©2004 Littelfuse, Inc. E9 - 1 http://www.littelfuse.com
Thyristor Product Catalog + 1 972-580-7777
Sidac
(79 V to 330 V)
E9
General Description
The sidac is a silicon bilateral voltage triggered switch with
greater power-handling capabilities than standard diacs. Upon
application of a voltage exceeding the sidac breakover voltage
point, the sidac switches on through a negative resistance region
to a low on-state voltage. Conduction continues until the current
is interrupted or drops below the minimum holding current of the
device.
Teccor’s sidacs feature glass-passivated junctions to ensure a
rugged and dependable device capable of withstanding harsh
environments.
Variations of devices covered in this data sheet are available for
custom design applications. Consult the factory for more informa-
tion.
R
o
H
S
Applications
• High-voltage lamp ignitors
• Natural gas ignitors
• Gas oil ignitors
• High-voltage power supplies
•Xenon ignitors
• Overvoltage protector
• Pulse generators
• Fluorescent lighting ignitors
• HID lighting ignitors
Features
•RoHS Compliant
• AC circuit oriented
• Glass-passivated junctions
• High surge current capability
E9
TO-92
Type 70
DO-214
Surface Mount
TO-202
DO-15X
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Sidac Data Sheets
Specific Test Conditions
di/dt — Critical rate-of-rise of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM;
TJ ≤ 100 °C
dVq/dt — Critical rate-of-rise of turn-off voltage at 8 kHz
IBO — Breakover current 50/60 Hz sine wave
IDRM — Repetitive peak off-state current 50/60 Hz sine wave; V = VDRM
IH — Dynamic holding current 50/60 Hz sine wave; R = 100 Ω
IT(RMS) — On-state RMS current TJ ≤ 125 °C 50/60 Hz sine wave
ITSM — Peak one-cycle surge current 50/60 Hz sine wave (non-
repetitive)
RS — Switching resistance 50/60 Hz sine wave
VBO — Breakover voltage 50/60 Hz sine wave
VDRM — Repetitive peak off-state voltage
VTM — Peak on-state voltage; IT = 1 A
General Notes
• All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
• Storage temperature range (TS) is -65 °C to +150 °C.
• The case (TC) or lead (TL) temperature is measured as shown on
the dimensional outline drawings in the “Package Dimensions” sec-
tion of this catalog.
• Junction temperature range (TJ) is -40 °C to +125 °C.
• Lead solder temperature is a maximum of +230 °C for 10 s maxi-
mum; ≥1/16" (1.59 mm) from case.
Electrical Specification Notes
(1) See Figure E9.5 for VBO change versus junction temperature.
(2) See Figure E9.6 for IBO versus junction temperature.
(3) See Figure E9.2 for IH versus case temperature.
(4) See Figure E9.13 for test circuit.
(5) See Figure E9.1 for more than one full cycle rating.
(6) TC ≤ 90 °C for TO-92 Sidac
TC ≤ 105 °C for TO-202 Sidacs
TL ≤ 100 °C for DO-15X
TL ≤ 90 °C for DO-214
(7) See Figure E9.14 for clarification of sidac operation.
(8) For best sidac operation, the load impedance should be near or
less than switching resistance.
(9) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(10) Do not use electrically connected mounting tab or center lead.
(11) The K2401F1 sidac is designed to ensure good commutation at
higher switching frequencies, as required in ignitor circuits for high
intensity discharge (HID) lighting. A typical circuit for a metal halide
lamp ignitor is shown in Figure E9.17. With proper component
selection this circuit will produce three pulses for ignition of Osram
lamp types such as HQI-T70W, HQI-T150W, and HQI-T250W which
require a minimum of three pulses at 4 kV magnitude and >1 µs
duration each at a minimum repetition rate of 3.3 kHz.
V-I Characteristics
Type
Part No. IT(RMS) VDRM VBO IDRM IBO IH
TO-92 DO-15X
(10)
TO-202
DO-214
(6) (7) (8)
Amps Volts
(1)
Volts µAmps
(2)
µAmps
(3) (4)
mAmps
See “Package Dimensions” section for variations. (9) MAX MIN MIN MAX MAX MAX TYP MAX
K0900E70 K0900G K0900S 1±70 79 97 510 60 150
K1050E70 K1050G K1050S 1±90 95 113 510 60 150
K1100E70 K1100G K1100S 1±90 104 118 510 60 150
K1200E70 K1200G K1200S 1±90 110 125 510 60 150
K1300E70 K1300G K1300S 1±90 120 138 510 60 150
K1400E70 K1400G K1400S 1±90 130 146 510 60 150
K1500E70 K1500G K1500S 1±90 140 170 510 60 150
K2000E70 K2000G K2000F1 K2000S 1±180 190 215 510 60 150
K2200E70 K2200G K2200F1 K2200S 1±180 205 230 510 60 150
K2400E70 K2400G K2400F1 K2400S 1±190 220 250 510 60 150
K2401F1 (11) ±190 220 250 510 60 150
K2500E70 K2500G K2500F1 K2500S 1±200 240 280 510 60 150
K3000F1 1±200 270 330 510 60 150
Pin 1
Pin 2
Do not use
Pin 3
Do
not
use
tab
RS
VBO VS
–()
ISIBO
–()
--------------------------------=
-V
+I
V
DRM
+V
V
S
I
S
I
H
R
S
I
DRM
I
BO
V
BO
V
T
I
T
(I
S
- I
BO
)
(V
BO
- V
S
)
R
S =
-I
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Thyristor Product Catalog +1 972-580-7777
Data Sheets Sidac
LK
* See Electrical Specification Note (6).
** RθJA for TO-202 Type 23 and Type 41 is 70 °C/Watt.
*** Mounted on 1 cm2 copper foil surface; two-ounce copper foil
Figure E9.1 Peak Surge Current versus Surge Current Duration
Figure E9.2 Normalized DC Holding Current versus Case/Lead
Temperature
VTM ITSM RSdVq/dt dv/dt di/dt
Volts
MAX
(5)
Amps
(8)
kΩVolts/µSec Volts/µSec Amps/µSec
Package 60 Hz 50 Hz
E G F S MIN MIN MIN TYP
1.5 1.5 1.5 20 16.7 0.1 20 1500 150
1.5 1.5 1.5 20 16.7 0.1 20 1500 150
1.5 1.5 1.5 20 16.7 0.1 20 1500 150
1.5 1.5 1.5 20 16.7 0.1 20 1500 150
1.5 1.5 1.5 20 16.7 0.1 20 1500 150
1.5 1.5 1.5 20 16.7 0.1 20 1500 150
1.5 1.5 1.5 20 16.7 0.1 20 1500 150
1.5 1.5 31.5 20 16.7 0.1 20 1500 150
1.5 1.5 31.5 20 16.7 0.1 20 1500 150
1.5 1.5 31.5 20 16.7 0.1 20 1500 150
3.3 20 16.7 242 1500 150
1.5 1.5 31.5 20 16.7 0.1 20 1500 150
320 16.7 0.1 20 1500 150
Thermal Resistance (Steady State)
RθJC [RθJA] °C/W (TYPICAL) *
E Package G Package F Package S Package
35 [95] 18 [75] 7 [45] ** 30 *** [85]
1.0 10 100 1000
1.0
2.0
4.0
6.0
8.0
10
20
40
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: IT RMS Maximum Rated
Value at Specified Junction Temperature
Notes:
1) Blocking capability may be lost during
and immediately following surge
current interval.
2) Overload may not be repeated until
junction temperature has returned
to steady-state rated value.
Surge Current Duration – Full Cycles
Peak Surge (Non-repetitive)
On-state Current [ITSM] – Amps
100
0
.5
1.0
2.0
1.5
-15-40 +25 +65 +105 +125
Case Temperature (TC) – ˚C
IH
IH(TC = 25 ˚C)
Ratio of
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Sidac Data Sheets
Figure E9.3 Repetitive Peak On-state Current (ITRM) versus
Pulse Width at Various Frequencies
Figure E9.4 Maximum Allowable Ambient Temperature versus
On-state Current
Figure E9.5 Normalized VBO Change versus Junction Temperature
Figure E9.6 Normalized Repetitive Peak Breakover Current versus
Junction Temperature
Figure E9.7 On-state Current versus On-state Voltage (Typical)
Figure E9.8 Power Dissipation (Typical) versus On-state Current
[Refer to Figure E9.14 for Basic Sidac Circuit]
di/dt Limit Line
0.6
0.8
4
2
4
6
8
10
20
40
60
80
100
200
400
600
2 x 10-3 68
1 x 10-22468
1 x 10-124681
1
Pulse base width (to) – ms
Repetitive Peak
On-state Current (ITRM) – Amps
VBO Firing
Current
Waveform
Non-Repeated
Repetition Frequency f=5 Hz
f = 10 Hz
f = 100 Hz
f = 1 kHz
f = 5 kHz
f = 10 kHz
f = 20 kHz
TJ = 125 ºC Max
to
ITRM
l/f
Non-Repeated
0 0.2 0.4 0.6 0.8 1.0
20
40
60
80
100
120
140
25
RMS On-state Current [IT(RMS)] – Amps
Maximum Allowable Ambient Temperature (TA) – ˚C
CURRENT WAVEFORM: Sinusoidal - 60 Hz
LOAD: Resistive or Inductive
FREE AIR RATING
TO-92 and DO-214
DO-15X and TO-202 Type 23 and 41
TO-202 Type 1
-12
-20 0 +20 +40 +60 +80 +100 +120
-10
-8
-6
-4
-2
0
+2
+4
-40 +25
Junction Temperature (TJ) – ˚C
Percentage of VBO Change – %
+140
K2xxxF1
K1xxxE
K1xxxG
K1xxxS
K2xxxE
K2xxxG
K2xxxS
20 30 40 50 60 8070 90 100 110 120
1
2
3
4
5
6
7
8
9
Junction Temperature (TJ) – ˚C
Repetitive Peak Breakover
Current (IBO) Multiplier
V = VBO
130
00.8 1.21.0 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.
6
0
1
2
3
4
5
6
7
8
9
Positive or Negative Instantaneous On-state Voltage (vT) – Volts
Positive or Negative Instantaneous
On-state Current (iT) – Amps
TL = 25 ˚C
TO-92, DO-214 and DO-15X
"E", "S" and "G" Packages
TO-202 "F" Package
0.2 0.4 0.6 0.8 1.0
0
0.4
0.8
1.2
1.6
0.2
0.6
1.0
1.4
1.8
2.0
2.2
RMS On-state Current [IT(RMS)] – Amps
Average On-state
Power Dissipation [PD(AV)] – Watts
"E", "S" and "G" Packages
TO-92, DO-214 and DO-15X
TO-202 "F" Package
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE:
See Basic Sidac Cirucit
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Thyristor Product Catalog +1 972-580-7777
Data Sheets Sidac
Figure E9.9 Comparison of Sidac versus SCR for Gas Ignitor Circuit
Figure E9.10 Circuit (Low Voltage Input) for Gas Ignition
Figure E9.11 Typical High Pressure Sodium Lamp Firing Circuit
Figure E9.12 Xenon Lamp Flashing Circuit
Figure E9.13 Dynamic Holding Current Test Circuit for Sidacs
Figure E9.14 Basic Sidac Circuit
100-250 V ac
60 Hz 100-250 V ac
60 Hz
SCR Sidac
4.7 µF
100 V
10 µF
50 V
24 V ac
60 Hz
4.7 µF
100 V
½ W K1200E
Sidac
200 V
H.V.
Ignitor
1.2 µF
4.7 k
- +
- +
+
-
Sidac
120 V ac
60 Hz 16 mH
3.3 k
0.47 µF
400 V
Ballast
Sidac
220 V ac
60 Hz
7.5 k
0.22 µF
Ballast
Lamp
120 V ac 220 V ac
Lamp
- +
+
-
Xenon Lamp
K2200G
10 µF
2 W
120 V ac
60 Hz
10 µF
450 V 4 kV
0.01 µF
400 V
20 M
Sidac
200-
400 V
100
250 V
Trigger
Transformer
20:1
100-250 V ac
60 Hz
Scope
Push to testS1 Switch to test
in each direction
100 Ω
1%
Device
Under
Test
S1
Scope Indication
Trace Stops
I
H
I
PK
Load
100-250 V ac
60 Hz IH
VBO
120-145˚
Conduction
Angle
IH
IH
Load Current
VBO
VBO
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Sidac Data Sheets
Figure E9.15 Relaxation Oscillator Using a Sidac
Figure E9.16 Sidac Added to Protect Transistor for Typical Transistor Inductive Load Switching Requirements
Figure E9.17 Typical Metal Halide Ignitor Circuit
VDC(IN) ≥ VB0 VC
ILRL
R
SIDAC
(a) Circuit
Rmax ≤VIN - VBO
IBO
Rmin ≥VIN - VTM
IH (MIN)
(b) Waveforms
VBO
VC
IL
t
t
C
VCE Monitor
100 mH
IC Monitor
+
-
RS = 0.1 Ω
Test Circuit
VBB1 =10 V
+
-
VBB2 =0
RBB2 =
100 Ω
RBB1 =
150 Ω
2N6127
(or equivalent)
50 Ω
50 Ω
Input
(See Note B)
TIP-47
VCC = 20 V
Voltage and Current Waveforms
Input
Voltage 0 V
5 V
0.63 A
0
Sidac VBO
10 V
VCE(sat)
tw ≈ 3 ms
(See Note A)
Collector
Current
Collector
Voltage
100 ms
tw
Note A: Input pulse width is increased until ICM = 0.63 A.
Note B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected.
The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the
transistor could be destro
y
ed.
Ballast
K2401F1
220 V / 240 V
50 / 60 Hz Metal
Halide
Lamp
H.V.
Step-up
Transformer
0.1 – 0.15 µF
0.22 – 0.33µF
5 – 6µH
5.6K – 8.2K
5W
