BAT46CW - General Semiconductor, Inc.

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter Symbol Value Unit

Repetitive Peak Reverse Voltage VRRM 100 V

Forward Continuous Current at Tamb = 25°CI

F150(1) mA

Repetitive Peak Forward Current

at tp< 1s, δ< 0.5, Tamb = 25°CIFRM 350(1) mA

Surge Forward Current at tp< 10ms, Tamb = 25°CI

FSM 750(1) mA

Power Dissipation(1) at Tamb = 65°CP

tot 150(1) mW

Thermal Resistance Juntion to Ambient Air RθJA 0.3(1) °C/mW

Junction Temperature Tj125 °C

Ambient Operating Temperature Range Tamb –65 to +125 °C

Storage Temperature Range TS–65 to +150 °C

12/1/00

Features

• For general purpose applications.

• This diode features very low turn-on voltage and

fast switching. This device is protected by a PN

junction guard ring against excessive voltage, such

as electrostatic discharges

• This diode is also available in the SOD-123 case

with type designation BAT46W and in the

MiniMELF case with type designations LL46.

Mechanical Data

Case: DO-35 Glass Case

Weight: approx. 0.13g

Packaging Codes/Options:

D7/10K per 13” reel (52mm tape), 20K/box

D8/10K per Ammo tape (52mm tape), 20K/box

Electrical Characteristics (TJ= 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit

Reverse Breakdown Voltage V(BR)R IR = 100µA (pulsed) 100 — — V

VR = 1.5V — — 0.5

VR = 1.5V, Tj = 60°C — — 5

VR = 10V — — 0.8

Leakage Current IRVR = 10V, Tj = 60°C — — 7.5 µA

Pulse Test tp < 300µs, δ< 2% VR = 50V — — 2

VR = 50V, Tj = 60°C — — 15

VR = 75V — — 5

VR = 75V, Tj = 60°C — — 20

Forward Voltage IF= 0.1mA — — 0.25

Pulse Test tp < 300µs, δ< 2% VFIF = 10mA — — 0.45 V

IF = 250mA — — 1

Capacitance Ctot VR= 0V, f = 1MHz — 10 — pF

VR= 1V, f = 1MHz — 6 —

Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature

DO-204AH (DO-35 Glass)

Dimensions in inches

and (millimeters)

BAT46

Schottky Diode