2SK192A
2003-04-04
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK192A
FM Tuner Applications
VHF Band Amplifier Applications
· High power gain: GPS = 24dB (typ.) (f = 100 MHz)
· Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)
· High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Gate-drain voltage VGDO -18 V
Gate current IG 10 mA
Drain power dissipation PD 200 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = -1.0 V, VDS = 0 ¾ ¾ -10 nA
Gate-drain breakdown voltage V (BR) GDO IG = -100 mA -18 ¾ ¾ V
Drain current IDSS
(Note)
VGS = 0, VDS = 10 V 3 ¾ 24 mA
Gate-source cut-off voltage VGS (OFF) V
DS = 10 V, ID = 1 mA -1.2 -3 ¾ V
Forward transfer admittance ïYfsï V
GS = 0, VDS = 10 V, f = 1 kHz ¾ 7 ¾ mS
Input capacitance Ciss V
DS = 10 V, VGS = 0, f = 1 MHz ¾ 3.5 ¾ pF
Reverse transfer capacitance Crss V
GD = -10 V, f = 1 MHz ¾ ¾ 0.65 pF
Power gain GPS V
DD = 10 V, f = 100 MHz (Figure 1) ¾ 24 ¾ dB
Noise figure NF VDD = 10 V, f = 100 MHz (Figure 1) ¾ 1.8 3.5 dB
Note: IDSS classification Y: 3.0~7.0, GR: 6.0~14.0, BL: 12.0~24.0
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-4E1D
Weight: 0.13 g (typ.)
2SK192A
2003-04-04
2
L1: 0.8 mmf Ag plated Cu wire 3 turns, 10 mm ID, 10 mm length
L2: 0.8 mmf Ag plated Cu wire 3.5 turns, 10 mm ID, 10 mm length
Figure 1 100 MHz Gps, NF Test Circuit
2SK192A
2003-04-04
3
2SK192A
2003-04-04
4
2SK192A
2003-04-04
5
2SK192A
2003-04-04
6
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
A
RESTRICTIONS O N PRODUCT USE
