2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK3564 Switching Regulator Applications * * * * Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 3 Pulse (Note 1) IDP 9 Drain power dissipation (Tc = 25C) PD 40 W Single pulse avalanche energy (Note 2) EAS 408 mJ Avalanche current IAR 3 A Repetitive avalanche energy (Note 3) EAR 4.0 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C Drain current 1: Gate 2: Drain 3: Source A JEDEC JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics 2 Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.125 C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 C/W 1 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C, L = 83 mH, IAR = 3.0 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature 3 This transistor is an electrostatic-sensitive device. Please handle with caution. Start of commercial production 2002-06 1 2013-11-01 2SK3564 Electrical Characteristics (Ta = 25C) Characteristics Symbol Min Typ. Max Unit IGSS VGS = 25 V, VDS = 0 V 10 A V (BR) GSS IG = 10 A, VDS = 0 V 30 V IDSS VDS = 720 V, VGS = 0 V 100 A Gate leakage current Gate-source breakdown voltage Test Condition Drain cut-off current V (BR) DSS ID = 10 mA, VGS = 0 V 900 V Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 1.5 A 3.7 4.3 Forward transfer admittance Yfs VDS = 20 V, ID = 1.5 A 0.65 2.6 S Input capacitance Ciss 700 Reverse transfer capacitance Crss 15 Output capacitance Coss 75 VOUT 20 RL = 133 60 35 125 17 10 7 Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton 50 Switching time Fall time ID = 1.5 A 10 V VGS 0V tr tf Turn-off time VDD 200 V Duty 1%, tw = 10 s toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD 400 V, VGS = 10 V, ID = 3 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR 3 A Pulse drain reverse current IDRP 9 A (Note 1) Forward voltage (diode) VDSF IDR = 3 A, VGS = 0 V -1.9 V Reverse recovery time trr IDR = 3 A, VGS = 0 V, 850 ns Qrr dIDR/dt = 100 A/s 4.7 C Reverse recovery charge Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K3564 Please contact your TOSHIBA sales representative for details as to Part No. (or abbreviation code) environmental matters such as the RoHS compatibility of Product. Lot No. Note 4 The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 2SK3564 ID - VDS ID - VDS 10 8 (A) COMMON SOURCE Tc = 25C PULSE TEST 5 3 6 DRAIN CURRENT ID DRAIN CURRENT ID (A) 4 5.5 2 5.25 5 1 4 COMMON SOURCE Tc = 25C PULSE TEST 8 6 3 5.5 2 5.25 5 1 4.75 4.75 0 0 VGS = 4.5 V VGS = 4.5 V 4 8 12 16 DRAIN-SOURCE VOLTAGE 20 0 0 24 VDS (V) 10 20 ID - VGS VDS (V) (A) DRAIN CURRENT ID 4 VDS = 20 V DRAIN-SOURCE VOLTAGE PULSE TEST 3 2 Tc = -55C 100 1 0 0 25 2 4 6 8 GATE-SOURCE VOLTAGE 10 12 VGS (V) COMMON SOURCE Tc = 25 20 PULSE TEST 15 ID = 3 A 10 1.5 5 0.8 0 0 4 8 12 16 GATE-SOURCE VOLTAGE Yfs - ID VGS 20 (V) RDS (ON) - ID Tc = -55C 25 1 100 0.1 COMMON SOURCE VDS = 20 V PULSE TEST 1 DRAIN CURRENT ID DRAIN-SOURCE ON RESISTANCE RDS (ON) () 10 0.1 VDS 25 (V) 10 0.01 0.01 40 VDS - VGS COMMON SOURCE 5 30 DRAIN-SOURCE VOLTAGE 6 FORWARD TRANSFER ADMITTANCE Yfs (S) 10 10 (A) COMMON SOURCE Tc = 25C PULSE TEST 5 VGS = 10 V 3 1 0.01 0.1 1 DRAIN CURRENT ID 3 10 (A) 2013-11-01 2SK3564 RDS (ON) - Tc IDR - VDS 10 COMMON SOURCE COMMON SOURCE PULSE TEST DRAIN REVERSE CURRENT IDR (A) 16 12 ID = 3 A 8 1.5 VGS = 10 V 0.8 4 5 Tc = 25C PULSE TEST 3 1 0.5 0.3 10 VGS =1, 0, -1 V 3 0 -80 -40 0 40 80 CASE TEMPERATURE 120 Tc 0.1 0 160 (C) -0.4 -0.8 DRAIN-SOURCE VOLTAGE CAPACITANCE - VDS GATE THRESHOLD VOLTAGE Vth (V) (V) Coss 100 COMMON SOURCE VGS = 0 V Crss Tc = 25C 1 10 DRAIN-SOURCE VOLTAGE 2 COMMON SOURCE 1 (V) VDS (V) DRAIN-SOURCE VOLTAGE 40 20 CASE TEMPERATURE -40 0 40 80 120 Tc 160 (C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 60 80 ID = 1 mA CASE TEMPERATURE PD - Tc 40 VDS = 10 V PULSE TEST 0 -80 100 VDS 3 120 Tc 160 20 500 400 VDD = 100 V 300 200 8 COMMON SOURCE ID = 3 A 100 4 Tc = 25C PULSE TEST 0 0 4 8 12 TOTAL GATE CHARGE 4 12 400 VGS 200 0 (C) 16 VDS 16 Qg 20 (V) 1 0.1 4 VGS CAPACITANCE C (pF) Ciss f = 1 MHz DRAIN POWER DISSIPATION PD (W) VDS 5 1000 0 0 -1.6 Vth - Tc 10000 10 -1.2 GATE-SOURCE VOLTAGE DRAIN-SOURCE ON-RESISTANCE RDS (ON) ( ) 20 24 (nC) 2013-11-01 2SK3564 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth - tw 10 1 Duty=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t SINGLE PULSE 0.01 T 0.01 Duty = t/T Rth (ch-c) = 3.125C/W 0.001 10 100 1 10 PULSE WIDTH 100 1 tw (s) SAFE OPERATING AREA EAS - Tch 500 ID max (PULSED) * AVALANCHE ENERGY EAS (mJ) DRAIN CURRENT ID (A) 100 10 100 s * ID max (CONTINUOUS) 1 ms * 1 DC OPERATION Tc = 25C 0.1 * SINGLE NONREPETITIVE PULSE 300 200 100 0 25 VDSS max INCREASE IN TEMPERATURE. 10 400 Tc=25 CURVES MUST BE DERATED LINEARLY WITH 0.01 1 10 100 DRAIN-SOURCE VOLTAGE 1000 VDS 50 75 100 125 150 CHANNEL TEMPERATURE (INITIAL) Tch (C) 10000 (V) 15 V BVDSS IAR -15 V VDD TEST CIRCUIT RG = 25 VDD = 90 V, L = 83 mH 5 VDS WAVEFORM AS = 1 B VDSS L I2 B 2 - V VDSS DD 2013-11-01 2SK3564 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. 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Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 6 2013-11-01