Sep.2000
CM
A
S(4 - Mounting
Holes)
B
3 - M6 Nuts
E
D
Q
KKK
F
R
QN G
P
H
J
U
CL
M
H
TC Measured
Point
E2
G1
E1
G2
E2
C1C2E1
T
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.87 22.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
Dimensions Inches Millimeters
K 0.71 18.0
L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
S 0.25 Dia. 6.5 Dia.
T 0.6 15.15
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
er y free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offer ing simplified system
assembly and thermal manage-
ment.
Features:
uLow Drive Power
uLow VCE(sat)
uDiscrete Super-Fast Recovery
Free-Wheel Diode
uHigh Frequency Operation
uIsolated Baseplate for Easy
Heat Sinking
Applications:
uAC Motor Control
uMotion/Servo Control
uUPS
uWelding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200DU-24H is a
1200V (VCES), 200 Ampere Dual
IGBT Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 200 24
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM200DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.2000
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Symbol Ratings Units
Junction Temperature Tj-40 to 150 °C
Storage Temperature T stg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC200 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 400* Amperes
Emitter Current** (Tc = 25°C) IE200 Amperes
Peak Emitter Current** IEM 400* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc1130 Watts
Mounting Torque, M6 Main Terminal – 3.5~4.5 N · m
Mounting Torque, M6 Mounting – 3.5~4.5 N · m
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 4.5 6 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts
IC = 200A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge QGVCC = 600V, IC = 200A, VGE = 15V – 750 – nC
Emitter-Collector Voltage* VEC IE = 200A, VGE = 0V – – 3.2 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, TTj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies ––30nF
Output Capacitance Coes VCE = 10V, VGE = 0V – – 10.5 nF
Reverse Transfer Capacitance Cres ––6nF
Resistive Tur n-on Delay Time td(on) VCC = 600V, IC = 200A, – – 200 ns
Load Rise Time trVGE1 = VGE2 = 15V, – – 300 ns
Switch Tur n-off Delay Time td(off) RG = 1.6Ω, Resistive – – 300 ns
Times F all Time tfLoad Switching Operation – – 350 ns
Diode Reverse Recovery Time trr IE = 200A, diE/dt = -400A/µs––300ns
Diode Reverse Recovery Charge Qrr IE = 200A, diE/dt = -400A/µs – 1.1 – µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.11 °C/W
Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.18 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Ther mal Grease Applied – 0.020 – °C/W
MITSUBISHI IGBT MODULES
CM200DU-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Sep.2000
MITSUBISHI IGBT MODULES
CM200DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE, VGE
20
0 250 500
16
12
8
4
0750 1000
VCC = 600V
VCC = 400V
IC = 200A
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101102103
102
101
trr
Irr
di/dt = -400A/µsec
Tj = 25°C
102
101
100
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
101102103
103
102
101
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 1.6 Ω
Tj = 125°C
tf
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
10-1 100102
102
101
100
10-1
VGE = 0V
101
Cies
Coes
Cres
1.0 1.5 2.0 2.5 3.53.0 4.0
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
103
EMITTER CURRENT, IE, (AMPERES)
T
j
= 25°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
048121620
8
6
4
2
0
Tj = 25°C
IC = 80A
IC = 400A
IC = 200A
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 80 160 240 320
4
3
2
1
0400
VGE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
048121620
320
240
160
80
0
400 VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246810
240
80
0
VGE = 20V
15 12
11
8
Tj = 25oC
160
320
400
10
9
Sep.2000
MITSUBISHI IGBT MODULES
CM200DU-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
( IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.11°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.18°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
