APT60DF100HJ ISOTOP(R)Fast Diode Full Bridge Power Module VRRM = 1000V IC = 60A @ Tc = 80C Application Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~ ~ Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP(R) Package (SOT-227) Benefits - Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(AV) Maximum Average Forward Current IFSM Non-Repetitive Forward Surge Current Duty cycle = 50% 8.3ms Max ratings Unit 1000 V TC = 25C 90 TC = 80C TJ = 45C 60 A 540 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APT60DF100HJ - Rev 1 October 2012 Absolute maximum ratings APT60DF100HJ All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Test Conditions IF = 60A IF = 120A Tj = 125C IF = 60A Tj = 25C VR = 1000V Tj = 125C Min Typ 2.2 2.7 1.7 Max 2.8 V 100 500 VR = 200V Unit 80 A pF Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF = 60A VR = 667V di/dt = 200A/s IF = 60A VR = 667V di/dt=1000A/s Min Typ Tj = 25C 235 Tj = 125C 285 Tj = 25C Tj = 125C 445 2290 Tj = 25C 5 Tj = 125C 13 Tj = 125C Max Unit ns nC A 125 ns 4170 nC 50 A Thermal and package characteristics Characteristic Junction to Case Thermal resistance Junction to Ambient Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 -55 Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight www.microsemi.com Typ Max 0.9 20 Unit C/W V 175 300 1.5 29.2 C N.m g 2-5 APT60DF100HJ - Rev 1 October 2012 Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt APT60DF100HJ Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.9 0.8 0.9 0.7 0.6 0.7 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.05 0.1 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 125 trr, Reverse Recovery Time (ns) IF, Forward Current (A) Trr vs. Current Rate of Charge 350 150 TJ=125C 100 75 TJ=25C 50 25 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TJ=125C VR=667V 300 250 200 120 A 150 60 A 100 30 A 50 3.5 0 200 TJ=125C VR=667V 5 120 A 60 A 4 30 A 3 2 1 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (C) QRR vs. Current Rate Charge 6 400 600 800 1000 1200 -diF/dt (A/s) VF, Anode to Cathode Voltage (V) IRRM vs. Current Rate of Charge 60 TJ=125C VR=667V 50 60 A 120 A 30 A 40 30 20 10 -diF/dt (A/s) 0 200 400 600 800 1000 1200 -diF/dt (A/s) Capacitance vs. Reverse Voltage 400 300 250 200 150 100 50 0 1 10 100 1000 VR, Reverse Voltage (V) www.microsemi.com 3-5 APT60DF100HJ - Rev 1 October 2012 C, Capacitance (pF) 350 APT60DF100HJ SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 1.95 (.077) 2.14 (.084) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Dimensions in Millimeters and (Inches) ISOTOP(R) is a registered trademark of ST Microelectronics NV www.microsemi.com 4-5 APT60DF100HJ - Rev 1 October 2012 38.0 (1.496) 38.2 (1.504) APT60DF100HJ DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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