1C5D50065D Rev. -
C5D50065D
Silicon Carbide Schottky Diode
Z-Rec® RectifieR
Features
• 650-VoltSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SolarInverters
• MotorDrives
• EVChargers
• UPS
• Automotive
Package
TO-247-3
Maximum Ratings (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 650 V
VRSM SurgePeakReverseVoltage 650 V
VDC DCPeakBlockingVoltage 650 V
IFContinuousForwardCurrent
100
50
46
A
TC=25˚C
TC=130˚C
TC=135˚C
IFRM RepetitivePeakForwardSurgeCurrent 153
106 ATC=25˚C,tP=10ms,HalfSinePulse
TC=110˚C,tP=10ms,HalfSinePulse
IFSM Non-RepetitiveForwardSurgeCurrent 400
330 ATC=25˚C,tP=10ms,HalfSinePulse
TC=110˚C,tP=10ms,HalfSinePulse
IF,Max Non-RepetitivePeakForwardCurrent 2000
1600 ATC=25˚C,tP=10 ms,Pulse
TC=110˚C,tP=10 ms,Pulse
Ptot PowerDissipation 300
130 WTC=25˚C
TC=110˚C
TJ,Tstg
OperatingJunctionandStorage
Temperature
-55 to
+175 ˚C
TO-247MountingTorque 1
8.8
Nm
lbf-in M3Screw
6-32Screw
Part Number Package Marking
C5D50065D TO-247-3 C5D50065
VRRM = 650 V
IF (TC=130˚C) = 50 A
Qc  = 110nC
2C5D50065D Rev. -
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage
1.5
1.25
1.8
V
IF = 50 A TJ=25°C
IF=25ATJ=25°C
IF = 50 A TJ=175°C
IF=25ATJ=175°C
1.8
1.3
2.2
IRReverseCurrent
50
4
500
μA
VR=650V,TJ=25°C
VR=400V,TJ=25°C
VR=650V,TJ=175°C
VR=400V,TJ=175°C
200
6
1000
QCTotalCapacitiveCharge 110 nC
VR=400V,IF = 50 A
di/dt=500A/μs
TJ=25°C
C TotalCapacitance
1970
200
180
pF
VR=0V,TJ=25°C,f=1MHz
VR=200V,TJ=25˚C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC ThermalResistancefromJunctiontoCase 0.5 °C/W
Typical Performance
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
50
75
100
Foward Current, I
F
(A)
T
J
= 75 °C
T
J
= 175 °C
T
J
= 125 °C
0
25
0 0.5 1 1.5 2 2.5 3 3.5 4
Foward Current, I
Foward Voltage, VF(V)
T
J
= -55 °C
T
J
= 25 °C
IF Forward Current (A)
VF Forward Voltage (V) VR Reverse Voltage (V)
IR Reverse Voltage (mA)
0.15
0.20
0.25
0.30
0.35
0.40
0.45
Reverse Leakage Current, I
RR
(mA)
T
J
= 175 °C
T
J
= 125 °C
T
J
= 75 °C
0.00
0.05
0.10
0.15
0 100 200 300 400 500 600 700
Reverse Leakage Current, I
Reverse Voltage, V
R
(V)
T
J
= 25 °C
T
J
= -55 °C
3C5D50065D Rev. -
100
125
150
175
200
225
250
275
300
325
Power Dissipation (W)
0
25
50
75
100
25 50 75 100 125 150 175
Power Dissipation (W)
T
c
Case Temperature (°C)
200
250
300
350
0
50
100
25 50 75 100 125 150 175
Figure4.PowerDerating
Figure3.CurrentDerating
10%Duty
20%Duty
30%Duty
50%Duty
70%Duty
DC
325
300
275
250
225
200
175
150
125
100
75
50
25
0
2550 75100125150175
Typical Performance
IF (A)
TC (°C)
PTOT (W)
TC (°C)
350
300
250
200
150
100
50
0
2550 75100125150175
40
60
80
100
120
Capacitive Charge, Q
C
(nC)
Conditions:
T
J
= 25 °C
0
20
40
0 50 100 150 200 250 300 350 400
Capacitive Charge, Q
Reverse Voltage, VR(V)
Figure5.RecoveryChargevs.ReverseVoltage
Qrr (nC)
VR (V)
120
100
80
60
40
20
0
050100150200250300350400
Conditions:
TJ=25°CFigure6.PowerDerating
800
1000
1200
1400
1600
1800
2000
Capacitance (pF)
Conditions:
TJ= 25 °C
Ftest = 1 MHz
Vtest = 25 mV
0
200
400
600
0.1 1 10 100 1000
Capacitance (pF)
Reverse Voltage, V
R
(V)
Figure6.TypicalCapacitancevs.ReverseVoltage
C (pF)
VR (V)
2000
1800
1600
1400
1200
1000
800
600
400
200
0
Conditions:
TJ=25°C
Ftest=1MHz
Vtest=25mV
0.1 1 10 100 1000
4C5D50065D Rev. -
Typical Performance
10E-3
100E-3
1
Junction To Case Impedance, Z
thJC (oC/W)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
100E-6
1E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, Z
Time, tp(s)
Figure8.TransientThermalImpedance
Thermal Resistance (°C/W)
T (Sec)
1000
10000
IFSM(A)
10
100
1.E-05 1.E-04 1.E-03 1.E-02
tp(s)
10000
1000
100
0
Figure7.Non-repetitivepeakforwardsurgecurrent
versuspulseduration(sinusoidalwaveform)
tp (s)
IFSM (A)
TJ =25°C
TJ=110°C
1E-051E-041E-031E-02
5C5D50065D Rev. -
Part Number Package Marking
C5D50065D TO-247-3 C5D50065
Recommended Solder Pad Layout
Package Dimensions
PackageTO-247-3 POS Inches Millimeters
Min Max Min Max
A .605 .635 15.367 16.130
B.800 .831 20.320 21.10
C .780 .800 19.810 20.320
D.095 .133 2.413 3.380
E.046 .052 1.168 1.321
F.060 .095 1.524 2.410
G.215TYP 5.460TYP
H.175 .205 4.450 5.210
J.075 .085 1.910 2.160
K6˚ 21˚ 6˚ 21˚
L 4˚ 6˚ 4˚ 6˚
M2˚ 4˚ 2˚ 4˚
N 2˚ 4˚ 2˚ 4˚
P .090 .100 2.286 2.540
Q.020 .030 .508 .762
R9˚ 11˚ 9˚ 11˚
S9˚ 11˚ 9˚ 11˚
T2˚ 8˚ 2˚ 8˚
U 2˚ 8˚ 2˚ 8˚
V.137 .144 3.487 3.658
W .210 .248 5.334 6.300
X.502 .557 12.751 14.150
Y .637 .695 16.180 17.653
Z.038 .052 0.964 1.321
AA .110 .140 2.794 3.556
BB .030 .046 0.766 1.168
CC .161 .176 4.100 4.472
W
X
Y
Z
AA
BB
CC
TO-247-3
Note: Recommended soldering proles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
66 C5D50065D Rev. -
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,orairtrafccontrolsystems.
Notes
Diode Model
VT
RT
Diode Model CSD10060
Vf T = VT + If*RT
VT= 0.92 + (Tj * -1.35*10-3)
RT= 0.052 + (Tj * 0.29*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VfT = VT+If*RT
VT =0.9947+(TJ*-0.0013)
RT =0.0093+(TJ*7.00*10-5)
Mouser Electronics
Authorized Distributor
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Cree, Inc.:
C5D50065D