BYG21K, BYG21M
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Revision: 24-Aug-12 1Document Number: 88961
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Soft recovery characteristic
• Fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.5 A
VRRM 800 V, 1000 V
IFSM 30 A
IR1.0 μA
VF1.6 V
trr 120 ns
ER20 mJ
TJ max. 150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG21K BYG21M UNIT
Device marking code BYG21K BYG21M
Maximum repetitive peak reverse voltage VRRM 800 1000 V
Average forward current IF(AV) 1.5 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load IFSM 30 A
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I(BR)R = 1 A, TJ = 25 °C ER20 mJ
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
BYG21K, BYG21M
www.vishay.com Vishay General Semiconductor
Revision: 24-Aug-12 2Document Number: 88961
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Notes
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu
(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 μm Cu
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYG21K BYG21M UNIT
Maximum instantaneous
forward voltage
IF = 1 A TJ = 25 °C VF (1) 1.5 V
IF = 1.5 A 1.6
Maximum reverse current VR = VRRM
TJ = 25 °C IR
1µA
TJ = 100 °C 10
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 120 ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG21K BYG21M UNIT
Typical thermal resistance, junction to lead, TL = const. RθJL 25 °C/W
Typical thermal resistance, junction to ambient
RθJA (1) 150
°C/WRθJA (2) 125
RθJA (3) 100
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYG21K-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYG21K-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
BYG21KHE3/TR (1) 0.064 TR 1800 7" diameter plastic tape and reel
BYG21KHE3/TR3 (1) 0.064 TR3 7500 13" diameter plastic tape and reel
0.001
0.01
0.1
1
10
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward Voltage (V)
Forward Current (A)
TJ = 150 °C
TJ = 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Ambient Temperature (°C)
Average Forward Current (A)
1007550250 125 150
VR = VRRM
Half Sine-Wave
RθJA = 25 K/W
RθJA = 125 K/W
RθJA = 150 K/W
BYG21K, BYG21M
www.vishay.com Vishay General Semiconductor
Revision: 24-Aug-12 3Document Number: 88961
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Max. Reverse Recovery Charge vs. Forward Current
Fig. 7 - Thermal Response
1
10
100
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperature (°C)
VR = VRRM
0
20
40
60
80
100
120
25 50 75 100 125 150
Reverse Power Dissipation (mW)
Junction Temperature (°C)
V
R
= V
RRM
P
R
- Limit
at 100 % V
R
P
R
- Limit
at 80 % V
R
0
5
10
15
20
25
0.1 1 10 100
f = 1 MHz
Reverse Voltage (V)
Diode Capacitance (pF)
T
A
= 125 °C
0
50
100
150
200
0 0.2 0.4 0.6 0.81.0
Reverse Recovery Charge (nC)
Forward Current (A)
T
A
= 100 °C
T
A
= 25 °C
T
A
= 75 °C
T
A
= 50 °C
I
R
= 0.5 A, i
R
= 0.125 A
1
10
100
1000
Thermal Resistance for Pulse Cond. (K/W)
Pulse Length (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
125 K/W DC
t
p
/T = 0.5
t
p
/T = 0.2
t
p
/T = 0.1
t
p
/T = 0.05
t
p
/T = 0.02
t
p
/T = 0.01
BYG21K, BYG21M
www.vishay.com Vishay General Semiconductor
Revision: 24-Aug-12 4Document Number: 88961
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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