MRF8S9120NR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 700 to
1000 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
!Typical Single--Carrier W--CDMA Performance: VDD =28Volts,I
DQ =
800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz 20.1 34.6 6.3 --37.2
940 MHz 20.0 34.3 6.3 --37.3
960 MHz 19.8 34.2 6.3 --37.4
!Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 120 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
!Typical Pout @ 1 dB Compression Point ≃120 Watts CW
880 MHz
!Typical Single--Carrier W--CDMA Performance: VDD =28Volts,I
DQ =
800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
865 MHz 20.8 35.0 6.2 --37.1
880 MHz 20.8 35.0 6.2 --37.5
895 MHz 20.6 34.8 6.2 --38.0
Features
!100% PAR Tested for Guaranteed Output Power Capability
!Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
!Internally Matched for Ease of Use
!Integrated ESD Protection
!Greater Negative Gate--Source Voltage Range for Improved Class C Operation
!Designed for Digital Predistortion Error Correction Systems
!Optimized for Doherty Applications
!225#C Capable Plastic Package
!RoHS Compliant
!In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +70 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 #C
Case Operating Temperature TC150 #C
Operating Junction Temperature (1,2) TJ225 #C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF8S9120N
Rev. 0, 9/2010
Freescale Semiconductor
Technical Data
865--960 MHz, 33 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 2021--03, STYLE 1
O M -- 7 8 0 -- 2
PLASTIC
MRF8S9120NR3
$Freescale Semiconductor, Inc., 2010.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8S9120NR3
Table 2. Thermal Characteristics
Characteristic Symbol Value (1,2) Unit
Thermal Resistance, Junction to Case
Case Temperature 76#C, 33 W CW, 28 Vdc, IDQ = 800 mA, 960 MHz
Case Temperature 76#C, 120 W CW, 28 Vdc, IDQ = 800 mA, 960 MHz
R%JC
0.62
0.51
#C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 #C
Table 5. Electrical Characteristics (TA=25#C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =70Vdc,V
GS =0Vdc)
IDSS — — 10 &Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 &Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 &Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 460 &Adc)
VGS(th) 1.4 2.2 2.9 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
D= 800 mAdc, Measured in Functional Test)
VGS(Q) 2.3 3.1 3.8 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2Adc)
VDS(on) 0.1 0.2 0.3 Vdc
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 800 mA, Pout = 33 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Power Gain Gps 19.0 19.8 22.0 dB
Drain Efficiency "D33.0 34.2 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.0 6.3 —dB
Adjacent Channel Power Ratio ACPR —--37.4 --36.4 dBc
Input Return Loss IRL — -- 2 0 -- 1 2 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 800 mA, Pout =33WAvg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz 20.1 34.6 6.3 --37.2 -- 1 4
940 MHz 20.0 34.3 6.3 --37.3 -- 2 4
960 MHz 19.8 34.2 6.3 --37.4 -- 2 0
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Part internally matched both on input and output.
(continued)
MRF8S9120NR3
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA=25#C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 800 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —120 — W
IMD Symmetry @ 52 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—16 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —46 —MHz
Gain Flatness in 40 MHz Bandwidth @ Pout =33WAvg. GF—0.3 —dB
Gain Variation over Temperature
(--30#Cto+85#C)
(G — 0.016 —dB/#C
Output Power Variation over Temperature
(--30#Cto+85#C)
(P1dB —0.002 —dB/#C
Typical Broadband Performance — 880 MHz (In Freescale 880 MHz Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 800 mA,
Pout = 33 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ '5MHzOffset.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
865 MHz 20.8 35.0 6.2 --37.1 -- 1 2
880 MHz 20.8 35.0 6.2 --37.5 -- 1 3
895 MHz 20.6 34.8 6.2 --38.0 -- 1 3
4
RF Device Data
Freescale Semiconductor
MRF8S9120NR3
Figure 1. MRF8S9120NR3 Test Circuit Component Layout
CUT OUT AREA
MRF8S9120N
Rev. 1
R1
C22
C21
C20
C4 R2
C1 C2
C3
C5
C14 C17 C18
C7 C9
C6 C8
C12
C11
C10
C13 C15 C16
C19
Table 6. MRF8S9120NR3 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1,C11,C20 39 pF Chip Capacitors ATC100B390JT500XT ATC
C2 1.8 pF Chip Capacitor ATC100B1R8BT500XT ATC
C3 2.0 pF Chip Capacitor ATC100B2R0BT500XT ATC
C4, C10 2.7 pF Chip Capacitors ATC100B2R7BT500XT ATC
C5 6.8 pF Chip Capacitor ATC100B6R8CT500XT ATC
C6, C7 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC
C8, C9 2.2 pF Chip Capacitors ATC100B2R2JT500XT ATC
C12 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC
C13, C14 43 pF Chip Capacitors ATC100B430JT500XT ATC
C15, C16, C17, C18, C21 10 &F Chip Capacitors GRM55DR61H106KA88L Murata
C19 470 &F, 63 V Chip Capacitor MCGPR63V477M13X26--RH Multicomp
C22 47 &F, 50 V Chip Capacitor 476KXM050M Illinois Capacitor
R1 3.3 ), 1/4 W Chip Resistor P3.3VCT--ND Panasonic
R2 10 ), 1/4 W Chip Resistor CRCW120610R0JNEA Vishay
PCB 0.030*,+r=3.5 RF--35A2 Taconic
MRF8S9120NR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 33 Watts Avg.
-- 5
-- 1 5
18.4
20.4
-- 3 9
37.5
36.5
35.5
-- 3 5
"D, DRAIN
EFFICIENCY (%)
"D
Gps, POWER GAIN (dB)
20.2
20
19.6
840 860 880 900 920 940 960 980
-- 3 4
-- 2 5
PARC
PARC (dB)
-- 1 . 8
-- 1
-- 2
ACPR (dBc)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 2 0
-- 3 0
-- 5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--U
IM3--L
IM5--U
IM5--L
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
20 30 70
0
60
50
40
30
20
10
"D,DRAIN EFFICIENCY (%)
-- 1 d B = 3 0 W "D
ACPR (dBc)
-- 4 5
-- 1 5
-- 2 0
-- 2 5
-- 3 5
-- 3 0
-- 4 0
21
Gps, POWER GAIN (dB)
20.5
19.5
18.5
VDD =28Vdc,I
DQ = 800 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
-- 2 d B = 4 3 W
-- 3 d B = 6 0 W
0
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
40 50
ACPR
-- 1 0
60
Gps
PARC
18.6
18.8
19
19.2
19.4
19.8 34.5
33.5
-- 3 6
-- 3 7
-- 3 8
-- 1 0
-- 2 0
-- 1 . 6
-- 1 . 4
-- 1 . 2
VDD =28Vdc,P
out =33W(Avg.),I
DQ = 800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
20
19
18
VDD =28Vdc,P
out = 52 W (PEP), IDQ = 800 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 940 MHz
IM7--L
IM7--U
6
RF Device Data
Freescale Semiconductor
MRF8S9120NR3
TYPICAL CHARACTERISTICS
1
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
12
24
0
60
50
40
30
20
"D, DRAIN EFFICIENCY (%)
"D
Gps, POWER GAIN (dB)
10 100 150
10
-- 6 0
ACPR (dBc)
22
20
0
-- 2 0
Figure 6. Broadband Frequency Response
0
24
500
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ = 800 mA
12
8
600
GAIN (dB)
20 Gain
700 800 900 1100 1300
IRL
-- 3 0
30
20
10
0
-- 1 0
IRL (dB)
-- 2 0
18
16
14 -- 5 0
-- 4 0
-- 3 0
920 MHz
4
16
Gps
960 MHz
1200
940 MHz
920 MHz
940 MHz
960 MHz
VDD =28Vdc,I
DQ = 800 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
1000
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
13579
MRF8S9120NR3
7
RF Device Data
Freescale Semiconductor
VDD =28Vdc,I
DQ = 800 mA, Pout =33WAvg.
f
MHz
Zsource
)
Zload
)
820 2.75 -- j0.48 3.19 + j0.87
840 2.67 -- j0.21 2.95 + j1.16
860 2.61 -- j0.06 2.73 + j1.45
880 2.56 + j0.32 2.54 + j1.74
900 2.51 + j0.56 2.36 + j2.01
920 2.48 + j0.80 2.19 + j2.29
940 2.43 + j1.03 2.03 + j2.57
960 2.39 + j1.24 1.89 + j2.85
980 2.36 + j1.46 1.77 + j3.12
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 9. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
8
RF Device Data
Freescale Semiconductor
MRF8S9120NR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
36
Pin, INPUT POWER (dBm)
VDD =28Vdc,I
DQ = 800 mA, Pulsed CW, 10 &sec(on), 10% Duty Cycle
56
54
52
37
57
55
49
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
53
58
35343329 403231
59
51
50
30 38 39
Ideal
Actual
960 MHz
940 MHz
960 MHz
920 MHz
48
940 MHz
920 MHz
f
(MHz)
P1dB P3dB
Watts dBm Watts dBm
920 168 52.3 202 53.1
940 160 52.0 195 52.9
960 154 51.9 188 52.7
Test Impedances per Compression Level
f
(MHz)
Zsource
)
Zload
)
920 P1dB 1.45 -- j2.02 1.28 -- j2.39
940 P1dB 1.78 -- j1.81 1.35 -- j2.74
960 P1dB 1.78 -- j2.35 1.33 -- j2.99
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S9120NR3
9
RF Device Data
Freescale Semiconductor
Figure 11. MRF8S9120NR3 Test Circuit Component Layout — 880 MHz
CUT OUT AREA
MRF8S9120N
Rev. 1
R1
C22
C21
C20
C4 R2
C1
C2 C3
C5
C7 C9
C6 C8 C11
C10
C13 C15 C16
C19
C17 C18
C14
C12
Table 7. MRF8S9120NR3 Test Circuit Component Designations and Values — 880 MHz
Part Description Part Number Manufacturer
C1,C11,C20 47 pF Chip Capacitors ATC100B470JT500XT ATC
C2, C3, C4 3.3 pF Chip Capacitors ATC100B3R3BT500XT ATC
C5, C6, C7 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC
C8, C9 2.2 pF Chip Capacitors ATC100B2R2JT500XT ATC
C10 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC
C12 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC
C13, C14 43 pF Chip Capacitors ATC100B430JT500XT ATC
C15, C16, C17, C18, C21 10 &F Chip Capacitors GRM55DR61H106KA88L Murata
C19 470 &F, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp
C22 47 &F, 50 V Electrolytic Capacitor 476KXM050M Illinois Capacitor
R1 3.3 ), 1/4 W Chip Resistor P3.3VCT--ND Panasonic
R2 10 ), 1/4 W Chip Resistor CRCW120610R0JNEA Vishay
PCB 0.030*,+r=3.5 RF-35A2 Taconic
10
RF Device Data
Freescale Semiconductor
MRF8S9120NR3
TYPICAL CHARACTERISTICS — 880 MHZ
IRL, INPUT RETURN LOSS (dB)
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 12. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 33 Watts Avg.
-- 7 . 1
--10.1
19
21
--38.5
36
35.5
35
--36.1
"D, DRAIN
EFFICIENCY (%)
"D
Gps, POWER GAIN (dB)
20.8
20.6
20.2
840 860 880 900 920 940 960 980
--35.5
--13.1
PARC (dB)
-- 1 . 8
-- 1
-- 2
ACPR (dBc)
-- 5 . 6
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
19.2
19.4
19.6
19.8
20
20.4 34.5
34
--36.7
--37.3
--37.9
-- 8 . 6
-- 11 . 6
-- 1 . 6
-- 1 . 4
-- 1 . 2
1
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 13. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 2 7
16
22
3
63
53
43
33
23
"D, DRAIN EFFICIENCY (%)
"D
Gps, POWER GAIN (dB)
10 300
13
-- 6 2
ACPR (dBc)
21
20
-- 2 0
-- 3 4
19
18
17 -- 5 5
-- 4 8
-- 4 1
865 MHz
Gps
895 MHz
880 MHz
Figure 14. Broadband Frequency Response
0
24
580
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ = 800 mA
12
8
665
GAIN (dB)
20
Gain
750 835 920 1090 1260
IRL
-- 3 0
30
20
10
0
-- 1 0
IRL (dB)
-- 2 0
4
16
11751005
PARC
VDD =28Vdc,P
out =33W(Avg.),I
DQ = 800 mA
Single--Carrier W--CDMA
100
865 MHz
880 MHz
895 MHz
VDD =28Vdc,I
DQ = 800 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
MRF8S9120NR3
11
RF Device Data
Freescale Semiconductor
VDD =28Vdc,I
DQ = 800 mA, Pout =33WAvg.
f
MHz
Zsource
)
Zload
)
820 2.25 + j0.89 2.83 + j1.30
840 2.28 + j1.18 2.67 + j1.58
860 2.33 + j1.45 2.52 + j1.87
880 2.39 + j1.72 2.38 + j1.15
900 2.45 + j1.95 2.24 + j2.41
920 2.53 + j2.18 2.12 + j2.68
940 2.60 + j2.38 1.99 + j2.96
960 2.68 + j2.55 1.86 + j3.24
980 2.77 + j2.71 1.75 + j3.53
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 15. Series Equivalent Source and Load Impedance — 880 MHz
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
12
RF Device Data
Freescale Semiconductor
MRF8S9120NR3
PACKAGE DIMENSIONS
MRF8S9120NR3
13
RF Device Data
Freescale Semiconductor
14
RF Device Data
Freescale Semiconductor
MRF8S9120NR3
MRF8S9120NR3
15
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
!AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
!AN1955: Thermal Measurement Methodology of RF Power Amplifiers
!AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
!EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
!Electromigration MTTF Calculator
!RF High Power Model
!.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Sept. 2010 !Initial Release of Data Sheet
16
RF Device Data
Freescale Semiconductor
MRF8S9120NR3
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Document Number: MRF8S9120N
Rev. 0, 9/2010
