BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com Vishay Semiconductors
Rev. 2.1, 04-Aug-14 1Document Number: 81531
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
BPW85 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1 plastic package. It is sensitive to
visible and near infrared radiation.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 25°
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Detector in electronic control and drive circuits
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
20815
PRODUCT SUMMARY
COMPONENT Ica (mA) ϕ (deg) λ0.1 (nm)
BPW85 0.8 to 8 ± 25 450 to 1080
BPW85A 0.8 to 2.5 ± 25 450 to 1080
BPW85B 1.5 to 4 ± 25 450 to 1080
BPW85C 3 to 8 ± 25 450 to 1080
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW85 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
BPW85A Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
BPW85B Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
BPW85C Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 5V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Tamb ≤ 55 °C PV100 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +100 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature t ≤ 3 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire Ø 0.14 mm2 RthJA 450 K/W
BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com Vishay Semiconductors
Rev. 2.1, 04-Aug-14 2Document Number: 81531
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
020406080
0
25
50
75
100
125
PV - Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
100
94 8308
RthJA = 450 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage IC = 1 mA V(BR)CEO 70 V
Collector emitter dark current VCE = 20 V, E = 0 ICEO 1 200 nA
Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 3pF
Angle of half sensitivity ϕ± 25 deg
Wavelength of peak sensitivity λp850 nm
Range of spectral bandwidth λ0.1 450 to 1080 nm
Collector emitter saturation voltage Ee = 1 mW/cm2, λ = 950 nm,
IC = 0.1 mA VCEsat 0.3 V
Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ωton 2.0 μs
Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ωtoff 2.3 μs
Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ωfc180 kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Collector light current Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
BPW85 Ica 0.8 8.0 mA
BPW85A Ica 0.8 2.5 mA
BPW85B Ica 1.5 4.0 mA
BPW85C Ica 3.0 8.0 mA
BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com Vishay Semiconductors
Rev. 2.1, 04-Aug-14 3Document Number: 81531
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Fig. 3 - Relative Collector Current vs. Ambient Temperature
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 6 - Collector Light Current vs. Collector Emitter Voltage
Fig. 7 - Collector Light Current vs. Collector Emitter Voltage
20 100
40 60 80
10
10
1
10
2
10
3
10
4
V
CE
= 20 V
T
amb
- Ambient Temperature (°C)
I
CEO
- Collector Dark Current (nA)
94 8304
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80 100
1.6
1.8
λ
94 8239 Tamb - Ambient Temperature (°C)
Ica rel - Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm2
= 950 nm
0.01 0.1 1
0.01
0.1
1
10
I
ca
- Collector Light Current (mA)
E
e
- Irradiance (mW/cm2)
10
94 8271
BPW85C
BPW85B
V
CE
= 5 V
λ = 950 nm
BPW85A
0.5 mW/cm
2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
0.1 1 10
0.01
0.1
1
10
100
94 8275
BPW 85 A
λ= 950 nm Ee= 1 mW/cm2
VCE - Collector Emitter Voltage (V)
Ica - Collector Light Current (mA)
0.1 1 10
0.01
0.1
1
10
100
94 8276
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
λ
= 950 nm
BPW 85 B E
e
= 1 mW/cm
2
V
CE
- Collector Emitter Voltage (V)
I
ca
- Collector Light Current (mA)
0.1 1 10
0.01
0.1
1
10
VCE - Collector Emitter Voltage (V)
100
94 8277
Ee= 1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
BPW 85 C
λ= 950 nm
Ica - Collector Light Current (mA)
BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com Vishay Semiconductors
Rev. 2.1, 04-Aug-14 4Document Number: 81531
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 8 - Collector Emitter Capacitance vs.
Collector Emitter Voltage
Fig. 9 - Turn-on/Turn-off Time vs. Collector Current
Fig. 10 - Relative Spectral Sensitivity vs. Wavelength
Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement
0.1 101
0
2
4
6
8
10
100
f = 1 MHz
CCEO - Collector Emitter Capacitance (pF)
VCE - Collector Emitter Voltage (V)
94 8294
0
0 2 4 6 8 10 12 14
2
8
6
4
V
CE
= 5 V
R
L
= 100 Ω
λ = 950 nm
t
off
t
on
I
C
- Collector Current (mA)
t
on
/t
off
- Turn-on/Turn-off Time (µs)
94 8293
400 600 1000
0
0.2
0.4
0.6
0.8
1.0
S (λ)
rel
- Relative Spectral Sensitivity
λ - Wavelength (nm)
94 8348
800
0.4 0.2 0
94 8295
0.6
0.9
0.8
0°
30°
10° 20°
0.7
1.0
40°
50°
70°
60°
80°
S
rel
- Relative Radiant Sensitivity
ϕ - Angular Displacement
BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com Vishay Semiconductors
Rev. 2.1, 04-Aug-14 5Document Number: 81531
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
technical drawings
according to DIN
specications
E
0.4 ± 0.05
AREA NOT PLANE
< 0.6
Ø 3 ± 0.1
7 ± 0.3
34.4 ± 0.5
2.54 nom.
Drawing-No.: 6.544-5054.01-4
Issue: 5; 28.07.14
R1.45 (phere)
(2.5)
Ø 3.2 ± 0.15
1.05 ± 0.1
3.4 ± 0.1
4.4 ± 0.1
1.5 ± 0:5
C
0.5
+ 0.2
- 0.1
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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