TSM2N7000
60V N-Channel MOSFET
1/4 Version: A07
SOT-92
Features
● Fast Switching Speed
● Low Input and Output Leakage
Application
● Direct Logic-Level Interface: TTL/CMOS
● Solid-State Relays
Ordering Information
Part No.
Package
Packing
TSM2N7000CT B0
TO-92
1Kpcs / Bulk
TSM2N7000CT A3
TO-92
2Kpcs / Ammo
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
200
mA
Pulsed Drain Current
IDM
500
mA
Continuous Source Current (Diode Conduction)a,b
IS
500
mA
Ta = 25oC
350
Maximum Power Dissipation
Ta = 75oC
PD
280
mW
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
oC
Thermal Performance
Parameter
Symbol
Limit
Unit
Lead Temperature (1/8” from case)
TL
10
S
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
357
oC/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
ID (mA)
60
5 @ VGS = 10V
500
Block Diagram
N-Channel MOSFET
Pin Definition:
1. Gate
2. Source
3. Drain
TSM2N7000
60V N-Channel MOSFET
2/4 Version: A07
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 10µA
BVDSS
60
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 1mA
VGS(TH)
0.8
--
3.0
V
Gate Body Leakage
VGS = ±15V, VDS = 0V
IGSS
--
--
±10
nA
Zero Gate Voltage Drain Current
VDS = 48V, VGS = 0V
IDSS
--
--
1.0
µA
VGS = 10V, ID = 500mA
--
--
5.0
Drain-Source On-State Resistance
VGS = 5V, ID = 50mA
RDS(ON)
--
7.5
--
Ω
Forward Transconductance
VDS = 15V, ID = 300mA
gfs
--
320
--
mS
Diode Forward Voltage
IS = 200mA, VGS = 0V
VSD
--
1.3
1.5
V
Dynamicb
Input Capacitance
Ciss
--
60
--
Output Capacitance
Coss
--
25
--
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Crss
--
5
--
pF
Switchingc
Turn-On Rise Time
tr
--
10
--
Turn-Off Fall Time
VDD = 15V, RL = 30Ω,
ID = 500mA,
VGEN = 10V, RG = 25Ω
tf
--
10
--
nS
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
TSM2N7000
60V N-Channel MOSFET
3/4 Version: A07
TO-92 Mechanical Drawing
TO-92 DIMENSION
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
A
4.30
4.70
0.169
0.185
B
4.30
4.70
0.169
0.185
C
14.30(typ)
0.563(typ)
D
0.43
0.49
0.017
0.019
E
2.19
2.81
0.086
0.111
F
3.30
3.70
0.130
0.146
G
2.42
2.66
0.095
0.105
H
0.37
0.43
0.015
0.017
TSM2N7000
60V N-Channel MOSFET
4/4 Version: A07
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
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or infringement of any patent, copyright, or other intellectual property right.
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