 125 K/W 0.6 RJA 150 K/W 0.4 0.2 0.001 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160 Forward Voltage (V) Ambient Temperature (C) Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Revision: 21-Dec-11 Document Number: 88958 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG20D thru BYG20J www.vishay.com Vishay General Semiconductor 600 100 IR = 0.5 A, iR = 0.125 A Reverse Recovery Time (ns) Reverse Current (A) VR = VRRM 10 1 400 TA = 125 C 300 TA = 100 C 200 TA = 75 C TA = 50 C 100 TA = 25 C 0 25 50 75 100 125 150 0 0.2 0.4 0.6 1.0 0.8 Junction Temperature (C) Forward Current (A) Fig. 3 - Reverse Current vs. Junction Temperature Fig. 6 - Reverse Recovery Time vs. Forward Current 70 200 IR = 0.5 A, iR = 0.125 A VR = VRRM 60 Reverse Recovery Charge (nC) Reverse Power Dissipation (mW) 500 50 PR - Limit at 100 % VR 40 30 PR - Limit at 80 % VR 20 10 150 TA = 125 C TA = 100 C 100 TA = 75 C 50 TA = 50 C TA = 25 C 0 0 25 50 75 100 125 0 150 0.2 0.4 0.6 0.8 1.0 Forward Current (A) Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 7 - Reverse Recovery Charge vs. Forward Current Thermal Resistance for Pulse Cond. (K/W) Junction Temperature (C) 30 f = 1 MHz Diode Capacitance (pF) 25 20 15 10 5 0 0.1 1 10 100 1000 125 K/W DC 100 tp/T = 0.5 tp/T = 0.2 tp/T = 0.1 10 tp/T = 0.05 tp/T = 0.02 Single Pulse tp/T = 0.01 1 10-5 10-4 10-3 10-2 10-1 100 Reverse Voltage (V) Pulse Length (s) Fig. 5 - Diode Capacitance vs. Reverse Voltage Fig. 8 - Thermal Response Revision: 21-Dec-11 101 102 Document Number: 88958 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG20D thru BYG20J www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 21-Dec-11 Document Number: 88958 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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