SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A
2006-10-30
1
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM1 2G48, USM12G48, SM12J48, USM12J48
SM12G48A, USM12G48A, SM12J48 A, USM12J48A
AC POWER CONTROL APPLICATIONS
z Repetitive Peak Off-State Voltage : VDRM=400V, 600V
z R.M.S. On-State Current : IT (RMS) =12A
z Gate Trigger Current : IGT=30mA Max.
: IGT=20mA Max. (“A”Type)
Unit: mm
SM12G48, SM12J48, SM12G48A, SM12J48A USM12G48, USM12J48, USM12G48A, USM12J48A
JEDEC ― JEDEC ―
JEITA ― JEITA ―
TOSHIBA 13-10J1A TOSHIBA 13-10J2A
Weight: 1.7g
MARKING
Part No.
(or abbreviation code) Part No.
SM12G48, SM12G48A
M12G48
USM12G48, USM12G48A
SM12J48, SM12J48A
*1
M12J48
USM12J48, USM12J48A
SM12G48, SM12J48
Nothing
USM12G48, USM12J48
SM12G48A, SM12J48A
*2
A
USM12G48A, USM12J48A
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
M12G48
Characteristics
indicator*2
Part No. (or abbreviation code) *1
SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A
2006-10-30
2
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC SYMBOL RATING UNIT
(U)SM12G48
(U)SM12G48A 400
Repetitive Peak
Off-State Voltage (U)SM12J48
(U)SM12J48A
VDRM
600
V
R.M.S On-State Current IT (RMS) 12 A
120 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive) ITSM
132 (60Hz)
A
I2t Limit Value I2t 72 A2s
Critical Rate of Rise of
On-State Current (Note 1) di /dt 50 A / µs
Peak Gate Power Dissipation PGM 5 W
Average Gate Power Dissipation PG (AV) 0.5 W
Peak Forward Gate Voltage VGM 10 V
Peak Forward Gate Current IGM 2 A
Junction Temperature Tj −40~125 °C
Storage Temperature Range Tstg −40~125 °C
Note 1 : VDRM=0.5×Rated
ITM≤15A
tgw≥10µs
tgr≤250ns
igp=IGT×2.0
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A
2006-10-30
3
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Repetitive Peak Off-State Current IDRM V
DRM=Rated ― ― 20 µA
I T2 (+) , Gate (+)― ― 1.5
II T2 (+) , Gate (−)― ― 1.5
III T2 (−) , Gate (−)― ― 1.5
Gate Trigger Voltage
IV
VGT VD=12V
RL=20Ω
T2 (−) , Gate (+)― ― ―
V
I T2 (+) , Gate (+)― ― 30
II T2 (+) , Gate (−)― ― 30
III T2 (−) , Gate (−)― ― 30
SM12G48
SM12J48
IV T2 (−) , Gate (+)― ― ―
I T2 (+) , Gate (+)― ― 20
II T2 (+) , Gate (−)― ― 20
III T2 (−) , Gate (−)― ― 20
Gate Trigger
Current
SM12G48A
SM12J48A
IV
IGT VD=12V
RL=20Ω
T2 (−) , Gate (+)― ― ―
mA
Peak On-State Voltage VTM I
TM=17A ― ― 1.5 V
Gate Non-Trigger Voltage VGD V
D=Rated, Tc=125°C 0.2 ― ― V
Holding Current IH V
D=12V, ITM=1A ― ― 50 mA
Thermal Resistance Rth (j-c) Junction to Case, AC ― ― 2.4 °C / W
(U)SM12G48
(U)SM12J48 ― 300 ―
Critical Rate of Rise of
Off-State Voltage (U)SM12G48A
(U)SM12J48A
dv / dt VDRM=Rated, Tj=125°C
Exponential Rise
― 200 ―
V / µs
(U)SM12G48
(U)SM12J48 10 ― ―
Critical Rate of Rise of
Off-State Voltage at
Commutation (U)SM12G48A
(U)SM12J48A
(dv / dt) c VDRM=400V, Tj=125°C
(di / dt) c=−6.5A / ms
4 ― ―
V / µs
SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A
2006-10-30
4
SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A
2006-10-30
5
SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A
2006-10-30
6
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
