Document Number: 94171 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 28-Apr-08 1
Schottky Rectifier, 240 A
243NQ100PbF
Vishay High Power Products
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION
The 243NQ.. high current Schottky rectifier module series
has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
PRODUCT SUMMARY
IF(AV) 240 A
VR100 V
HALF-PAK (D-67)
Lug terminal
anode
Base
cathode
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 240 A
VRRM 100 V
IFSM tp = 5 µs sine 25 500 A
VF240 Apk, TJ = 125 °C 0.72 V
TJRange - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 243NQ100PbF UNITS
Maximum DC reverse voltage VR100 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 132 °C, rectangular waveform 240
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated
load condition and with
rated VRRM applied
25 500
10 ms sine or 6 ms rect. pulse 3300
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 5.5 A, L = 1 mH 15 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1A
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2Revision: 28-Apr-08
243NQ100PbF
Vishay High Power Products Schottky Rectifier, 240 A
Note
(1) Pulse width = 500 µs
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
240 A TJ = 25 °C 0.95
V
480 A 1.26
240 A TJ = 125 °C 0.72
480 A 0.85
Maximum reverse leakage current
See fig. 2 IRM
TJ = 25 °C VR = Rated VR
6mA
TJ = 125 °C 80
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 5500 pF
Typical series inductance LSFrom top of terminal hole to mounting plane 5.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range TJ, TStg - 55 to 175 °C
Maximum thermal resistance,
junction to case RthJC
DC operation
See fig. 4 0.19
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.05
Approximate weight 30 g
1.06 oz.
Mounting torque minimum
Non-lubricated threads
3 (26.5)
N ⋅ m
(lbf ⋅ in)
maximum 4 (35.4)
Terminal torque minimum 3.4 (30)
maximum 5 (44.2)
Case style HALF-PAK module
Document Number: 94171 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 28-Apr-08 3
243NQ100PbF
Schottky Rectifier, 240 A Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
100
IF - Instantaneous Forward
Current (A)
VFM - Forward Voltage Drop (V)
0.2 0.6 1.0 1.41.20.80.40
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1000
IR - Reverse Current (mA)
VR - Reverse Voltage (V)
02040
60 100
0.001
0.1
1
10
100
80
0.01
1000
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
CT - Junction Capacitance (pF)
VR - Reverse Voltage (V)
0 406080100
1000
10 000
20
Typical
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
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4Revision: 28-Apr-08
243NQ100PbF
Vishay High Power Products Schottky Rectifier, 240 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
0 250 300150
100
120
140
160
180
50 200
DC
Square wave (D = 0.50)
80 % rated VR applied
See note (1)
100 0
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
0100 200 350
50
100
150
200
50 300
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
150 150
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100
1000
10 100 1000 10 000
10 000
100 000
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
Document Number: 94171 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 28-Apr-08 5
243NQ100PbF
Schottky Rectifier, 240 A Vishay High Power Products
ORDERING INFORMATION TABLE
1- Average current rating (x 10)
2- Product silicon identification
3- N = Not isolated
4- Q = Schottky rectifier diode
5- Voltage rating (100 = 100 V)
6- Lead (Pb)-free
Device code
51324
6
24 3 N Q 100 PbF
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95020
Document Number: 95020 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 20-May-09 1
D-67 HALF-PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
30 ± 0.05
(1.2 ± 0.002)
5 (0.20)
4 (0.16)
13 (0.51)
24.4 (0.96)
5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039)
17.5 (0.69)
16.5 (0.65)
Ø 4.3 - 0.1
0.0
(Ø 0.169 )
- 0.004
0.000
¼" - 20 UNC
40 MAX. (1.58)
21 (0.82)
20 (0.78)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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