APT60DF100HJ - Microsemi Power Products Group

APT60DF100HJ

APT60DF100HJ – Rev 1 October 2012

www.microsemi.com 1-5

Absolute maximum ratings

Symbol Parameter Max ratings Unit

VR Maximum DC reverse Voltage

VRRM Maximum Peak Repetitive Reverse Voltage 1000 V

TC = 25°C 90

IF(AV) Maximum Average Forward

Current Duty cycle = 50% TC = 80°C 60

IFSM Non-Repetitive Forward Surge Current 8.3ms TJ = 45°C 540

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

VRRM = 1000V

IC = 60A @ Tc = 80°C

Application

 Switch mode power supplies rectifier

 Induction heating

 Welding equipment

 High speed rectifiers

Features

 Ultra fast recovery times

 Soft recovery characteristics

 High blocking voltage

 High current

 Low leakage current

 Very low stray inductance

 High level of integration

 ISOTOP® Package (SOT-227)

Benefits

 Outstanding performance at high frequency operation

 Low losses

 Low noise switching

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 RoHS Compliant

ISOTOP®Fast Diode

Full Bridge Power Module

APT60DF100HJ

APT60DF100HJ – Rev 1 October 2012

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

IF = 60A 2.2 2.8

IF = 120A 2.7

VF Diode Forward Voltage

IF = 60A Tj = 125°C 1.7

Tj = 25°C 100

IRM Maximum Reverse Leakage Current VR = 1000V Tj = 125°C 500 µA

CT Junction Capacitance VR = 200V 80 pF

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Tj = 25°C 235

trr Reverse Recovery Time Tj = 125°C 285 ns

Tj = 25°C 445

Qrr Reverse Recovery Charge Tj = 125°C 2290 nC

Tj = 25°C 5

IRRM Reverse Recovery Current

IF = 60A

VR = 667V

di/dt = 200A/µs

Tj = 125°C 13

trr Reverse Recovery Time 125 ns

Qrr Reverse Recovery Charge 4170 nC

IRRM Reverse Recovery Current

IF = 60A

VR = 667V

di/dt=1000A/µs

Tj = 125°C

50 A

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

RthJC Junction to Case Thermal resistance 0.9

RthJA Junction to Ambient 20 °C/W

VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 V

TJ,TSTG Storage Temperature Range -55 175

TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C

Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m

Wt Package Weight 29.2 g

APT60DF100HJ

APT60DF100HJ – Rev 1 October 2012

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Typical Performance Curve

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.00001 0.0001 0.001 0.01 0.1 1 10

Rectangular Pulse Duration (Seconds)

Thermal Impedance (°C/W)

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

=25°C

=125°C

100

125

150

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

, Anode to Cathode Voltage (V)

, Forward Current (A)

Forward Current vs Forward Voltage

RRM

vs. Current Rate of Charge

30 A

60 A

120 A

0 200 400 600 800 1000 1200

-diF/dt (A/µs)

RRM

, Reverse Recovery Current (A)

=125°C

=667V

Trr vs. Current Rate of Charge

30 A

60 A

120 A

100

150

200

250

300

350

0 200 400 600 800 1000 1200

-di

/dt (A/µs)

, Reverse Recovery Time (ns)

=125°C

=667V

vs. Current Rate Charge

30 A

60 A

120 A

0 200 400 600 800 1000 1200

-diF/dt (A/µs)

, Reverse Recovery Charge (µC)

=125°C

=667V

Capacitance vs. Reverse Voltage

100

150

200

250

300

350

400

1 10 100 1000

, Reverse Voltage (V)

C, Capacitance (pF)

APT60DF100HJ

APT60DF100HJ – Rev 1 October 2012

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SOT-227 (ISOTOP®) Package Outline

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

25.2 (0.992

)

25.4 (1.000

)

1.95 (.077)

2.14 (.084)

r = 4.0 (.157)

(2 places) 4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

3.30 (.130)

4.57 (.180)

ISOTOP® is a registered trademark of ST Microelectronics NV

APT60DF100HJ

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