R09DS0003EJ0100 Rev.1.00 Page 1 of 6
Jul 14, 2010
PreliminaryData Sheet
NE202930
Silicon NPN Epitaxial High Frequency Transistor
FEATURES
• High transition frequency fT = 11 GHz TYP.
• Ideal for low noise and low distortion amplification
• Suitable for equipments of low collector voltage (Less than 5 V)
• Suitable for up to 1 GHz applications
APPLICATIONS
• LNA (Low Noise Amplifier) or power splitter for digital-TV
OUTLINE
RENESAS Package code: 30
(Package name: 3-pin super minimold (30 PKG))
Note: Marking is "R7D"
1. Emitter
2. Base
3. Collector
ORDERING INFORMATION
Part Number Order Number Package Marking Supplying Form
NE202930-T1 NE202930-T1-A
3-pin super
minimold (30 PKG)
(Pb-Free)
R7D • Embossed tape 8 mm wide
• Pin 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE202930
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 9 V
Collector to Emitter Voltage
(Base Short)
VCES 9 V
Collector to Emitter Voltage
(Base Open)
VCEO 6 V
Emitter to Base Voltage VEBO 2 V
Collector Current IC 100 mA
Total Power Dissipation Note P
tot 150 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note: Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0003EJ0100
Rev.1.00
Jul 14, 2010
NE202930
R09DS0003EJ0100 Rev.1.00 Page 2 of 6
Jul 14, 2010
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO V
CB = 5 V, IE = 0 − − 100 nA
Emitter Cut-off Current IEBO V
EB = 1 V, IC = 0 − − 100 nA
DC Current Gain hFE
Note1 V
CE = 5 V, IC = 5 mA 85 140 205 −
RF Characteristics
Gain Bandwidth Product fT V
CE = 5 V, IC = 30 mA, f = 1 GHz − 11.0 − GHz
Insertion Power Gain ⏐S21e⏐2 V
CE = 5 V, IC = 30 mA, f = 1 GHz 11.5 13.5 − dB
Noise Figure (1) NF1 VCE = 5 V, IC = 5 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
− 1.15 1.5 dB
Noise Figure (2) NF2 VCE = 5 V, IC = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
− 1.5 − dB
Associated Gain (1) Ga1 VCE = 5 V, IC = 5 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
10.0 12.0 − dB
Associated Gain (2) Ga2 VCE = 5 V, IC = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
− 13.5 − dB
Reverse Transfer Capacitance Cre Note 2 V
CB = 5 V, IE = 0, f = 1 MHz − 0.6 0.8 pF
Maximum Stable Power Gain MSG Note 3 V
CE = 5 V, IC = 30 mA, f = 1 GHz 13.5 15.5 − dB
Gain 1 dB Compression Output
Power
PO (1 dB) VCE = 5 V, IC (set) = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
− 19 − dBm
Output 3rd Order Intercept Point OIP3 VCE = 5 V, IC (set) = 30 mA, f = 1 GHz,
Δ
f = 1 MHz, ZS = ZSopt, ZL = ZLopt
− 32 − dBm
Notes: 1. Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded.
3. MSG =
hFE CLASSIFICATION
Rank YFB
Marking R7D
hFE Value 85 to 205
S21
S12
NE202930
R09DS0003EJ0100 Rev.1.00 Page 3 of 6
Jul 14, 2010
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
025 50 75 100 125 150
150
100
50
200
Free Air
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ambient Temperature TA (°C)
Total Power Dissipation Ptot (mW)
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0
0
5
10
20
12 3 45
100
A
15
μ
IB = 10
A
μ
20
A
μ
30
A
μ
40
A
μ
50
A
μ
60
A
μ
70
A
μ
80
A
μ
90
A
μ
Collector to Base Voltage VCB (V)
Reverse Transfer Capacitance Cre (pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
012 3 4 9
56 7 8
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
0
0.01
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0
0.001
0.0001
VCE = 5 V
Collector Current IC (mA)
DC Current Gain hFE
DC CURRENT GAIN
vs. COLLECTOR CURRENT
VCE = 5 V
0.001
10
100
1 000
0.01 0.1 1 10 100
1
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 5 V,
f = 1 GHz
14
12
10
8
6
4
2
0101 100
Remark The graphs indicate nominal characteristics.
NE202930
R09DS0003EJ0100 Rev.1.00 Page 4 of 6
Jul 14, 2010
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
110
25
20
15
10
5
0
MAG
MSG
|S
21e
|
2
0.1
Collector Current I
C
(mA)
V
CE
= 5 V,
f = 1 GHz
18
16
14
12
10
8
6
4
2
0101 100
MSG
|S
21e
|
2
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
MAG
Each Input Power P
in (each)
(dBm)
V
CE
= 5 V,
I
CE (set)
= 30 mA,
f = 1 GHz
–50
–80 010 20
–10
–30 30
Each Output Power P
out (each)
(dBm)
3rd Order Intermodulation Distortion IM
3
(dB)
EACH OUTPUT POWER, IM
3
vs. EACH INPUT POWER
P
out
IM
3
–70
–60
–20
–40
–30
–10
20
0
10
40
30
–20
Input Power P
in
(dBm)
COLLECTOR CURRENT vs. INPUT POWER
Linear Gain G
L
(dB)
Output Power P
out
(dBm)
Collector Current I
C
(mA)
30
20
10
0
–10
200
150
100
50
0
–20 –10 010
V
CE
= 5 V,
I
CE (set)
= 30 mA,
f = 1 GHz
G
L
P
out
I
C
OUTPUT POWER, LINEAR GAIN,
20
Collector Current I
C
(mA)
Noise Figure NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
V
CE
= 5 V,
f = 1 GHz,
Z
S
= Z
opt
, Z
L
= 50 Ω
1
5
4
3
2
1
010 100
Associated Gain G
a
(dB)
15
13
11
9
7
5
Collector Current I
C
(mA)
Noise Figure NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
V
CE
= 5 V,
f = 1 GHz,
Z
S
= Z
L
= Z
opt
1
5
4
3
2
1
010 100
Associated Gain G
a
(dB)
15
13
11
9
7
5
V
CE
= 5 V,
I
CE
= 5 mA
Remark The graphs indicate nominal characteristics.
NE202930
R09DS0003EJ0100 Rev.1.00 Page 5 of 6
Jul 14, 2010
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
NE202930
R09DS0003EJ0100 Rev.1.00 Page 6 of 6
Jul 14, 2010
PACKAGE DIMENSIONS
3-PIN SUPER MINIMOLD (30 PKG) (UNIT: mm)
0.9±0.1
0.3
0.15
+0.1
–0.05
0 to 0.1
Marking
2.0±0.2
0.65 0.65
0.3
+0.1
–0
0.3
+0.1
–0
1
2
3
2.1±0.1
1.25±0.1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
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C - 1
Revision History NE202930 Data Sheet
Description
Rev. Date
Page Summary
1.00 Jul 14, 2010 − First edition issued
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