CPH6341-TL-E - ON Semiconductor

CPH6341

No. A1084-1/7

Features

• Low ON-resistance

• High-speed switching

• 4V drive

• Protection diode in

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage VDSS --30 V

Gate-to-Source Voltage VGSS ±20 V

Drain Current (DC) ID--5 A

Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --20 A

Allowable Power Dissipation PD

When mounted on ceramic substrate (900mm2×0.8mm)

1.6 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg --55 to +150 °C

Package Dimensions

unit : mm (typ)

7018A-003

Ordering number : ENA1084A

61312 TKIM/30508PE TIIM TC-00001220

SANYO Semiconductors

DATA SHEET

CPH6341

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network

Product & Package Information

• Package : CPH6

• JEITA, JEDEC : SC-74, SOT-26, SOT-457

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL Marking

Electrical Connection

1, 2, 5, 6

LOT No.

1 : Drain

2 : Drain

3 : Gate

4 : Source

5 : Drain

6 : Drain

SANYO : CPH6

321

645

2.9

0.05

0.4

2.8

1.6

0.2

0.6 0.6

0.9

0.2

0.15

0.95

CPH6341-TL-E

CPH6341

No. A1084-2/7

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions Ratings Unit

min typ max

Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --30 V

Zero-Gate Voltage Drain Current IDSS V

DS=--30V, VGS=0V -- 1 μA

Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA

Cutoff Voltage VGS(off) VDS=--10V, ID=-- 1mA --1.2 --2.6 V

Forward T ransfer Admittance | yfs |VDS=--10V, ID=-- 3A 2.8 4.8 S

Static Drain-to-Source On-State Resistance

RDS(on)1 ID=--3A, VGS=--10V 45 59 mΩ

RDS(on)2 ID=--1.5A, VGS=--4.5V 71 100 mΩ

RDS(on)3 ID=--1.5 A, VGS=--4V 82 115 mΩ

Input Capacitance Ciss VDS=--10V, f=1MHz 430 pF

Output Capacitance Coss 105 pF

Reverse Transfer Capacitance Crss 75 pF

Turn-ON Delay Time td(on)

See speciﬁ ed Test Circuit.

7.5 ns

Rise Time tr 26 ns

Turn-OFF Delay Time td(off) 45 ns

Fall Time tf35 ns

Total Gate Charge Qg VDS=--15V, VGS=--10V, ID=--5A 10 nC

Gate-to-Source Charge Qgs 2.0 nC

Gate-to-Drain “Miller” Charge Qgd 2.5 nC

Diode Forward Voltage VSD IS=--5A, VGS=0V --0.87 --1.2 V

Switching Time Test Circuit

Ordering Information

Device Package Shipping memo

CPH6341-TL-E CPH6 3,000pcs./reel Pb Free

PW=10μs

D.C.≤1%

P.G 50Ω

ID= --3A

RL=5Ω

VDD= --15V

VOUT

CPH6341

VIN

--10V

VIN

CPH6341

No. A1084-3/7

ID -- VDS ID -- VGS

Drain Current, ID -- A

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

Gate-to-Source Voltage, VGS -- V

--1.0

--0.5

--3.0

--1.5

--3.5

--2.0

--4.0

--2.5

--4.5

--5.0

0 --0.2 --0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9

IT13379

0 --1.5--0.5 --2.5 --4.0--3.5--2.0--1.0 --3.0

--2

--4

--6

--1

--3

--5

--25°C

IT13380

--4.0V

VGS= --2.5V

--3.5V

--4.5V

--6.0V

Ta=75°C

VDS= --10V

--10.0V

25°C

--3.0V

--16.0V

IS -- VSD

| yfs | -- ID

Forward T ransfer Admittance, | yfs | -- S

Drain Current, ID -- A

Source Current, IS -- A

Diode Forward Voltage, VSD -- V

SW Time -- IDCiss, Coss, Crss -- VDS

Switching Time, SW Time -- ns

Ciss, Coss, Crss -- pF

Drain Current, ID -- A

RDS(on) -- VGS RDS(on) -- Ta

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C

Drain-to-Source Voltage, VDS -- V

IT13383 IT13384

--0.2 --0.4 --0.6 --0.8 --1.0 --1.2

0.1

1.0

--0.1 2

--0.01 23 57 --1.0 2357

Ta= --25°C

VDS= --10V

--0.01

--0.1

--1.0

VGS=0V

--0.1 --1.0

23 57 --10

23 57

VDD= --15V

VGS= --10V

td(on)

td(off)

IT13385

0 --5 --10 --15

1000

100

3--20 --30--25

Ciss

Coss

Crss

IT13386

100

Ta=75°C

--25°C

f=1MHz

0--4--2 --8 --12--6 --10 --14 --16

120

100

140

160

IT13381 IT13382

ID= --1.5A --3.0A

Ta=25°C

75°C

25°C

--60 --40 --20 0 20 40 60 80 100 120 140 160

160

120

140

100

VGS= --4.0V, ID= --1.5A

VGS= --10V, ID= --3.0A

VGS= --4.5V, ID= --1.5A

--10

357

--10

CPH6341

No. A1084-4/7

VGS -- Qg

Total Gate Charge, Qg -- nC

Gate-to-Source Voltage, VGS -- V

A S O

Drain-to-Source Voltage, VDS -- V

010135792468

IT13388

IT13387

--1

--2

--3

--4

--5

--6

--7

--8

--9

--10 VDS= --15V

ID= --5A

--0.01

--10

--1.0

--0.1

--10--1.0

23 57 23 57 23 5 23 577

--0.1--0.01

ID= --5A

IDP= --20A

Operation in this

area is limited by RDS(on).

DC operation

100ms

10ms

PW≤10μs

1ms

100μs

Ta=25°C

Single pulse

When mounted on ceramic substrate

(900mm2✕0.8mm)

Drain Current, ID -- A

PD -- Ta

Ambient Temperature, Ta -- °C

Allowable Power Dissipation, PD -- W

IT13389

0 20 40 60 80 100 120 140 160

0.5

1.0

1.5

1.6

2.0 When mounted on ceramic substrate

(900mm2✕0.8mm)

CPH6341

No. A1084-5/7

Embossed Taping Speciﬁ cation

CPH6341-TL-E

CPH6341

No. A1084-6/7

Outline Drawing Land Pattern Example

CPH6341-TL-E

Mass (g) Unit

0.015

* For reference

mm Unit: mm

0.6

2.4 1.4

0.95 0.95

CPH6341

No. A1084-7/7PS

This catalog provides information as of June, 2012. Speciﬁ cations and information herein are subject

to change without notice.

Note on usage : Since the CPH6341 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

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