IRF5805TR - International Rectifier

HEXFET® Power MOSFET

1/13/03

IRF5805

Absolute Maximum Ratings

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Thermal Resistance

Parameter Max. Units

VDS Drain-Source Voltage -30 V

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.8

ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -3.0 A

IDM Pulsed Drain Current-15

PD @TA = 25°C Maximum Power Dissipation2W

PD @TA = 70°C Maximum Power Dissipation1.28 W

Linear Derating Factor 0.02 W/°C

VGS Gate-to-Source Voltage ± 20 V

TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C

Description

VDSS RDS(on) max ID

-30V 0.098@VGS = -10V -3.8A

0.165@VGS = -4.5V -3.0A

Parameter Max. Units

RθJA Maximum Junction-to-Ambient62.5 °C/W

Top View

1

2

D

G

A

D

S

34

5

6

These P-channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This

benefit provides the designer with an extremely efficient

device for use in battery and load management

applications.

The TSOP-6 package with its customized leadframe

produces a HEXFET® power MOSFET with RDS(on)

60% less than a similar size SOT-23. This package is

ideal for applications where printed circuit board space

is at a premium. It's unique thermal design and RDS(on)

reduction enables a current-handling increase of nearly

300% compared to the SOT-23.

lUltra Low On-Resistance

lP-Channel MOSFET

lSurface Mount

lAvailable in Tape & Reel

lLow Gate Charge

TSOP-6

PD -94029A

IRF5805

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Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V 

trr Reverse Recovery Time –– – 19 29 ns TJ = 25°C, I F = -2.0A

Qrr Reverse Recovery Charge ––– 16 24 nC di/dt = -100A/µs 

Source-Drain Ratings and Characteristics

 

  -15

-2.0

A

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C Reference to 25°C, ID = -1mA

––– ––– 0.098 VGS = -10V, ID = -3.8A 

 ––– 0.165 VGS = -4.5V, ID = -3.0A 

VGS(th) Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA

gfs Forward Transconductance 3.5 ––– ––– S VDS = -10V, ID = -3.8A

––– ––– -15 VDS = -24V, VGS = 0V

––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

QgTotal Gate Charge –– – 11 1 7 ID = -3.8A

Qgs Gate-to-Source Charge ––– 2.3 – –– nC VDS = -15V

Qgd Gate-to-Drain ("Miller") Charge ––– 1.5 – –– VGS = -10V

td(on) Turn-On Delay Time ––– 11 17 VDD = -15V, VGS = -10V

trRise Time ––– 14 21 ID = -1.0A

td(off) Turn-Off Delay Time ––– 90 135 RG = 6.0Ω

tfFall Time ––– 49 74 RD = 15Ω 

Ciss Input Capacitance ––– 511 ––– VGS = 0V

Coss Output Capacitance ––– 79 ––– pF VDS = -25V

Crss Reverse Transfer Capacitance ––– 50 – –– ƒ = 1.0MHz

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

Ω

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

nA

ns

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

S

D

G

 Surface mounted on 1 in square Cu board, t ≤ 10sec.

IRF5805

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1

1

10

100

2.0 3.0 4.0 5.0 6.0

V = -15V

20µs PULS E WID TH

DS

-V , Gate-to-Source Voltage (V)

-I , Drai n-to- Sour ce C ur rent ( A)

GS

D

T = 25 C

J°

T = 150 C

J°

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Tem pera t ur e ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

-10V

-3.8A

0.1 110 100

-VDS , Drain-t o-Source Volt age (V)

0.01

0.1

1

10

100

-ID, Drain-to-Source Current (A)

-2.5V

20µs PULSE WI D TH

Tj = 25°C

VGS

TOP -10.0V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V

BOTTOM -2.5V

0.1 110 100

-VDS , Drain-t o-Source Volt age (V)

0.01

0.1

1

10

100

-ID, Drain-to-Source Current (A)

-2.5V

20µs PULSE WI D TH

Tj = 150°C

VGS

TOP -10.0V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V

BOTTOM -2.5V

IRF5805

4www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0246810 12 14

0

4

8

12

16

Q , Total Gate Charge (nC)

-V , Gat e-to-Source Voltage (V)

G

GS

I =

D-3.8A

V =-15V

DS

V =-24V

DS

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0 2.5 3.0

-V ,Sour ce-t o-Drain Voltage (V)

-I , Reverse Dr ain Current (A )

SD

V = 0 V

GS

T = 25 C

J°

T = 150 C

J°

0.1

1

10

100

0.1 1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pu lse

T

T = 150 C

= 25 C

°°

J

C

-V , Drai n-to-Source Voltage (V)

-I , Drain Current ( A)I , Drain Curr ent ( A)

DS

D

10us

100us

1ms

10ms

110 100

VDS, Drai n-to-S ource Voltage (V)

0

200

400

600

800

C, Capacitance(pF)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

IRF5805

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150

0.0

1.0

2.0

3.0

4.0

T , Case Tempera ture ( C)

-I , Dr ain Current ( A)

°

C

D

VDS

VGS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

VDD

RG

D.U.T.

+

-

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

0.1

1

10

100

0.00001 0.0001 0.001 0.01 0.1 1 10

Notes:

1 . Duty f actor D = t / t

2. Peak T =P x Z + T

1 2

JDM thJA A

P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response(Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRF5805

6www.irf.com

Fig 13. Typical On-Resistance Vs.

Drain Current

Fig 12. Typical On-Resistance Vs.

Gate Voltage

2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

-VGS, Gat e -to -S ource Voltage (V)

0.050

0.100

0.150

0.200

0.250

0.300

0.350

0.400

0.450

0.500

RDS(on)

, Drain-to -Source On Resistance (

Ω)

ID = -3.8A

0 5 10 15 20

-ID , Drain Current ( A )

0.000

0.100

0.200

0.300

0.400

RDS ( on ) , Drain-to-Source On Resistance (

Ω )

VGS = -4.5V

VGS = -10V

Fig 14b. Gate Charge Test Circuit

Fig 14a. Basic Gate Charge Waveform

QG

QGS QGD

VG

Charge

D.U.T. VDS

ID

IG

-3mA

VGS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

IRF5805

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Fig 15. Typical Vgs(th) Vs.

Junction Temperature

-75 -50 -25 025 50 75 100 125 150

TJ , T em perature ( °C )

1.5

1.7

1.9

2.1

2.3

2.5

-VGS(th) ( V )

ID = -250µA

Fig 16. Typical Power Vs. Time

0.001 0.010 0.100 1.000 10.000 100.000

Time (sec)

0

5

10

15

20

25

30

Power (W)

IRF5805

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TSOP-6 Package Outline

TSOP-6 Tape & Reel Information

IRF5805

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice. 1/03

TSOP-6 Part Marking Information

WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR Y EAR

01

02

03

04

24

WYEAR Y

A2001 1 B2002 2 C2003 3 D2004 4

X

1999 0

WW = (27- 52) IF PRECEDED BY A LETTER

WEEK

27

28

29

30

50

WYEAR

A2001 A B2002 B C2003 C D2004 D

X

J

2005

1996

1997

1998

1999

2000

E

F

G

H

K

Y

2005

1996

1997

1998

2000 9

8

7

6

5

PART NUMBER

TOP

WORK

WEEK

WORK

3A = SI3443DV

PART NUM BER CODE REFERENCE:

25 Y

51 Y

26 Z

3B = IRF5800

3C = IRF5850

3D = IRF5851

3E = IRF5852

3J = IRF5806

3I = IRF5805

DATE

CODE

DATE CODE EXAMPLES:

YWW = 9603 = 6C

YWW = 9632 = FF

WAFER LOT

NUMBER CODE

BOTTOM

EXAMPLE: THIS IS AN SI3443DV

Notes: This p art markin g inform atio n applies to dev ices produc ed be f ore 02/26/2001

50

51

30

27

28

29

WE E K

WORK

W = (27-52) IF PRECEDED BY A LETTER

25

26

24

03

02

04

WE E K

WORK

01

W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEA R

PART NUMBER CODE REFERENCE:

L = IRF5804

M = IRF5803

N = IRF5820

C = IRF5850

J = IRF5806

K = IRF581 0

E = IRF5852

D = IRF5851

I = I R F5 8 05

B = IRF5 800

A = SI3443DV

H1998

2000

1999 K

J

B2002

2005

1996

1997

2003

2004 E

F

G

C

D

2001

YEAR

A

Y

PART NUMBER

TOP

2001 1

Y = YEAR

CODE

LOT

W = WEEK

71997

2000

1999

1998

0

9

8

2004

2005

1996

2002

2003 4

6

5

2

3

YEAR Y

Y

X

B

C

D

A

W

A

X

Z

Y

D

B

C

W

Notes: This part marking information applies to devices produced after 02/26/2001