MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point A F D S(4 - Mounting Holes) H B E J U H T CM Q Q 3 - M6 Nuts K K K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G N P R M C L Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C Inches Millimeters 4.25 108.0 2.44 62.0 1.14 +0.04/-0.02 29 +1.0/-0.5 Dimensions K Inches Millimeters 0.71 18.0 L 0.87 22.0 M 0.33 8.5 D 3.660.01 93.00.25 N 0.10 2.5 E 1.880.01 48.00.25 P 0.85 21.5 F 0.87 22.0 Q 0.98 25.0 G 0.16 4.0 R 0.11 2.8 H 0.24 6.0 S 0.25 Dia. 6.5 Dia. J 0.59 15.0 T 0.6 15.15 Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-24H is a 1200V (VCES), 200 Ampere Dual IGBT Module. Type CM Current Rating Amperes VCES Volts (x 50) 200 24 Sep.2000 MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Junction Temperature Symbol Ratings Units Tj -40 to 150 C Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts IC 200 Amperes ICM 400* Amperes IE 200 Amperes Storage Temperature Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) Peak Emitter Current** IEM 400* Amperes Maximum Collector Dissipation (Tc = 25C) Pc 1130 Watts Mounting Torque, M6 Main Terminal - 3.5~4.5 N*m Mounting Torque, M6 Mounting - 3.5~4.5 N*m - 400 Grams Viso 2500 Vrms Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V - - 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V - - 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25C - 2.9 3.7 Volts IC = 200A, VGE = 15V, Tj = 125C - - Volts Total Gate Charge QG VCC = 600V, IC = 200A, VGE = 15V - 750 - nC Emitter-Collector Voltage* VEC IE = 200A, VGE = 0V - - 2.85 3.2 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, TTj = 25 C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time tr Switch Turn-off Delay Time Times Fall Time Test Conditions VCE = 10V, VGE = 0V Min. Typ. - - 30 Max. Units nF - - 10.5 nF - - 6 nF VCC = 600V, IC = 200A, - - 200 ns VGE1 = VGE2 = 15V, - - 300 ns td(off) RG = 1.6, Resistive - - 300 ns tf Load Switching Operation - - 350 ns Diode Reverse Recovery Time trr IE = 200A, diE/dt = -400A/s - - 300 ns Diode Reverse Recovery Charge Qrr IE = 200A, diE/dt = -400A/s - 1.1 - C Max. Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module - - 0.11 C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module - - 0.18 C/W Rth(c-f) Per Module, Thermal Grease Applied - 0.020 - C/W Contact Thermal Resistance Units Sep.2000 MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) 400 15 12 VGE = 20V 320 11 240 10 160 9 80 8 0 240 160 80 2 4 6 8 4 3 2 1 0 0 10 VGE = 15V Tj = 25C Tj = 125C 4 8 12 16 20 0 80 160 240 320 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 10 102 IC = 200A 4 2 IC = 80A 4 8 12 16 20 1.5 2.0 2.5 3.0 3.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, trr, (ns) tf td(off) td(on) 102 tr VCC = 600V VGE = 15V RG = 1.6 Tj = 125C 102 COLLECTOR CURRENT, IC, (AMPERES) 103 trr 101 101 102 EMITTER CURRENT, IE, (AMPERES) Coes 100 Cres 100 101 102 GATE CHARGE, VGE di/dt = -400A/sec Tj = 25C Irr Cies COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 102 101 10-1 10-1 4.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 101 101 102 101 1.0 0 0 CAPACITANCE, Cies, Coes, Cres, (nF) 6 101 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 400A REVERSE RECOVERY CURRENT, Irr, (AMPERES) 8 400 VGE = 0V Tj = 25C Tj = 25C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 320 0 0 SWITCHING TIME, (ns) 5 VCE = 10V Tj = 25C Tj = 125C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 400 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 200A VCC = 400V 16 VCC = 600V 12 8 4 0 0 250 500 750 1000 GATE CHARGE, QG, (nC) Sep.2000 MITSUBISHI IGBT MODULES CM200DU-24H TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS ( IGBT) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.11C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.18C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.2000