TIP110/TIP111/TIP112 — NPN Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP110/TIP111/TIP112 Rev. 1.0.0 1
November 2008
TIP110/TIP111/TIP112
NPN Epitaxial Silicon Darlington Transistor
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• Complementary to TIP115/116/117
• High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
• Low Collector-Emitter Saturation Voltage
• Industrial Use
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage : TIP110
: TIP111
: TIP112
60
80
100
V
V
V
VCEO
Collector-Emitter Voltage : TIP110
: TIP111
: TIP112
60
80
100
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 2 A
ICP Collector Current (Pulse) 4 A
IB Base Current (DC) 50 mA
PC Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 50 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
Equivalent Circuit
B
E
C
R1 R2
R1 10 k W@
R2 0.6 k W@
TIP110/TIP111/TIP112 — NPN Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP110/TIP111/TIP112 Rev. 1.0.0 2
Electrical Characteristics* Ta=25°C unless otherwise noted
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP110
: TIP111
: TIP112
IC = 30mA, IB = 0 60
80
100
V
V
V
ICEO Collector Cut-off Current
: TIP110
: TIP111
: TIP112
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
2
2
2
mA
mA
mA
ICBO Collector Cut-off Current
: TIP110
: TIP111
: TIP112
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
1
1
1
mA
mA
mA
IEBO Emitter Cut-off Current VBE = 5V, IC = 0 2 mA
hFE DC Current Gain VCE = 4V, IC = 1A
VCE = 4V, IC = 2A
1000
500
VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 8mA 2.5 V
VBE(on) Base-Emitter On Voltage VCE = 4V, IC = 2A 2.8 V
Cob Output Capacitance VCB = 10V, IE = 0, f =
0.1MHz
100 pF
TIP110/TIP111/TIP112 — NPN Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP110/TIP111/TIP112 Rev. 1.0.0 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
0 1 2 3 4 5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IB = 400mA
IB = 450mA
IB = 500mA
I
B
= 350
m
A
I
B
= 300
m
A
I
B
= 250
m
A
IB = 200mA
IB = 150mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.01 0.1 1 10
10
100
1000
10000
VCE = 4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.1
1
10
100
IC = 500 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10 100
1
10
100
1000
f = 0.1 MHz
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
1 10 100
0.1
1
10
1mS
5mS
DC
TIP 110
TIP 111
TIP 112
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP110/TIP111/TIP112 — NPN Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP110/TIP111/TIP112 Rev. 1.0.0 4
Mechanical Dimensions
TO220
TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington TransistorTIP110/TIP111/TIP112
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP110/TIP111/TIP112 Rev. A1 5
Rev. I31
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