6MBI150UB-120 IGBT Module U-Series 1200V / 150A 6 in one-package Features Applications * High speed switching * Voltage drive * Low inductance module structure * Uninterruptible power supply * Inverter for Motor drive * AC and DC Servo drive amplifier * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 between thermistor and others *2 Screw Torque Mounting *3 -IC -IC pulse PC Tj Tstg V iso Conditions Continuous Tc=25C Tc=80C 1ms Tc=25C Tc=80C 1 device AC:1min. Unit V V A Rating 1200 20 200 150 400 300 150 300 735 +150 -40 to +125 2500 W C VAC N*m 3.5 *1 : All terminals should be connected together when isolation test will be done. *2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. *3 :Recommendable value : 2.5 to 3.5 N*m(M5) Electrical characteristics (at Tj=25C unless otherwise specified) Item Symbols Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Thermistor Forward on voltage Reverse recovery time Lead resistance, terminal-chip*4 Resistance ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead R B value B *4:Biggest internal terminal resistance among arm. Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=150mA VGE=15V, IC=150A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC =600V IC=150A VGE=15V RG=2.2 VGE=0V IF=150A Tj=25C Tj=125C Tj=25C Tj=125C IF=150A T=25C T=100C T=25/50C Characteristics Min. Typ. - - - - 4.5 6.5 - 2.25 - 2.50 - 1.75 - 2.00 - 17 - 0.36 - 0.21 - 0.03 - 0.37 - 0.07 - 2.10 - 2.20 - 1.60 - 1.70 - - - 3.4 - 5000 465 495 3305 3375 Unit Max. 1.0 200 8.5 2.60 - 2.10 - - 1.20 0.60 - 1.00 0.30 2.40 - 1.90 - 0.35 - - 520 3450 mA nA V V nF s V s m Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*5 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.05 *5 : This is the value which is defined mounting on the additional cooling fin with thermal compound. http://store.iiic.cc/ Unit Max. 0.17 0.28 - C/W C/W C/W IGBT Module 6MBI150UB-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip Tj= 125C / chip 400 400 15V VGE=20V 12V VGE=20V 15V 12V 300 Collector current : Ic [A] Collector current : Ic [A] 300 200 10V 100 200 10V 100 8V 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [V] 1 2 Collector current vs. Collector-Emitter voltage (typ.) 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj=25C / chip 10 T j=25C 300 Collector - Emitter voltage : VCE [ V ] 400 Collector current : Ic [A] 3 Collector-Emitter voltage : VCE [V] T j=125C 200 100 8 6 4 Ic=300A Ic=150A Ic= 75A 2 0 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VGE=0V, f= 1M Hz, Tj= 25C Vcc=600V, Ic=150A, Tj= 25C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Capacitance : Cies, Coes, Cres [ nF ] 100.0 Cies 10.0 Cres 1.0 Coes VGE VCE 0 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] 0 200 400 Gate charge : Qg [ nC ] http://store.iiic.cc/ 600 800 IGBT Module 6MBI150UB-120 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=2.2, Tj= 25C Vcc=600V, VGE=15V, Rg=2.2, Tj=125C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 10 0 50 100 150 200 250 0 300 Collector current : Ic [ A ] 150 200 250 Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V, Ic=150A, VGE=15V, Tj= 25C Vcc=600V, VGE=15V, Rg=2.2 30 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 100 300 Collector current : Ic [ A ] 10000 ton toff 1000 tr 100 tf Eoff(125C) Eon(125C) 25 20 Eoff(25C) Eon(25C) 15 10 Err(125C) 5 10 Err(25C) 0 0.1 1.0 10.0 100.0 1000.0 0 Gate resistance : Rg [ ] 100 200 300 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=600V, Ic=150A, VGE=15V, Tj= 125C +VGE=15V,-VGE <= 15V, RG >= 2.2 ,Tj <= 125C 125 400 Eon 100 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 50 75 50 Eoff 25 Err 0 0.1 1.0 10.0 100.0 300 200 100 0 1000.0 Gate resistance : Rg [ ] 0 400 800 1200 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 6MBI150UB-120 IGBT Module Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip Vcc=600V, VGE=15V, Rg=2.2 400 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 350 T j=25C 300 250 T j=125C 200 150 100 trr Irr Irr trr 100 (125C) (125C) (25C) (25C) 50 10 0 0 1 2 3 0 4 Forward on voltage : VF [ V ] 200 300 Temperature characteristic (typ.) Transient thermal resistance (max.) 1.000 100 FWD IGBT Resistance : R [ k ] Thermal resistanse : Rth(j-c) [ C/W ] 100 Forward current : IF [ A ] 0.100 0.010 0.001 0.001 0.010 0.100 1.000 Pulse width : Pw [ sec ] 10 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [C ] http://store.iiic.cc/ IGBT Module 6MBI150UB-120 Outline Drawings, mm M633 ( ) shows reference dimension. Equivalent Circuit Schematic 16,17,18 30,31,32 1 2 5 6 U 27,28,29 3 4 9 10 V 24,25,26 7 8 W 21,22,23 11 12 33,34,35 13,14,15 http://store.iiic.cc/ 19 20