10900 PAGE AVE.
ST. LOUIS, MO. 63132 USA
FEATURES PRODUCT DESCRIPTION
PACKAGE DIMENSIONS inch (mm)
ELECTRO-OPTICAL CHARACTERISTICS @ 25° C
0.6
±70
17
30
ISC
SR
ID
VBR
CJ
θ1/2
SHORT CIRCUIT CURRENT @ 100 2850 K
SENSITIVITY @ PEAK
DARK CURRENT @ VR = 10 V
REVERSE BREAKDOWN VOLTAGE @ 100 µA
JUNCTION CAPACITANCE @ VR = 0 V, 1 MHz
ANGULAR RESPONSE (50% RESPONSE POINT)
TYP.MIN.SYMBOLPARAMETER
µA
A/W
nA
V
pF
Degrees
25
100
UNITSMAX.
This VTP processed P on N planar silicon
photodiode is housed in an IR transmitting,
T-1 3/4 endlooking package.
These diodes exhibit low dark current under
reverse bias. The VTP process offers low
capacitance, resulting in fast response times.
•Low dark current
•Fast response
•Infrared transmiting/visible blocking
spectral range
•Low junction capacitance
CASE 26F T-1 3/4 FLAT
CHIP SIZE: .075 x .075 (1.90 x 1.90)
TOTAL EXPOSED AREA: .0036 in2 (2.326 mm2)
FAX 314-423-3956
PHONE 314-423-4900
PRELIMINARY ENGINEERING DATA SHEET
SILICON PHOTODIODE
VTP1332F
GENERAL CHARACTERISTICS
mV
nm
nm
ns
% / °C
% / °C
mV/ °C
°C
420
920
725 - 1100
20
+0.20
+11.0
−2.0
− 40 to +100
VOC
λpk
λrange
tR / tF
TC ISC
TC ID
TC VOC
TAMB
OPEN CIRCUIT VOLTAGE @ 100 2850 K SOURCE
PEAK SPECTRAL RESPONSE @ 25°C
SPECTRAL APPLICATION RANGE
RISE/FALL TIMES @ 800 nm, VR =10 V, RL = 50 Ω
TEMPERATURE COEFFICIENT
SHORT CIRCUIT CURRENT @ 2850 K SOURCE
DARK CURRENT @ VR = 10 V
OPEN CIRCUIT VOLTAGE
TEMPERATURE RANGE, OPERATING & STORAGE
UNITSTYPICAL RATINGSYMBOLPARAMETER
Specifications subject to change without prior notice.
Information supplied by PerkinElmer is believed to be
reliable, however, no responsibility is assumed for pos-
sible inaccuracies or omissions. The user should deter-
mine the suitability of this product in his own application.
No patent rights are granted to any devices or circuits
described herein.
TYPICAL CHARACTERISTIC CURVES
RELATIVE JUNCTION CAPACITANCE vs BIAS VOLTAGE
(REFERRED TO ZERO BIAS)
RELATIVE SPECTRAL RESPONSE
abcto
