Three Phase Rectifier Bridges PSD 192 IdAV VRRM = 248 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 192/08 PSD 192/12 PSD 192/14 PSD 192/16 PSD 192/18 ~ ~ ~ Symbol Test Conditions IdAV IFSM TC = 90C, module TVJ = 45C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 248 2800 3300 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2500 2750 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 39200 45000 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 31200 31200 A2 s A2 s -40 ... + 150 150 -40 ... + 125 C C C 2500 3000 V V 5 5 270 Nm Nm g i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL 1 mA Maximum Ratings t = 1 min t=1s Mounting torque Terminal connection torque typ. (M6) (M6) Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM 0.3 5 mA mA VF VTO rT RthJC IF = 300 A TVJ = 25C For power-loss calculations only TVJ = TVJM 1.43 0.8 2.2 V V m per diode; DC current per module 0.45 0.075 K/W K/W RthJK per diode; DC current per module 0.6 0.1 K/W K/W dS Creeping distance on surface 10 mm dA a Creeping distance in air Max. allowable acceleration 9.4 50 mm m/s2 TVJ = 25C TVJ = TVJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/ PSD 192 IF(OV) -----IFSM 200 5 10 2 As IFSM (A) TVJ=45C TVJ=150C [A] 2800 1.6 2500 TVJ=45C 150 1.4 TVJ=150C 10 1.2 100 4 1 0 VRRM 50 0.8 1/2 VRRM Tvj = 150C IF 0.6 Tvj = 25C 0 0.5 1 1.5 VF [V] 10 0.4 2 0 10 Fig. 1 Forward current versus voltage drop per diode 700 [W] 1 VRRM 1 2 10 t[ms] 10 75 TC 0.07 0.03 600 1 2 3 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration PSD 192 3 80 = RTHCA [K/W] 85 0.11 90 4 t [ms] 250 DC [A] sin.180 rec.120 200 rec.60 rec.30 100 0.18 105 400 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 95 500 6 150 110 115 300 0.32 100 PVTOT 0 130 0.75 135 140 145 C 150 25 75 IFAVM 125 175 100 125 DC sin.180 rec.120 rec.60 rec.30 200 120 225 0 [A] Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 50 IdAV 0 50 100 150 200 T (C) C Fig.5 Maximum forward current at case temperature 1 K/W Z thJK 0.5 Z thJC Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/