DSA 30 C 100QB advanced V RRM = 100 V I FAV = 2x 15 A V F = 0.72 V Schottky High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode 1 Part number 2 3 DSA 30 C 100QB Backside: cathode Features / Advantages: Applications: Very low Vf Extremely low switching losses Low Irm-values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Package: TO-3P Industry standard outline - compatible with TO-247 Epoxy meets UL 94V-0 RoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF max. Unit TVJ = 25 C 100 V VR = 100 V TVJ = 25 C 0.3 mA VR = 100 V TVJ = 125 C 2.5 mA I F = 15 A I F = 30 A TVJ = 25 C 0.91 1.06 V V I F = 15 A I F = 30 A T VJ = 125 C 0.72 0.90 V V rectangular, d = 0.5 T C = 150 C 15 A T VJ = 175 C 0.46 11.7 V m 1.75 K/W 175 C TC = 25 C 85 W 120 A Conditions forward voltage min. I FAV average forward current VF0 rF threshold voltage slope resistance R thJC thermal resistance junction to case TVJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current t p = 10 ms (50 Hz), sine TVJ = 45 C CJ junction capacitance VR = tbd V; f = 1 MHz TVJ = EAS non-repetitive avalanche energy I AS = T VJ = 25 C I AR repetitive avalanche current VA = 1.5*VR typ.; f = 10 kHz for power loss calculation only (c) 2006 IXYS all rights reserved -55 5 A; L = 100 H 25 C Data according to IEC 60747and per diode unless otherwise specified tbd pF 1.3 mJ tbd A 0629 IXYS reserves the right to change limits, conditions and dimensi typ. DSA 30 C 100QB advanced Ratings Symbol Definition Conditions I RMS RMS current per pin* RthCH thermal resistance case to heatsink MD mounting torque FC mounting force with clip T stg storage temperature min. typ. max. Unit 50 A 0.25 Weight K/W 0.8 1.2 Nm 20 120 N -55 150 C 5 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-3P (c) 2006 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 0629 IXYS reserves the right to change limits, conditions and dimensi