IDP12E120XKSA1 - INFINEON TECHNOLOGIES AG

2009-08-19Rev.2.3 Page 1

IDP12E120

Fast Switching Diode Product Summary

VRRM 1200 V

IF12 A

VF1.65 V

max 150 °C

Pin 1 PIN 2 PIN 3

C A -

Marking

D12E120

Type Package Ordering Code

IDP12E120 PG-TO220-2 -

Maximum Ratings, at T

= 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Repetitive peak reverse voltage VRRM 1200 V

Continous forward current

TC=25°C

TC=90°C

Surge non repetitive forward current

TC=25°C, tp=10 ms, sine halfwave

IFSM 63

Maximum repetitive forward current

TC=25°C, tp limited by Tjmax, D=0.5

IFRM 42.5

Power dissipation

TC=25°C

TC=90°C

Ptot

Operating and storage temperature T

, Tst

-55...+150 °C

Soldering temperature

wavesoldering, 1.6mm (0.063 in.) from case for 10s

TS260 °C

Features

• 1200 V diode technology

• Fast recovery

• Soft switching

• Low reverse recovery charge

• Low forward voltage

• Easy paralleling

• Pb-free lead plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

• Qualified according to JEDEC for target applications

PG-TO220-2

2009-08-19Rev.2.3 Page 2

IDP12E120

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case RthJC - - 1.3 K/W

Thermal resistance, junction - ambient, leaded RthJA - - 62

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

RthJA

Electrical Characteristics, at T

= 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Reverse leakage current

VR=1200V, Tj=25°C

VR=1200V, Tj=150°C

100

1000

µA

Forward voltage drop

IF=12A, Tj=25°C

IF=12A, Tj=150°C

1.65

1.7

2.15

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2009-08-19Rev.2.3 Page 3

IDP12E120

Electrical Characteristics, at T

= 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Reverse recovery time

VR=800V, IF=12A, diF/dt=800A/µs, Tj=25°C

VR=800V, IF=12A, diF/dt=800A/µs, Tj=125°C

VR=800V, IF=12A, diF/dt=800A/µs, Tj=150°C

trr

150

215

225

Peak reverse current

VR=800V, IF = 12 A, diF/dt=800A/µs, Tj=25°C

VR=800V, IF =12A, diF/dt=800A/µs, Tj=125°C

VR=800V, IF =12A, diF/dt=800A/µs, Tj=150°C

Irrm

20.9

21.5

Reverse recovery charge

VR=800V, IF=12A, diF/dt=800A/µs, Tj=25°C

VR=800V, IF =12A, diF/dt=800A/µs, Tj=125°C

VR=800V, IF =12A, diF/dt=800A/µs, Tj=150°C

Qrr

1200

1840

2025

Reverse recovery softness factor

VR=800V, IF=12A, diF/dt=800A/µs, Tj=25°C

VR=800V, IF=12A, diF/dt=800A/µs, Tj=125°C

VR=800V, IF=12A, diF/dt=800A/µs, Tj=150°C

5.8

5.9

2009-08-19Rev.2.3 Page 4

IDP12E120

2 Diode forward current

IF = f(TC)

parameter: Tj≤ 150°C

25 50 75 100 °C 150

1 Power dissipation

Ptot = f (TC)

parameter: T

≤ 150°C

25 50 75 100 °C 150

100

Ptot

3 Typ. diode forward current

IF = f (VF)

0 0.5 1 1.5 2 V 3

-55°C

25°C

100°C

150°C

4 Typ. diode forward voltage

VF = f (Tj)

-60 -20 20 60 100 °C 160

1.2

1.4

1.6

1.8

2.4

12A

24A

2009-08-19Rev.2.3 Page 5

IDP12E120

5 Typ. reverse recovery time

trr = f (diF/dt)

parameter: VR = 800V, Tj = 125°C

200 300 400 500 600 700 800 A/µs 1000

diF/dt

100

200

300

400

500

600

800

trr

24A

12A

6 Typ. reverse recovery charge

Qrr=f(diF/dt)

parameter: VR= 800V, Tj = 125 °C

200 300 400 500 600 700 800 A/µs 1000

diF/dt

1300

1400

1500

1600

1700

1800

1900

2000

2100

2200

2300

2500

Qrr

12A

24A

7 Typ. reverse recovery current

Irr = f (diF/dt)

parameter: VR = 800V, Tj = 125°C

200 300 400 500 600 700 800 A/µs 1000

diF/dt

Irr

24A

12A

8 Typ. reverse recovery softness factor

S = f(diF/dt)

parameter: VR = 800V, Tj = 125°C

200 300 400 500 600 700 800 A/µs 1000

diF/dt

24A

12A

2009-08-19Rev.2.3 Page 6

IDP12E120

9 Max. transient thermal impedance

ZthJC = f (tp)

parameter : D = tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

-4

-3

-2

-1

K/W

IDP12E120

ZthJC

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

2009-08-19Rev.2.3 Page 7

TO-220-2

IDP12E120

2009-08-19Rev.2.3 Page 8

IDP12E120

Published by

Infineon Technologies AG

81726 Munich, Germany

81726 München, Germany

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