DATE NAME
DRAWN
CHECKED
APPROVED
DWG.NO.
Fuji Electric Co.,Ltd.
This material and the information herein is the property of
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lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
Date :
Fuji Electric Co.,Ltd.
Matsumoto Factory
H04-004-05
2SK3534-01MR
MS5F5138
MS5F5138
1 / 20
Power MOSFET
Dec.-26-2001
CHECKED
Dec.-26-'01
Dec.-26-'01
(PRELIMINARY)
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lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
H04-004-03
Fuji Electric Co.,Ltd. MS5F5138
2 / 20
(PRELIMINARY)
Revised Records
Date Classification
Index
Content Drawn
Checked Checked Approved
Dec.-26
2001 enactment
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lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
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(PRELIMINARY)
1.Scope This specifies Fuji Power MOSFET 2SK3534-01R
2.Construction N-Channel enhancement mode power MOSFET
3.Applications for Switching
4.Outview TO-220F Outview See to 8/20 page
5.Absolute Maximum Ratings at Tc=25°
°°
°C (unless otherwise specified)
Description Symbol Characteristics Unit Remarks
VDS 900 V
VDSX 900 V VGS=-30V
Continuous Drain Current ID±5.5 A
Pulsed Drain Current IDP ±22 A
Gate-Source Voltage VGS ±30 V
Non-repetitive Avalanche Current I
A
S5.5 A
E
A
SmJ L=20.8mH,Vcc=90V
Maximum Drain-Source dV/dt dVDS/dt kV/µs
Peak Diode Recovery dV/dt dV/dt kV/µs
Ta=25°C
60 Tc=25°C
Operating and Storage Tch 150 °C
Temperature range Tstg -55 to +150 °C
Isolation Voltage VISO kVrms
*1 IF≤-ID,-di/dt=50A/µs,Vcc≤BVDSS,Tch≤150°C
6.Electrical Characteristics at Tc=25°
°°
°C (unless otherwise specified)
Static Ratings
Description Symbol Conditions min. typ. max. Unit
Drain-Source ID=250µA
Breakdown Voltage BVDSS VGS=0V 900 - - V
Gate Threshold ID=250µA
Voltage VGS(th) VDS=VGS 3.0 - 5.0 V
Zero Gate Voltage VDS=900V
VGS=0V Tch=25°C--25
Drain Current IDSS
VDS=900V
VGS=0V Tch=125°C--250
Gate-Source VGS= ± 30V
Leakage Current IGSS VDS=0V -10100nA
Drain-Source ID=5.5A
On-State Resistance RDS(on) VGS=10V - 1.54 2.00 Ω
Drain-Source Voltage
µ A
VDS<=900V
5*1
Maximum Avalanche Energy 342
20
Maximum Power Dissipation PD
2.16
W
2t=60sec
f=60Hz
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third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
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(PRELIMINARY)
Dynamic Ratings
Description Symbol Conditions min. typ. max. Unit
Forward ID=2.75A
Transconductance gfs VDS=25V 2.5 5 - S
Input Capacitance Ciss VDS=25V - 980 1470
Output Capacitance Coss VGS=0V - 120 180
Reverse Transfer f=1MHz 6 12 pF
Capacitance Crss -
td(on) Vcc=600V -2235
Turn-On Time tr VGS=10V -919
td(off) ID=2.75A -5080ns
Turn-Off Time tf RGS=10Ω-2244
Total Gate Charge QGVcc=450V -2842
Gate-Source Charge QGS ID=5.5A - 9 13 nC
Gate-Drain Charge QGD VGS=10V -816
Reverse Diode
Description Symbol Conditions min. typ. max. Unit
Avalanche Capability L=20.8mH Tch=25°C
IAV See Fig.1 and Fig.2 5.5 - - A
Diode Forward IF=5.5A
On-Voltage VSD VGS=0V Tch=25°C-1.001.20V
Reverse Recovery IF=5.5A
Time trr VGS=0V -0.65-µs
Reverse Recovery -di/dt=100A/µ s
Charge Qrr Tch=25°C-2.5-µ C
7.Thermal Resistance
Description Symbol min. typ. max. Unit
Channel to Case Rth(ch-c) 2.08 °C/W
Channel to Ambient Rth(ch-a) 58 °C/W
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third party nor used for the manufacturing purposes without
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(PRELIMINARY)
Fig.1 Test circuit
Fig.2 Operating waveforms
50ΩD.U.T
L
Vcc
-15V
0
BVDSS
IDP
VGS
ID
VDS
+10V
L=20.8mH
Vcc=90V
VGS=+10V,-15V
RG=50 Ω
Single Pulse Test
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(PRELIMINARY)
8.Reliability test items
All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).
Each categories under the guaranteed reliability conform to EIAJ ED4701 B101A standards.
Test items required without fail : Test Method B-121,B-122,B-123,B-131,B-141
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times)
Test Test Testing methods and Conditions Reference Sampling Acceptance
No. Items Standard number number
EIAJ ED4701
1 Terminal Pull force
Strength TO-220,TO-220F : 10N
(Tensile) TO-3P,TO-3PF,TO-247 : 25N A-111A 15
TO-3PL : 45N method 1
T-Pack,K-Pack : 10N
Force maintaining duration :30±5sec
2 Terminal Load force
Strength TO-220,TO-220F : 5N
(Bending) TO-3P,TO-3PF,TO-247 : 10N A-111A 15
TO-3PL : 15N method 3
T-Pack,K-Pack : 5N
Number of times :2times(90deg./time)
3 Mounting Screwing torque value: (M3) (0:1)
Strength TO-220,TO-220F : 40±10N A-112 15
TO-3P,TO-3PF,TO-247 : 50±10N method 2
TO-3PL : 70±10N
4 Vibration frequency : 100Hz to 2kHz
Acceleration : 100m/s2A-121 15
Sweeping time : 20min./1 cycle test code C
6times for each X,Y&Z directions.
5 Shock Peak amplitude: 15km/s2A-122
Duration time : 0.5ms test code D 15
3times for each X,Y&Z directions.
6 Solderability Solder temp. : 235±5°C
Immersion time : 5±0.5sec A-131A
Each terminal shall be immersed in test code A 15
the solder bath within 1 to 1.5mm from
the body.
7 Resistance to Solder temp. : 260±5°C
Soldering Heat Immersion time : 10±1sec A-132 15
Number of times : 2times
Mechanical test methods
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third party nor used for the manufacturing purposes without
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(PRELIMINARY)
Failure Criteria
Symbols Unit
Lower Limit Upper Limit
Breakdown Voltage BVDSS LSL * 0.8 ----- V
Zero gate Voltage Drain-Source Current IDSS ----- USL * 2 A
Gate-Source Leakage Current IGSS ----- USL * 2 A
Gate Threshold Voltage VGS(th) LSL * 0.8 USL * 1.2 V
Drain-Source on-state Resistance RDS(on) ----- USL * 1.2 Ω
Forward Transconductance gfs LSL * 0.8 ----- S
Diode forward on-Voltage VSD ----- USL * 1.2 V
Marking
Soldering ----- With eyes or Microscope -----
and other damages
* LSL : Lower Specification Limit * USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
Item
Failure Criteria
Electrical
Characteristics
Outview
Test Test Testing methods and Conditions Reference Sampling Acceptance
No. Items Standard number number
EIAJ ED4701
1 High Temp. Temperature : 150+0/-5°C B-111A 22
Storage Test duration : 1000hr
2 Low Temp. Temperature : -55+5/-0°C B-112A 22
Storage Test duration : 1000hr
3 Temperature Temperature : 85±2°C B-121A
Humidity Relative humidity : 85±5% test code C 22
Storage Test duration : 1000hr
4 Temperature Temperature : 85±2°C
Humidity Relative humidity : 85±5% B-122A 22
BIAS Bias Voltage : VDS(max) * 0.8 test code C
Test duration : 1000hr
5 Unsaturated Temperature : 130±2°C (0:1)
Pressurized Relative humidity : 85±5% B-123A 22
Vapor Vapor pressure : 230kPa test code C
Test duration : 96hr
6 Temperature High temp.side : 150±5°C
Cycle Low temp.side : -55±5°CB-131A 22
Duration time : HT 30min,LT 30min test code A
Number of cycles : 100cycles
7 Thermal Shock Fluid : pure water(running water)
High temp.side : 100+0/-5°CB-141A 22
Low temp.side : 0+5/-0°Ctest code A
Duration time : HT 5min,LT 5min
Number of cycles : 100cycles
1 Intermittent Ta=25±5°C
Operating ∆Tc=90degree D-322 22
Life Tch≤Tch(max.)
Test duration : 3000 cycle
2 HTRB Temperature : 150+0/-5°C
(Gate-source) Bias Voltage : VGS(max) D-323 22 (0:1)
Test duration : 1000hr
3 HTRB Temperature : 150+0/-5°C
(Drain-Source) Bias Voltage : VDS(max) D-323 22
Test duration : 1000hr
Climatic test methodsTest for FET
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third party nor used for the manufacturing purposes without
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(PRELIMINARY)
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Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
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9 / 20
(PRELIMINARY)
9 Warning
9.1. Although Fuji Electric is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you
are requested to take adequate safety measures to prevent the equipment from causing a physical
injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design fail-safe, flame retardant, and free of malfunction.
9.2. The products introduced in this Specification are intended for use in the following electronic and
electrical equipment witch has normal reliability requirements.
• Computers OA equipments • Communications equipment (Terminal devices)
• Measurement equipments • Machine tools • AV equipments
• Electrical home appliances • Personal equipments • Industrial robots etc…
9.3. If you need to use a product in this Specification for equipment requiring higher reliability than normal,
such as for the equipment listed below, it is imperative to contact Fuji Electric to obtain prior approval.
When using these products for such equipment, take adequate measures such as a backup system to
prevent the equipment from malfunctioning even if a Fuji’s product incorporated in the equipment
becomes faulty.
• Transportation equipment (Automotives, Locomotives and ships etc…)
• Backbone network equipment • Traffic-signal control equipment
• Gas alarm, Leakage gas auto breaker
• Burglar alarm, Fire alarm, Emergency equipments etc…
9.4. Don’t use products in this Specification for the equipment requiring strict reliability such as
(without limitation)
• Aerospace equipment • Aeronautic equipment • nuclear control equipment
• Medical equipment • Submarine repeater equipment
10. General Notice
10.1. Preventing ESD Damage
Although the gate oxide of Fuji Power MOSFETs is much higher ruggedness to ESD damage than
small-Signal MOSFETs and CMOS ICs, careful handling of any MOS devices are an important
consideration.
1) When handling MOSFETs, hold them by the case (package) and don’t touch the leads and
terminals.
2) It is recommended that any handling of MOSFETs is done while used electrically conductive floor and
tablemats that are grounded.
3) Before touching a MOSFETs terminal, discharge any static electricity from your body and clothes by
grounding out through a high impedance resistor (about 1MΩ)
4) When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or
soldering bath through a low impedance resistor.
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lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
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10 / 20
(PRELIMINARY)
10.2. Short mode failure / Open mode failure
The MOSFETs may be in the risk of having short mode failure or open mode failure when the applied ove
r
voltage, over current or over temperature each specified maximum rating. It is recommended to use th
e
fail-safe equipment or circuit from such possible failures.
10.3. An Electric shock / A Skin burn
You may be in risk for an Electric shock or a Skin burn for directly touching to the leads or package of th
e
MOSFETs while turning on electricity or operating.
10.4. Smoke / Fire
Fuji MOSFETs are made of incombustibility material. However, a failure of the MOSFETs may emit
smoke or fire. Also, operating the MOSFETs near any flammable place or material may risk the
MOSFETs to emit smoke or fire due to the MOSFETs reach high temperature while operated.
10.5. Corrosion / Erosion
Avoid use or storage of the MOSFETs under the higher humidity, corrosive gases. It will lead the device
to corrode and possibly cause the device to fail.
10.6. Radiation field
Don’t use of the device under the radiation field since the device is not designed for radiation proofing.
11. Notes for Design
11.1. You must design the MOSFETs to be operated within specified maximum ratings (Voltage, Current,
Temperature etc…) which are imperative to prevent possible failure or destruction of the device.
11.2. We recommend to use the protection equipment or safety equipment such as fuse, breaker to prevent
the fire or damage in case of unexpected accident may have occurred.
11.3. You must design the MOSFETs within it’s reliability and lifetime in certain the environment or condition.
There is a risk that MOSFETs breakdown earlier than the target lifetime of the your products when
MOSFETs was used in the reliability condition excessively. Especially avoid use of the MOSFETs
under the higher humidity, corrosive gases.
11.4. We recommend to consider for the temperature rise not only for the Channel but also for the Leads if it
designed to large current operation to the MOSFETs.
11.5. We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous
Avalanche capability which can be assumed as abnormal condition. Please note the device may be
destructed from the Avalanche over the specified maximum rating.
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third party nor used for the manufacturing purposes without
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(PRELIMINARY)
12. Note on implementation
12.1. Soldering
Soldering involves temperatures witch exceed the device storage temperature rating. To avoid device
damage and to ensure reliability, the following guidelines from the quality assurance standard must be
observed.
1) Solder temperature and duration (Through-Hole Package)
Solder temperature Duration
260±5 °C 10±1 seconds
350±10 °C 3.5±0.5 seconds
2) The device should not be soldered closer than 1mm from the package. (* through-hole package)
3) When flow soldered, care must be taken to Avoid immersing the package in the solder-bath.
12.2. Please see to the following the Torque reference when mounting the device to heat sink. Excess
torque applied to the mounting screw causes damage to the device and weak torque will increase the
thermal resistance. Both of these conditions may lead the device to be destructed.
Table 1 : Recommended tightening torques.
Package style Screw Recommended tightening
torques
TO-220
TO-220F M3 30 – 50 Ncm
TO-3P
TO-3PF
TO-247
M3 40 – 60 Ncm
TO-3PL M3 60 –80 Ncm
12.3. If the heat sink with coarse finish is used, increase in thermal resistance and concentrated force to a
point may cause the MOSFETs to be destructed. We recommend in such condition to process the
surface of heat sink within ±50µm and use of thermal compound to optimize its efficiency of heat
radiation. Moreover, it is important to evenly apply the compound and eliminate any air voids. A simple
method is to apply a dot of compound of the appropriate quantity to the center of the case just below
the chip mount.
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lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
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(PRELIMINARY)
13.Notes for Storage
13.1. The MOSFETs should be stored at a standard temperature of 5 to 35 °C and humidity of 45 to
75%RH. If the storage area is very dry, a humidifier may be required. In such a case, use only
deionized water or boiled water, since the chlorine in tap water may corrode the leads.
13.2. Avoid exposure to corrosive gases and dust.
13.3. Rapid temperature changes may cause condensation on the MOSFETs surface. Therefore, store
the MOSFETs in a place with few temperature changes.
13.4. While in storage, it is important that nothing be loaded on top of the MOSFETs, since this may
cause excessive external force on the case.
13.5. Store MOSFETs with unprocessed lead terminals. Rust may cause presoldered connections to go
bad during later processing.
13.6. Use only antistatic containers or shipping bag for storing MOSFETs.
14. Additional points
If you have any question about any portion in this Specification, ask Fuji Electric or its sales agents before
using the product. Neither Fuji nor its agents shall be liable for any injury caused bay any use of the
products not in accordance with instructions set forth herein.
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lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
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13 / 20
(PRELIMINARY)
0 25 50 75 100 125 150
0
10
20
30
40
50
60
70
80
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
04812162024
0
2
4
6
8
10
12
5.5V
7V
15V
20V
10V
6.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
VGS=5.0V
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lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
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(PRELIMINARY)
012345678910
0.01
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
0.1 1 10 100
0.01
0.1
1
10
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
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third party nor used for the manufacturing purposes without
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(PRELIMINARY)
024681012
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
15V
7.0V
6.5V
6.0V
RDS(on) [
Ω
]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
10V 20V
5.5V
VGS=
5.0V
-50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
6
RDS(on) [ m
Ω
]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=2.75A,VGS=10V
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lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
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(PRELIMINARY)
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS(th) [V]
Tch [°C]
0 1020304050
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=5.5A,Tch=25°C
VGS [V]
Vcc=180V 450V 750V
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third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
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(PRELIMINARY)
10-1 100101102103
10-3
1x10-2
1x10-1
1x100
1x101
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
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third party nor used for the manufacturing purposes without
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(PRELIMINARY)
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
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lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
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(PRELIMINARY)
0 25 50 75 100 125 150
0
100
200
300
400
500
EAV [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=90V,I(AV)<=5.5A
10-8 10-7 10-6 1x10-5 1x10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=90V
Avalanche Current I
AV
[A]
tAV [sec]
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third party nor used for the manufacturing purposes without
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(PRELIMINARY)
10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
101
Transient Thermal Impedance
Zth(ch-c)=f(t):Duty=0
Zth(ch-c) [℃/W]
t [sec]
