KVR1333D3E9S/8G
8GB 2Rx8 1G x 72-Bit PC3-10600
CL9 240-Pin ECC DIMM
DESCRIPTION
This document describes ValueRAM's 1G x 72-bit (8GB)
DDR3-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8, ECC
memory modules, based on eighteen 512M x 8-bit FBGA
components per module. The SPD's are programmed to
JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V.
Each 240-pin DIMM uses gold contact fingers. The electrical
and mechanical specifications are as follows:
FEATURES
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
Bi-directional Differential Data Strobe
Thermal Sensor Grade B
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB: Height 1.18” (30mm), double sided component
Document No. VALUERAM1029-001.B00 10/10/14 Page 1
Memory Module Speci cations
SPECIFICATIONS
selcyc 9)DDI(LC
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Power (Operating) 1.3 10* (per module)
0 - V 49gnitaR LU
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
*Power will vary depending on the SDRAM used.
Continued >>
Important Information: The module defined in this data sheet is one of several configurations available under
this part number. While all configurations are compatible, the DRAM combination and/or the module height may
vary from what is described here.
MODULE DIMENSIONS:
Document No. VALUERAM1028-001.B00 Page 2