ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER NE85600 NE85618 NE85619 NE85630 NE85632
EIAJ1 REGISTERED NUMBER 2SC5011 2SC5006 2SC4226 2SC3355
PACKAGE OUTLINE 00 (CHIP) 18 19 30 32
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fTGain Bandwidth Product at
VCE = 10 V, IC = 20 mA GHz 7.0 6.5 6.5
VCE = 3 V, IC = 7 mA GHz 3.0 4.5 4.5
NF Noise Figure at
VCE = 10 V, IC = 7 mA, f = 1 GHz dB 1.1 1.4 1.4 1.3 1.4
VCE = 10 V, IC = 7 mA, f = 2 GHz dB 2.1 2.1 2.2 2.2
GAAssociated Gain at
VCE = 10 V, IC = 7 mA, f = 1 GHz dB 13 12.5 12 10
f = 2 GHz dB 10 7 6.5 6
|S21E|2Insertion Power Gain at
VCE = 10 V, IC = 20 mA, f = 1 GHz dB 11 13 12 12 9.5
f = 2 GHz dB 7 9 7 6
hFE Forward Current Gain2 at
VCE = 10 V, IC = 20 mA 50 120 300 50 120 300 50 120 300
VCE = 3 V, IC = 7 mA 80 120 160 40 110 250
ICBO Collector Cutoff Current
at VCB = 15 V, IE = 0 mA μA 1.0 1.0 1.0 1.0 1.0
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA μA 1.0 1.0 1.0 1.0 1.0
Cre Feedback Capacitance3 at
VCB = 3 V, IE = 0 mA, f = 1 MHz pF 0.7 1.5 0.7 1.5
VCB = 10 V, IE = 0 mA, f = 1 MHz pF 0.5 1.0 0.5 0.9 0.65 1.0
PTTotal Power Dissipation mW 700 150 100 150 600
RTH (J-A) Thermal Resistance (J-A) °C/W 833 1000 833 210
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER NE85633 NE85634 NE85635 NE85639/39R
EIAJ1 REGISTERED NUMBER 2SC3356 2SC3357 2SC3603 2SC4093
PACKAGE OUTLINE 33 34 35 39
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fTGain Bandwidth Product at
VCE = 10 V, IC = 20 mA GHz 7.0 6.5 7.0 9.0
NF Noise Figure at
VCE = 10 V, IC = 7 mA, f = 1 GHz dB 1.4 2.0 1.4 1.5 2.1
f = 2 GHz dB 2.1 3.4
GAAssociated Gain at
VCE = 10 V, IC = 7 mA, f = 1 GHz dB 9 13.5
f = 2 GHz dB 10 8.5
|S21E|2Insertion Power Gain at
VCE = 10 V, IC = 20 mA, f = 1 GHz dB 11.5 9.5 13
f = 2 GHz dB 7 9 7
hFE Forward Current Gain2 at
VCE = 10 V, IC = 20 mA 50 120 300 50 120 300 50 120 300 50 120 300
ICBO Collector Cutoff Current
at VCB = 15 V, IE = 0 mA μA 1.0 1.0 1.0 1.0
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA μA 1.0 1.0 1.0 1.0
Cre Feedback Capacitance3 at
VCB = 10 V, IE = 0 mA, f = 1 MHz pF 0.55 1.0 0.65 1.0 0.5 1.0 0.5 0.9
PTTotal Power Dissipation mW 200 20004580 200
RTH (J-A) Thermal Resistance (J to A) °C/W 625 62.54590 500
Notes:
1. Electronic Industrial Association of Japan.
2. Pulse width ≤ 350 μs, duty cycle ≤ 2% pulsed.
3. Cre measurement employs a three terminal capacitance bridge incorporating a
guard circuit. The emitter terminal shall be connected to the guard terminal.
4. With 2.5 cm2 x 0.7 mm ceramic substrate (infinite heatsink).
NE856 SERIES