CGHV40100F-TB - Cree, Inc. - Product.Network

Subject to change without notice.

www.cree.com/rf

CGHV40100

100 W, DC - 4.0 GHz, 50 V, GaN HEMT

Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CGHV40100, operating from a 50 volt

rail, offers a general purpose, broadband solution to a variety of RF and

microwave applications. GaN HEMTs offer high efciency, high gain and

wide bandwidth capabilities making the CGHV40100 ideal for linear and

compressed amplier circuits. The transistor is available in a 2-lead ange

and pill package.

Rev 3.1 -September 2015

Package Types: 440193 & 440206

PN: CGHV40100F & CGHV40100P

Features

• Up to 4 GHz Operation

• 100 W Typical Output Power

• 17.5 dB Small Signal Gain at 2.0 GHz

• Application Circuit for 0.5 - 2.5 GHz

• 55 % Efciency at PSAT

• 50 V Operation

Typical Performance Over 500 MHz - 2.5 GHz (TC = 25˚C), 50 V

Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units

Small Signal Gain 17.6 16.9 17.7 17.5 14.8 dB

Saturated Output Power 147 100 141 116 112 W

Drain Efciency @ PSAT 68 56 58 54 54 %

Input Return Loss 65.1 10.5 5.5 8.8 dB

Note:

Measured CW in the CGHV40100F-AMP application circuit.

2CGHV40100 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter Symbol Rating Units Conditions

Drain-Source Voltage VDSS 125 Volts 25˚C

Gate-to-Source Voltage VGS -10, +2 Volts 25˚C

Storage Temperature TSTG -65, +150 ˚C

Operating Junction Temperature TJ225 ˚C

Maximum Forward Gate Current IGMAX 20.8 mA 25˚C

Maximum Drain Current1IDMAX 8.7 A 25˚C

Soldering Temperature2TS245 ˚C

Screw Torque τ40 in-oz

Thermal Resistance, Junction to Case3RθJC 1.62 ˚C/W 85˚C

Thermal Resistance, Junction to Case4RθJC 1.72 ˚C/W 85˚C

Case Operating Temperature5TC-40, +150 ˚C 30 seconds

Note:

1 Current limit for long term, reliable operation

2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library

3 Measured for the CGHV40100P at PDISS = 83 W.

4 Measured for the CGHV40100F at PDISS = 83 W.

5 See also, Power Derating Curve on Page 5.

Electrical Characteristics (TC = 25˚C)

Characteristics Symbol Min. Typ. Max. Units Conditions

DC Characteristics1

Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 20.8 mA

Gate Quiescent Voltage VGS(Q) –-2.7 – VDC VDS = 50 V, ID = 0.6 A

Saturated Drain Current2IDS 15.6 18.7 – A VDS = 6.0 V, VGS = 2.0 V

Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 20.8 mA

RF Characteristics3 (TC = 25˚C, F0 = 2.0 GHz unless otherwise noted)

Small Signal Gain GSS – 17.5 – dB VDD = 50 V, IDQ = 0.6 A

Power Gain GP– 11.0 – dB VDD = 50 V, IDQ = 0.6 A, POUT = PSAT

Power Output at Saturation4PSAT –116 – W VDD = 50 V, IDQ = 0.6 A

Drain Efciency η– 54 – % VDD = 50 V, IDQ = 0.6 A, POUT = PSAT

Output Mismatch Stress VSWR – – 10 : 1 YNo damage at all phase angles,

VDD = 50 V, IDQ = 0.6 A, POUT = 100 W CW

Dynamic Characteristics5

Input Capacitance CGS –29.3 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz

Output Capacitance CDS – 7.3 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz

Feedback Capacitance CGD –0.61 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz

Notes:

1 Measured on wafer prior to packaging.

2 Scaled from PCM data.

3 Measured in CGHV40100-AMP

4 PSAT is dened as IG = 0.208 mA.

5 Includes package

3CGHV40100 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

CGHV40100 Typical Performance

Figure 1. - Small Signal Gain and Return Losses versus Frequency measured in

application circuit CGHV40100-AMP

VDD = 50 V, IDQ = 600 mA, Tcase = 25°C

Figure 2. - Output Power and Drain Efciency vs Frequency

VDD = 50 V, IDQ = 600 mA

Gain (dB)

Pout (dBm), Drain Efficiency (%)

CGHV40100F in Applications Circuit

Vdd = 50 V, Idq = 600 mA, Tcase = 25°C

CW @ Psat

Output Power

Drain Efficiency

Gain

0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75

Pout (dBm), Drain Efficiency (%)

Frequency (GHz)

Drain Efciency

Output Power

Gain

Gain, Return Loss (dB)

Small Signal S-parameters

CGHV40100F in Applications Circuit

Vdd = 50 V, Idq = 600 mA, Tcase = 25°C

S11

S21

S22

-16

-12

-8

-4

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Gain, Return Loss (dB)

Frequency (GHz)

4CGHV40100 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

CGHV40100 Typical Performance

Figure 3. - Third Order Intermodulation Distortion vs Average Output Power

measured in Broadband Amplier Circuit CGHV40100-AMP

Spacing = 1 MHz, VDD = 50 V, IDQ = 600 mA, Tcase = 25°C

Figure 4. - Third Order Intermodulation Distortion vs Frequency

measured in Broadband Amplier Circuit CGHV40100-AMP

Spacing = 1 MHz, VDD = 50 V, IDQ = 600 mA, Tcase = 25°C

-25

-20

-15

-10

-5

IMD3 (dBc)

CGHV40100F in Applications Circuit

Vdd = 50 V, Idq = 600 mA, Tcase = 25°C

1 MHz Two Tone Spacing

0.5 GHz

1.5 GHz

2.5 GHz

-60

-55

-50

-45

-40

-35

27 29 31 33 35 37 39 41 43 45 47

Average Output Power (dBm)

-25

-20

-15

-10

-5

IMD3 (dBc)

CGHV40100F in Applications Circuit

Vdd = 50 V, Idq = 600 mA, Tcase = 25°C

1 MHz Two Tone Spacing @ 10W Average Pout

-60

-55

-50

-45

-40

-35

0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75

Frequency (GHz)

5CGHV40100 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

CGHV40100 Typical Performance

Figure 5. - GMAX and K-Factor vs Frequency

VDD = 50 V, IDQ = 600 mA, Tcase = 25°C

CGHV40100 Power Dissipation De-rating Curve

Figure 6. - Transient Power Dissipation De-Rating Curve

Note 1. Area exceeds Maximum Case Temperature (See Page 2).

0.5

0.75

1.25

K-Factor

MAX

(dB)

Maximum Avaliable Gain & K-Factor

CGHV40100

Vdd = 50 V, Idq = 600 mA, Tcase = 25°C

Gmax

K-Factor

0.25

0.5

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Frequency (GHz)

Power Dissipation (W)

CGHV40100 Power Dissipation De-Rating Curve

0 25 50 75 100 125 150 175 200 225 250

Power Dissipation (W)

Maximum Case Temperature (°C)

Flange - CW

Pill - CW

6CGHV40100 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Source and Load Impedances

Frequency (MHz) Z Source Z Load

500 0.43 + j5.25 8.83 + j0.85

750 0.40 + j2.62 10.78 + j2.50

1000 0.30 + j1.31 9.06 + 4.23

1250 0.30 + j0.44 7.40 + j3.85

1500 0.30 - j0.44 6.39 + j3.44

1750 0.25 - j0.87 4.41 + j3.03

2000 0.25 - j1.31 3.68 + j2.17

2250 0.25 - j2.18 3.42 + j2.17

2500 0.26 - j2.62 2.65 + j1.74

Note 1. VDD = 50 V, IDQ = 600 mA in the 440193 package.

Note 2. Optimized for power gain, PSAT and PAE.

Electrostatic Discharge (ESD) Classications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C

Z Source Z Load

7CGHV40100 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

CGHV40100-AMP Application Circuit Schematic

CGHV40100-AMP Application Circuit

8CGHV40100 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

CGHV40100-AMP Application Circuit Bill of Materials

Designator Description Qty

C1, C13, C15 CAP, 39 pF, ± 0.1 pF, 250V, 0805, ATC600F 3

C2 CAP, 7.5 pF, ± 0.1 pF, 250 V, 0806, ATC600F 1

C3 CAP, 3 pF ± 0.1 pF, 250 V, 0805, ATC600F 1

C4, C5 CAP, 1.5 pF, ± 0.1 pF, 250 V, 0805, ATC600F 2

C7 CAP, 33000 pF, 0805 100V, X7R 1

C6, C14 CAP, 240 pF, ± 0.5 pF, 250 V, 0805, ATC600F 2

C8 CAP, 10 UF, 16V TANTALUM, 2312 1

C9, C10 CAP, 1 pF, ± 0.1 pF, 250 V, 0805, ATC600F 2

C11, C12 CAP, 0.5 pF, ± 0.1 pF, 250 V, 0805, ATC600F 2

C16 CAP, 100 UF, 20%, 160 V, ELEC 1

R1 RES, 24 OHMS, IMS ND3-1005CS24R0G 1

R2 RED, 100 OHMS, IMS ND3-0805EW1000G 1

R3 RES, 3.9 OHMS, 0805 1

J1, J2 CONN, SMA, PANEL MOUNT JACK 2

J3 HEADER RT>PLZ .1CEN LK 9POS 1

BASEPLATE, CGH35120 1

PCB, RO4350B, 2.5” X 4” X 0.020”, CGHV40100F 1

CGHV40100-AMP Demonstration Amplier Circuit

9CGHV40100 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Product Dimensions CGHV40100F (Package Type — 440193)

Product Dimensions CGHV40100P (Package Type — 440206)

10 CGHV40100 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Part Number System

Parameter Value Units

Upper Frequency14.0 GHz

Power Output 100 W

Package Flange -

Table 1.

Note1: Alpha characters used in frequency code

indicate a value greater than 9.9 GHz. See Table

2 for value.

Character Code Code Value

A 0

B 1

D 3

E 4

F 5

H 7

J 8

K 9

Examples: 1A = 10.0 GHz

2H = 27.0 GHz

Table 2.

Package

Power Output (W)

Upper Frequency (GHz)

Cree GaN High Voltage

CGHV40100F

11 CGHV40100 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Product Ordering Information

Order Number Description Unit of Measure Image

CGHV40100F GaN HEMT Each

CGHV40100P GaN HEMT Each

CGHV40100-TB Test board without GaN HEMT Each

CGHV40100F-AMP Test board with GaN HEMT (anged)

installed Each

CGHV40100P-AMP Test board with GaN HEMT(pill) installed Each Photo TBD

12 CGHV40100 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Disclaimer

Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate

and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may

result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,

representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average

values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different

applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts

for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or

death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.

For more information, please contact:

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

www.cree.com/RF

Sarah Miller

Marketing

Cree, RF Components

1.919.407.5302

Ryan Baker

Marketing & Sales

Cree, RF Components

1.919.407.7816

Tom Dekker

Sales Director

Cree, RF Components

1.919.407.5639

Mouser Electronics

Authorized Distributor

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CGHV40100F CGHV40100F-TB