1
Item Symbol Rating Unit
Drain-source voltage V DS 900
Continuous drain current ID±10
Pulsed drain current ID(puls] ±40
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 10
Maximum Avalanche Energy EAV *1 648
Max. power dissipation PD310
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3341-01 FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=900V
VGS=±30V
ID=5A VGS=10V
ID=5A VDS=25V
VCC=600V ID=10A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
mA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 0.403
50.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total gate charge
Gate-Source charge
Gete-Drain charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
Tch=25°C
VGS=0V Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
Vcc=450V
ID=10A
VGS=10V
L=11.9mH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
V
A
A
V
A
mJ
W
°C
*1 L=11.9mH, Vcc=90V *2 Tch=150°C
900
2.5 3.0 3.5
10 500
0.2 1.0
10 100
0.92 1.2
3.5 7
2200 3300
240 360
115 173
28 42
70 105
220 330
90 135
120 180
36 54
40 60
10 1.00 1.50
1.8
21.0
-55 to +150 <
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
11.6±0.2
保守移行機種
Not recommend for new design.
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2
Characteristics
2SK3341-01 FUJI POWER MOSFET
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
101102103
10-1
100
101
102
100ms
10ms
1ms
100µs
10µs
Safe operating area
ID=f(VDS):Single Pulse,Tc=25°C
t=
1µs
D.C.
ID [A]
VDS [V]
0 2 4 6 8 10 12 14 16 18 20 22 24 26
0
2
4
6
8
10
12
14
16
18
20
22
6.5V
20V
10V
7V
6.0V
5.5V
5.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80µs pulse test,Tch=25°C
VGS=4.5V
012345678
0.01
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
0.1 1 10
0.1
1
10
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
0 5 10 15 20 25
0.0
0.5
1.0
1.5
2.0
2.5
3.0
6.5V
RDS(on) [Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
10V
20V
7V
6.0V5.5V5.0V
VGS=
4.5V
t
T
D=
t
T
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3
10-1 100101
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
2SK3341-01 FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
RDS(on) [Ω ]
Tch [°C]
typ.max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
max.
typ.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS(th) [V]
Tch [°C]
0 50 100 150 200 250
0
5
10
15
20
25
Qg [C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A,Tch=25°C
VGS [V]
720V
450V
Vcc= 180V
10-2 10-1 100101102
10-11
10-10
10-9
10-8
10-7
C [F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
保守移行機種
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4
2SK3341-01 FUJI POWER MOSFET
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
800
EAV [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=90V,I(AV)<=10A
10
-5 10
-4 10
-3 10
-2 10
-1 10
010
1
10
-3
10
-2
10
-1
10
0
Transient Thermal impedance
Zth(ch-c)=f(t) parameter:D=t/T
Zth(ch-c) [K/W]
t [s]
0.5
0.2
0.02
0.05
0.1
0.01
0t
T
D=
t
T
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
