MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION
725 E.Walnut St., Garland, TX 75040
(972)272-3571
Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
66183
PROTON RADIATION TOLERANT 6 PIN LCC OPTOCOUPLER
OPTOELECTRONIC PRODUCTS
DIVISION
03/11/2009
Features:
High Reliability
Base lead provided for conventional transistor
biasing
Rugged package
Stability over wide temperature
+1000V electrical isolation
JANS Level screening available
Applications:
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
DESCRIPTION
The 66183 is a single channel device electrically similar to the 4N49. This product has been designed to be more tolerant to
proton radiation. The 66183 optocoupler is packaged in a hermetically sealed 6 pin leadless chip carrier (LCC). This device
can be supplied to customer specifications as well as tested in accordance with MIL-PRF-19500 to Class S level.
ABS OLUTE MAX IMUM R AT I NGS
Input to Output Isolation Voltage ........................................................................................................................................... 1 kV
Input Diode Continuous Forward Current ......................................................................................................................... 40 mA
Peak Forward Input Current (v alue applies for tw
10
µ
s, PRR
<
300 pps) ........................................................................... 1 A
Reverse Input Voltage ............................................................................................................................................................ 2 V
Input Power Dissipation (Note 1) …………………………………..…………………………………………………………. 80 mW
Emitter-Base Voltage .......................................................................................................... ..................................................... 7 V
Collector-Emitter Voltage (Value applies to em itter-base open- circuited and the input diode equal to zero) .................... 60 V
Collector-Base Voltage .......................................................................................................................................................... 60 V
Continuous Collector Current ............................................................................................................................................. 50 mA
Continuous Transistor Power Dissipation (Note 2) ………………………………………………………………………….300 mW
Storage Temperature ......................................................................................................................................... -65°C to +150°C
Operating Free-Air Temperature Range ............................................................................................................ -55°C to +125°C
Lead Solder Temperature ( 10 seconds max.) ................................................................................................................... 240°C
Notes:
1. Derate linearly at the rate of 1.33 mW/°C above 65°C case.
2. Derate linearly at the rate of 3 mW/°C above 25°C case.
Package Dimensions Schematic Diagram
5 PLS
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
0.175 [4.45]
0.165 [4.19]
0.098 [2.49]
0.082 [2.08]
6
1
2
5
3
4
IDENTIFIER
0.250 [6.35]
0.240 [6.10]
PIN 1
0.08 0 [2 .03 ]
0.06 6 [1 .68 ]
0.055 [1.40]
0.045 [1.14]
0.070 [1.78]
0.060 [1.52]
0.105 [2.67]
0.095 [2.41]
0.028 [0.71]
0.022 [0.56]
K 6
A 1
4 B
5 E
3 C
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION
725 E.Walnut St., Garland, TX 75040
(972)272-3571
Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
66183
PROTON RADIATION TOLERANT 6 PIN LCC OPTOCOUPLER
03/11/2009
ELECTRICAL CHARA CTERISTICS
T
A
= 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
Input Diode Static Reverse Current I
R
10 µA V
R
= 2 V
Input Diode Static Forward Voltage -55
°
C V
F
1.0 2.2 V I
F
= 10 mA
Input Diode Static Forward Voltage +25°C V
F
0.8 1.8 2.0 V I
F
= 10 mA
Input Diode Static Forward Voltage +100
°
C V
F
0.8 2.2 V I
F
= 10 mA
OUTP U T TR ANS IS TO R
T
A
= 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
Collector-Base Breakdown Voltage V
(
BR
)
CBO
45 V I
C
= 100 µA, I
B
= 0, I
F
= 0
Collector-Emitt er Breakdown Voltage V
(
BR
)
CEO
40 V I
C
= 1 mA, I
B
= 0, I
F
= 0
Emitter-Base Break down Voltage V
(
BR
)
EBO
7
V I
C
= 0 mA, I
E
= 100 µA, I
F
= 0
Off-State Collect or Current
+100
°
C I
CEO
100
100 nA
µ
A V
CE
= 20 V, I
F
= 0 mA, I
B
= 0
COUPLED CHARACTERISTICS
T
A
= 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
On State Collector Current I
C(ON)
2.0 mA V
CE
= 5 V, I
F
= 1 mA, I
B
=0
On State Collector Current +100
°
C I
C(ON)
2.0 mA V
CE
= 5.0 V, I
F
= 2 mA, I
B
=0
On State Collector Current -55
°
C I
C
(
ON
)
2.8 mA V
CE
= 5 V, I
F
= 2 mA, I
B
=0
Collector-Emitter Saturation Voltage V
CE
(
SAT
)
0.3 V I
F
= 2 mA, I
C
= 2 mA
Input to Output Isolation Voltage V
I-O
1000
V
I
I-O
= 100 nA 1
Input to Output Capacit anc e C
IO
2.5 5 pF f = 1MHz, V
I-O
= 1000 V 1
Rise Time-Phototransis t or Operation t
r
10 25
µ
s V
CC
= 10 V, I
F
= 10 mA,
R
L
= 100
, I
B
= 0 2
Fall Time-Phototransist or Operat ion t
f
10 25
µ
s V
CC
= 10V, I
F
= 10mA,
R
L
= 100
, I
B
= 0 2
NOTES:
1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
2. This parameter must be measured using pulse techniques (t
W
= 100
µ
s duty cycle
<
1%).
RECOMMENDED OPERATING CONDITIONS:
PARAMETER SYMBOL MIN MAX UNITS
Input Current, Low Level I
FL
0 90
µ
A
Input Current, High Level I
FH
2 10 mA
Supply Voltage V
CE
5 10 V
Operating Temperature T
A
-55 100
°
C
SELECTION GUIDE
PART NUMBER PART DESCRIPTION
66183-001 Commercial
66183-101 Screened to JAN level
66183-103 Screened to JANTX level
66183-105 Screened to JANTXV level
66183-300 Screened to JANS level