NPN SILICON PLANAR R.F.
MEDIUM POWER TRANSISTOR
ISSUE 2 MARCH 94
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 55 V
Collector-Emitter Voltage VCEO
VCER
30
55
V
V
Emitter-Base Voltage VEBO 3.5 V
Continuous Collector Current IC400 mA
Power Dissipation Ptot 1.5 W
Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 55 V IC=100µA, IE=0
Collector-Emitter
Sustaining Voltage
V(BR)CEO(sus)
V(BR)CER(sus)
30
55
V IC=5mA, IB=0
IC=5mA, RBE
=10Ω
Emitter-Base
Breakdown Voltage
V(BR)EBO 3.5 V IE=100µA,IC=0
Collector-Emitter
Cut-Off Current
ICEO 20 µAVCB
=45V
Collector-Emitter
Saturation Voltage
VCE(SAT) 1.0 V IC=100mA, IB.=20mA
Static Forward
Current Transfer
hFE 15 IC=50mA, VCE
=5V
Transitional
Frequency
fT500 800 MHz IC=25mA, VCE
=15V
f=100MHz
Output Capacitance Cobo 3.0 pF VCE
=15V, IC=25mA
f=100MHz
R.F. power output POUT 350 440 mW VCC
=12V, PIN
=80mW
f=400MHz
Efficiency η50 70 %
ZTX327
PAGE NO
C
B
E
E-Line
TO92 Compatible
