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use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
AD8014
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: © Analog Devices, Inc.,
400 MHz Low Power
High Performance Amplifier
FUNCTIONAL BLOCK DIAGRAMS
FEATURES
Low Cost
Low Power: 1.15 mA Max for 5 V Supply
High Speed
400 MHz, –3 dB Bandwidth (G = +1)
4000 V/s Slew Rate
60 ns Overload Recovery
Fast Settling Time of 24 ns
Drive Video Signals on 50 ⍀ Lines
Very Low Noise
3.5 nV/√Hz and 5 pA/√Hz
5 nV/√Hz Total Input Referred Noise @ G = +3 w/500 ⍀
Feedback Resistor
Operates on +4.5 V to +12 V Supplies
Low Distortion –70 dB THD @ 5 MHz
Low, Temperature-Stable DC Offset
Available in SOIC-8 and SOT-23-5
APPLICATIONS
Photo-Diode Preamp
Professional and Portable Cameras
Hand Sets
DVD/CD
Handheld Instruments
A-to-D Driver
Any Power-Sensitive High Speed System
PRODUCT DESCRIPTION
The AD8014 is a revolutionary current feedback operational
amplifier that attains new levels of combined bandwidth, power,
output drive and distortion. Analog Devices, Inc. uses a propri-
etary circuit architecture to enable the highest performance
amplifier at the lowest power. Not only is it technically superior,
but is low priced, for use in consumer electronics. This general
purpose amplifier is ideal for a wide variety of applications
including battery operated equipment.
The AD8014 is a very high speed amplifier with 400 MHz,
–3 dB bandwidth, 4000 V/µs slew rate, and 24 ns settling time.
The AD8014 is a very stable and easy to use amplifier with fast
overload recovery. The AD8014 has extremely low voltage and
current noise, as well as low distortion, making it ideal for use
in wide-band signal processing applications.
For a current feedback amplifier, the AD8014 has extremely
low offset voltage and input bias specifications as well as low
drift. The input bias current into either input is less than 15 µA
at +25°C with a typical drift of less than 50 nA/°C over the
industrial temperature range. The offset voltage is 5 mV max
with a typical drift less than 10 µV/°C.
For a low power amplifier, the AD8014 has very good drive
capability with the ability to drive 2 V p-p video signals on
75 Ω or 50 Ω series terminated lines and still maintain more
than 135 MHz, 3 dB bandwidth.
SOIC-8 (R)
1
2
3
4
8
7
6
5
AD8014
NC NC
–IN
–VSNC
+IN
NC = NO CONNECT
VOUT
+VS
SOT-23-5 (RT)
1
VOUT
AD8014
–VS
+IN
2
34
5+VS
–IN
Rev. C
781/461-3113
2010
–2–
AD8014–SPECIFICATIONS
AD8014AR/RT
Parameter Conditions Min Typ Max Units
DYNAMIC PERFORMANCE
–3 dB Bandwidth Small Signal G = +1, V
O
= 0.2 V p-p, R
L
= 1 kΩ400 480 MHz
G = –1, V
O
= 0.2 V p-p, R
L
= 1 kΩ120 160 MHz
–3 dB Bandwidth Large Signal V
O
= 2 V p-p 140 180 MHz
V
O
= 2 V p-p, R
F
= 500 Ω170 210 MHz
V
O
= 2 V p-p, R
F
= 500 Ω, R
L
= 50 Ω130 MHz
0.1 dB Small Signal Bandwidth V
O
= 0.2 V p-p, R
L
= 1 kΩ12 MHz
0.1 dB Large Signal Bandwidth V
O
= 2 V p-p, R
L
= 1 kΩ20 MHz
Slew Rate, 25% to 75%, V
O
= 4 V Step R
L
= 1 kΩ, R
F
= 500 Ω4600 V/µs
R
L
= 1 kΩ2800 V/µs
G = –1, R
L
= 1 kΩ, R
F
= 500 Ω4000 V/µs
G = –1, R
L
= 1 kΩ2500 V/µs
Settling Time to 0.1% G = +1, V
O
= 2 V Step, R
L
= 1 kΩ24 ns
Rise and Fall Time 10% to 90% 2 V Step 1.6 ns
G = –1, 2 V Step 2.8 ns
Overload Recovery to Within 100 mV 0 V to ±4 V Step at Input 60 ns
NOISE/HARMONIC PERFORMANCE
Total Harmonic Distortion f
C
= 5 MHz, V
O
= 2 V p-p, R
L
= 1 kΩ–68 dB
f
C
= 5 MHz, V
O
= 2 V p-p –51 dB
f
C
= 20 MHz, V
O
= 2 V p-p –45 dB
SFDR f
C
= 20 MHz, V
O
= 2 V p-p –48 dB
Input Voltage Noise f = 10 kHz 3.5 nV/√Hz
Input Current Noise f = 10 kHz 5 pA/√Hz
Differential Gain Error NTSC, G = +2, R
F
= 500 Ω0.05 %
NTSC, G = +2, R
F
= 500 Ω, R
L
= 50 Ω0.46 %
Differential Phase Error NTSC, G = +2, R
F
= 500 Ω0.30 Degree
NTSC, G = +2, R
F
= 500 Ω, R
L
= 50 Ω0.60 Degree
Third Order Intercept f = 10 MHz 22 dBm
DC PERFORMANCE
Input Offset Voltage 25mV
T
MIN
–T
MAX
26mV
Input Offset Voltage Drift 10 µV/°C
Input Bias Current +Input or –Input 5 15 µA
Input Bias Current Drift 50 nA/°C
Input Offset Current 5±µA
Open Loop Transresistance 800 1300 kΩ
INPUT CHARACTERISTICS
Input Resistance +Input 450 kΩ
Input Capacitance +Input 2.3 pF
Input Common-Mode Voltage Range ±3.8 ±4.1 V
Common-Mode Rejection Ratio V
CM
= ±2.5 V –52 –57 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing R
L
= 150 Ω±3.4 ±3.8 V
R
L
= 1 kΩ±3.6 ±4.0 V
Output Current V
O
= ±2.0 V 40 50 mA
Short Circuit Current 70 mA
Capacitive Load Drive for 30% Overshoot 2 V p-p, R
L
= 1 kΩ, R
F
= 500 Ω40 pF
POWER SUPPLY
Operating Range ±2.25 ±5±6.0 V
Quiescent Current 1.15 1.3 mA
Power Supply Rejection Ratio ±4 V to ±6 V –55 –58 dB
Specifications subject to change without notice.
(@ TA = +25ⴗC, VS = ⴞ5 V, RL = 150 ⍀, RF = 1 k⍀, Gain = +2, unless otherwise noted)
Rev. C
–3–
AD8014
AD8014AR/RT
Parameter Conditions Min Typ Max Units
DYNAMIC PERFORMANCE
–3 dB Bandwidth Small Signal G = +1, V
O
= 0.2 V p-p, R
L
= 1 kΩ345 430 MHz
G = –1, V
O
= 0.2 V p-p, R
L
= 1 kΩ100 135 MHz
–3 dB Bandwidth Large Signal V
O
= 2 V p-p 75 100 MHz
V
O
= 2 V p-p, R
F
= 500 Ω90 115 MHz
V
O
= 2 V p-p, R
F
= 500 Ω, R
L
= 75 Ω100 MHz
0.1 dB Small Signal Bandwidth V
O
= 0.2 V p-p, R
L
= 1 kΩ10 MHz
0.1 dB Large Signal Bandwidth V
O
= 2 V p-p 20 MHz
Slew Rate, 25% to 75%, V
O
= 2 V Step R
L
= 1 kΩ, R
F
= 500 Ω3900 V/µs
R
L
= 1 kΩ1100 V/µs
G = –1, R
L
= 1 kΩ, R
F
= 500 Ω1800 V/µs
G = –1, R
L
= 1 kΩ1100 V/µs
Settling Time to 0.1% G = +1, V
O
= 2 V Step, R
F
= 1 kΩ24 ns
Rise and Fall Time 10% to 90% 2 V Step 1.9 ns
G = –1, 2 V Step 2.8 ns
Overload Recovery to Within 100 mV 0 V to ±2 V Step at Input 60 ns
NOISE/HARMONIC PERFORMANCE
Total Harmonic Distortion f
C
= 5 MHz, V
O
= 2 V p-p, R
L
= 1 kΩ–70 dB
f
C
= 5 MHz, V
O
= 2 V p-p –51 dB
f
C
= 20 MHz, V
O
= 2 V p-p –45 dB
SFDR f
C
= 20 MHz, V
O
= 2 V p-p –47 dB
Input Voltage Noise f = 10 kHz 3.5 nV/√Hz
Input Current Noise f = 10 kHz 5 pA/√Hz
Differential Gain Error NTSC, G = +2, R
F
= 500 Ω0.06 %
NTSC, G = +2, R
F
= 500 Ω, R
L
= 50 Ω0.05 %
Differential Phase Error NTSC, G = +2, R
F
= 500 Ω0.03 Degree
NTSC, G = +2, R
F
= 500 Ω, R
L
= 50 Ω0.30 Degree
Third Order Intercept f = 10 MHz 22 dBm
DC PERFORMANCE
Input Offset Voltage 25mV
T
MIN
–T
MAX
26mV
Input Offset Voltage Drift 10 µV/°C
Input Bias Current +Input or –Input 5 15 µA
Input Bias Current Drift 50 nA/°C
Input Offset Current 5±µA
Open Loop Transresistance 750 1300 kΩ
INPUT CHARACTERISTICS
Input Resistance +Input 450 kΩ
Input Capacitance +Input 2.3 pF
Input Common-Mode Voltage Range 1.2 1.1 to 3.9 3.8 V
Common-Mode Rejection Ratio V
CM
= 1.5 V to 3.5 V –52 –57 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing R
L
= 150 Ω to 2.5 V 1.4 1.1 to 3.9 3.6 V
R
L
= 1 kΩ to 2.5 V 1.2 0.9 to 4.1 3.8 V
Output Current V
O
= 1.5 V to 3.5 V 30 50 mA
Short Circuit Current 70 mA
Capacitive Load Drive for 30% Overshoot 2 V p-p, R
L
= 1 kΩ, R
F
= 500 Ω55 pF
POWER SUPPLY
Operating Range 4.5 5 12 V
Quiescent Current 1.0 1.15 mA
Power Supply Rejection Ratio 4 V to 5.5 V –55 –58 dB
Specifications subject to change without notice.
(@ TA = +25ⴗC, VS = +5 V, RL = 150 ⍀, RF = 1 k⍀, Gain = +2, unless otherwise noted)
SPECIFICATIONS
Rev. C
AD8014
–4–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8014 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6 V
Internal Power Dissipation
2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . 0.75 W
SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . 0.5 W
Input Voltage Common Mode . . . . . . . . . . . . . . . . . . . . . .±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±2.5 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . .+300°C
ESD (Human Body Model) . . . . . . . . . . . . . . . . . . . . +1500 V
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only, functional operation of the
device at these or any other conditions above listed in the operational section of this
specification is not implied. Exposure to Absolute Maximum Ratings for any
extended periods may affect device reliability.
2
Specification is for device in free air at 25°C.
8-Lead SOIC Package θ
JA
= 155°C/W.
5-Lead SOT-23 Package θ
JA
= 240°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8014
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic. This is approximately +150°C. Even temporarily ex-
ceeding this limit may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the pack-
age. Exceeding a junction temperature of +175°C may result in
device failure.
The output stage of the AD8014 is designed for large load cur-
rent capability. As a result, shorting the output to ground or to
power supply sources may result in a very large power dissipa-
tion. To ensure proper operation it is necessary to observe the
maximum power derating tables.
Table I. Maximum Power Dissipation vs. Temperature
Ambient Temp Power Watts Power Watts
ⴗC SOT-23-5 SOIC
–40 0.79 1.19
–20 0.71 1.06
0 0.63 0.94
+20 0.54 0.81
+40 0.46 0.69
+60 0.38 0.56
+80 0.29 0.44
+100 0.21 0.31
Rev. C
AD8014
–5–
Typical Performance Characteristics–
FREQUENCY – MHz
12
–15 1 100010010
–12
–9
–6
–3
3
6
9
0
G = +1
VO = 200mV p-p
RF = 1kV
RL = 1kV
VS = 65V
VS = +5V
15
NORMALIZED GAIN – dB
Figure 1. Frequency Response, G = +1, V
S
=
±
5 V and +5 V
VS = 65V
G = +2
RF = 500V
VO = 2V p-p
FREQUENCY – MHz
12
–15
1 100010010
–12
–9
–6
–3
3
6
9
0
RL = 50V
RL = 75V
NORMALIZED GAIN – dB
Figure 2. Frequency Response, G = +2, V
O
= 2 V p-p
VS = 65V
G = +2
RF = 1kV
RL = 1kV
FREQUENCY – MHz
12
–12
10 1000
100
0
–9
–6
–3
3
6
9VO = 0.5V p-p
VO = 1V p-p
VO = 4V p-p
VO = 2V p-p
NORMALIZED GAIN – dB
Figure 3. Bandwidth vs. Output Voltage Level—
Dual Supply, G = +2
FREQUENCY – MHz
2.0
–7.0
1 100010010
–6.0
–5.0
–4.0
–3.0
–1.0
0
1.0
–2.0
NORMALIZED GAIN – dB
VS = 65V
G = –1
RF = 1kV
RL = 1kV
VO = 2V
VO = 4V
VO = 0.2V
VO = 0.5V
VO = 1V
Figure 4. Bandwidth vs. Output Level—Gain of –1, Dual
Supply
FREQUENCY – MHz
12
1 100010010
–12
–9
–6
–3
3
6
9
0
NORMALIZED GAIN – dB
VS = +5V
G = +2
RF = 1kV
RL = 1kV
VO = 1V p-p
VO = 3V p-p
VO = 2V p-p
VO = 0.5V p-p
Figure 5. Bandwidth vs. Output Level—Single Supply,
G = +2
FREQUENCY – MHz
2
1 100010010
–8
–7
–5
–4
–2
0
1
–3
–6
–1
NORMALIZED GAIN – dB
VS = +5V
G = –1
RF = 1kV
RL = 1kV
VO = 2V p-p
VO = 0.2V p-p
VO = 4V p-p
VO = 0.5V p-p
Figure 6. Bandwidth vs. Output Level—Single Supply,
Gain of –1
Rev. C
AD8014
–6–
VS = 65V
G = +2
VO = 2V p-p
RL = 150V
FREQUENCY – MHz
7.5
1 100010010
6.5
7.0 RF = 300V
RF = 500V
RF = 600V
RF = 750V
RF = 1kV
6.0
3.0
3.5
4.5
5.0
5.5
4.0
NORMALIZED GAIN – dB
Figure 7. Bandwidth vs. Feedback Resistor—Dual Supply
FREQUENCY – MHz
7.5
1 100010010
7.0
6.5
4.0
4.5
5.5
6.0
5.0
NORMALIZED GAIN – dB
VS = +5V
G = +2
VO = 2V p-p
RL = 150V
RF = 300V
RF = 500V
RF = 750V
RF = 1kV
Figure 8. Bandwidth vs. Feedback Resistor—Single Supply
G = +2
RF = 1kV
RL = 1kV
VO = 200mV p-p
1 100010010
6.1
6.5
6.2
6.6
VS = 65V
VS = +5V
5.6
6.3
6.7
6.8
6.4
FREQUENCY – MHz
NORMALIZED GAIN – dB
6.0
5.7
5.8
5.9
Figure 9. Gain Flatness—Small Signal
G = +2
V = 2V p-p
RF = 500V
RL = 150V
FREQUENCY – MHz
1 100010010
5.3
5.8
5.4
5.9
VS = 65V
VS = +5V
6.2
5.2
5.5
5.6
6.0
6.1
5.7
GAIN FLATNESS – dB
Figure 10. Gain Flatness—Large Signal
VS = ±5V
RF = 1kV
RL = 1kV
VO = 200mV p-p
1 100010010
–15
–3
–12
0
G = +1
G = +2
9
–18
–9
3
6
–6
G = +10
FREQUENCY – MHz
GAIN – dB
Figure 11. Bandwidth vs. Gain—Dual Supply, R
F
= 1 k
Ω
VS = +5V
RF = 1kV
RL = 1kV
VO = 200mV p-p
1 100010010
–15
–3
–12
0
G = +1
G = +2
9
–18
–9
3
6
–6
G = +10
FREQUENCY – MHz
GAIN – dB
Figure 12. Bandwidth vs. Gain—Single Supply
Rev. C
AD8014
–7–
VS = 65V
G = +2
RF = 1kV
FREQUENCY – MHz
0
–100
0.01 1000
–50
0.10 1 10 100
–40
–30
–20
–10
–60
–70
–80
–90
–PSRR
+PSRR
PSRR – dB
Figure 13. PSRR vs. Frequency
FREQUENCY – MHz
–20
0.1 1000
–50
1 10 100
–75
–70
–65
–60
–55
–45
–40
–35
–30
–25
CMRR – dB
VS = +5V
VS = ±5V
Figure 14. CMRR vs. Frequency
FREQUENCY – MHz
–90
1 10010
DISTORTION – dBc
–70
–50
–30
3RD
RL = 150V
3RD
RL = 1kV
DISTORTION BELOW
NOISE FLOOR
2ND
RL = 1kV
2ND
RL = 150V
␣␣
Figure 15. Distortion vs. Frequency; V
S
=
±
5 V, G = +2
140
120
100
80
60
20
0
40
GAIN – dBV
0
PHASE – De
g
rees
–40
–80
–120
–160
–200
–240
–280
1k 10k 100k 1M 10M 100M 1G
FREQUENCY – Hz
PHASE
GAIN
Figure 16. Transimpedance Gain and Phase vs.
Frequency
FREQUENCY – MHz
100
10
1
0.1
0.01
11000
10 1000.1
0.01
OUTPUT RESISTANCE – V
Figure 17. Output Resistance vs. Frequency, V
S
=
±
5 V
and +5 V
Figure 18. Settling Time
Rev. C
AD8014
–8–
Note: On Figures 19 and 20 R
F
= 500 Ω, R
S
= 50 Ω and C
L
=
20 pF.
APPLICATIONS
CD ROM and DVD Photodiode Preamp
High speed Multi-X CD ROM and DVD drives require high
frequency photodiode preamps for their read channels. To mini-
mize the effects of the photodiode capacitance, the low imped-
ance of the inverting input of a current feedback amplifier is
advantageous. Good group delay characteristics will preserve the
pulse response of these pulses. The AD8014, having many ad-
vantages, can make an excellent low cost, low noise, low power,
and high bandwidth photodiode preamp for these applications.
Figure 21 shows the circuit that was used to imitate a photo-
diode preamp. A photodiode for this application is basically a
high impedance current source that is shunted by a small ca-
pacitance. In this case, a high voltage pulse from a Picosecond
Pulse Labs Generator that is ac-coupled through a 20 kΩ resis-
tor is used to simulate the high impedance current source of a
photodiode. This circuit will convert the input voltage pulse into
a small charge package that is converted back to a voltage by the
AD8014 and the feedback resistor.
In this case the feedback resistor chosen was 1.74 kΩ, which is a
compromise between maintaining bandwidth and providing
sufficient gain in the preamp stage. The circuit preserves the
pulse shape very well with very fast rise time and a minimum of
overshoot as shown in Figure 22.
AD8014
1.74kV
20kV
49.9V49.9V
+5V
–5V
OUTPUT
(103 PROBE)
(NO LOAD)
0.1mF
INPUT
Figure 21. AD8014 as a Photodiode Preamp
INPUT
DIV
1
2
OUTPUT
500mV/DIV
CH1 20.0V CH2 500mV M 25.0ns CH4 380mV
TEK RUN: 2.0GS/s ET AVERAGE
T[ ]
Figure 22. Pulse Response
Figure 19. Large Signal Step Response; V
S
=
±
5 V,
V
O
= 4 V Step
Figure 20. Large Signal Step Response; V
S
= +5 V,
V
O
= 2 V Step
Rev. C
20V/
AD8014
–9–
DRIVING CAPACITIVE LOADS
The AD8014 was designed primarily to drive nonreactive loads.
If driving loads with a capacitive component is desired, best
settling response is obtained by the addition of a small series
resistance as shown in Figure 26. The accompanying graph
shows the optimum value for R
SERIES
vs. Capacitive Load. It is
worth noting that the frequency response of the circuit when
driving large capacitive loads will be dominated by the passive
roll-off of R
SERIES
and C
L
.
40
30
20
010152025
CL – pF
10
RSERIES – V
5
Figure 26. Driving Capacitive Load
Choosing Feedback Resistors
Changing the feedback resistor can change the performance of
the AD8014 like any current feedback op amp. The table below
illustrates common values of the feedback resistor and the per-
formance which results.
Table II.
–3 dB BW –3 dB BW
V
O
= ⴞ0.2 V V
O
= ⴞ0.2 V
Gain R
F
R
G
R
L
= 1 k⍀R
L
= 150 ⍀
+1 1 kΩOpen 480 430
+2 1 kΩ1 kΩ280 260
+10 1 kΩ111 Ω50 45
–1 1 kΩ1 kΩ160 150
–2 1 kΩ499 Ω140 130
–10 1 kΩ100 Ω45 40
+2 2 kΩ2 kΩ200* 180*
+2 750 Ω750 Ω260* 210*
+2 499 Ω499 Ω280* 230*
*V
O
= ±1 V.
Video Drivers
The AD8014 easily drives series terminated cables with video
signals. Because the AD8014 has such good output drive you
can parallel two or three cables driven from the same AD8014.
Figure 23 shows the differential gain and phase driving one
video cable. Figure 24 shows the differential gain and phase
driving two video cables. Figure 25 shows the differential gain
and phase driving three video cables.
0.10
0.05
0.00
–0.05
–0.10
0.60
0.40
0.20
–0.20
–0.40
0.00
–0.60
0.00 0.02 0.04 0.05 0.05 0.05 0.04 0.04 0.04 0.04 0.03
0.00 0.01 0.10 0.21 0.26 0.28 0.29 0.30 0.30 0.30 0.30
1ST 2ND 3RD 4TH 5TH 6TH 7TH 8TH 9TH 10TH 11TH
DIFFERENTIAL
PHASE – Degrees DIFFERENTIAL GAIN – %
Figure 23. Differential Gain and Phase R
F
= 500,
±
5 V, R
L
=
150
Ω
, Driving One Cable, G = +2
0.30
0.20
0.10
–0.10
–0.20
0.60
0.40
0.20
–0.20
–0.40
0.00
–0.60
0.00 –0.02 0.03 0.05 0.06 0.06 0.05 0.05 0.07 0.10 0.14
0.00 0.07 0.24 0.40 0.43 0.44 0.43 0.40 0.35 0.26 0.16
1ST 2ND 3RD 4TH 5TH 6TH 7TH 8TH 9TH 10TH 11TH
0.00
–0.30
DIFFERENTIAL
PHASE – Degrees DIFFERENTIAL GAIN – %
Figure 24. Differential Gain and Phase R
F
= 500,
±
5 V, R
L
=
75
Ω
, Driving Two Cables, G = +2
0.60
0.40
0.20
–0.40
–0.60
0.00
–0.80
0.00 0.44 0.52 0.54 0.52 0.52 0.50 0.48 0.47 0.44 0.45
0.00 0.10 0.32 0.53 0.57 0.59 0.58 0.56 0.54 0.51 0.48
1ST 2ND 3RD 4TH 5TH 6TH 7TH 8TH 9TH 10TH 11TH
–0.20
0.80
0.60
0.40
0.20
–0.40
–0.60
0.00
–0.80
–0.20
0.80
DIFFERENTIAL
PHASE – Degrees DIFFERENTIAL GAIN – %
Figure 25. Differential Gain and Phase R
F
= 500,
±
5 V, R
L
=
50
Ω
, Driving Three Cables, G = +2
Rev. C
AD8014
-10- Rev. C
OUTLINE DIMENSIONS
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
COMPLIANT TO JEDEC STANDARDS MS-012-AA
012407-A
0.25 (0.0098)
0.17 (0.0067)
1.27 (0.0500)
0.40 (0.0157)
0.50 (0.0196)
0.25 (0.0099) 45°
8°
0°
1.75 (0.0688)
1.35 (0.0532)
SEATING
PLANE
0.25 (0.0098)
0.10 (0.0040)
4
1
85
5.00 (0.1968)
4.80 (0.1890)
4.00 (0.1574)
3.80 (0.1497)
1.27 (0.0500)
BSC
6.20 (0.2441)
5.80 (0.2284)
0.51 (0.0201)
0.31 (0.0122)
COPLANARITY
0.10
Figure 27. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body (R-8)
Dimensions shown in millimeters and (inches)
COMPLIANT TO JEDEC STANDARDS MO-178-AA
121608-A
10°
5°
0°
SEATING
PLANE
1.90
BSC
0.95 BSC
0.20
BSC
5
123
4
3.00
2.90
2.80
3.00
2.80
2.60
1.70
1.60
1.50
1.30
1.15
0.90
0
.15 MAX
0
.05 MIN
1.45 MAX
0.95 MIN
0.20 MAX
0.08 MIN
0.50 MAX
0.35 MIN
0.55
0.45
0.35
Figure 28. 5-Lead Small Outline Transistor Package [SOT-23]
(RJ-5)
Dimensions shown in millimeters
ORDERING GUIDE
Model
1
Temperature Range Package Description Package Option Branding
AD8014AR −40°C to +85°C 8-Lead SOIC_N R-8
AD8014AR -REEL7 −40°C to +85°C 8-Lead SOIC_N R-8
AD8014ARZ −40°C to +85°C 8-Lead SOIC_N R-8
AD8014ARZ-REEL −40°C to +85°C 8-Lead SOIC_N R-8
AD8014ARZ-REEL7 −40°C to +85°C 8-Lead SOIC_N R-8
AD8014ART-R2 −40°C to +85°C 5-Lead SOT-23 RJ-5 HAA
AD8014ART-REEL7 −40°C to +85°C 5-Lead SOT-23 RJ-5 HAA
AD8014ARTZ-R2 −40°C to +85°C 5-Lead SOT-23 RJ-5 H09
AD8014ARTZ-REEL −40°C to +85°C 5-Lead SOT-23 RJ-5 H09
AD8014ARTZ-REEL7 −40°C to +85°C 5-Lead SOT-23 RJ-5 H09
1
Z = RoHS Compliant Part.
AD8014
Rev. C -11-
REVISION HISTORY
Changes to Figure 22 ........................................................................ 8
Updated Outline Dimensions ........................................................ 10
Changes to Ordering Guide ........................................................... 10
©1998–2010 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D08930-0-4/10(C)
