14/8/08 DB91077
'X' SPECIFICATION APPROV ALS
zz
zz
zVDE 0884 in 3 available lead forms : -
- STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The H11D series of optically coupled isolators
consist of infrared light emitting diode and
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.
FEATURES
zOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
zHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
zHigh BVCER ( 300V - H11D1, H11D2 )
( 200V - H11D3, H11D4 )
zAll electrical parameters 100% tested
zCustom electrical selections available
APPLICATIONS
zDC motor controllers
zIndustrial systems controllers
zMeasuring instruments
zSignal transmission between systems of
different potentials and impedances
H11D1X, H11D2X, H11D3X, H11D4X
H11D1, H11D2, H11D3, H11D4
HIGH V OLT AGE OPTICALLY
COUPLED ISOLATOR
PHOTOTRANSIST OR OUTPUT
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage T emperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse V oltage 6V
Power Dissipation 100mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCER (RBE= 1MΩ )
H11D1, H11D2 300V
H11D3, H11D4 200V
Collector-base V oltage BVCBO
H11D1, H11D2 300V
H11D3, H11D4 200V
Emitter-collector V oltage BVECO 6V
Collector Current 100mA
Power Dissipation 150mW
POWER DISSIPATION
T otal Power Dissipation 250mW
(derate linearly 2.67mW/°C above 25°C)
0.26
0.5
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
7.62
6.62
0.5
1
34
6
25
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park V iew Road West,
Park V iew Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England
Tel: (01429)863609 Fax : (01429) 863581 e-mail
sales@isocom.co.uk http://www.isocom.com
10.46
9.86
0.6
0.1 1.25
0.75
Dimensions in mm
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (V F) 1.2 1.5 V IF = 10mA
Reverse Current (IR)10μAV
R = 6V
Output Collector-emitter Breakdown (BVCER )
H11D1, H11D2 300 V IC = 1mA, RBE = 1MΩ
H11D3, H11D4 200 V ( note 2 )
Collector-base Breakdown (BVCBO)
H11D1, H11D2 300 V IC = 100μA
H11D3, H11D4 200 V
Emitter-collector Breakdown (BVECO ) 6 V I
E = 100μA
Collector-emitter Dark Current (ICER )
H11D1, H11D2 100 n A VCE = 200V,RBE=1MΩ
250 μAV
CE= 200V,RBE=1MΩ,
TA=100°C
H11D3, H11D4 100 n A VCE = 100V,RBE=1MΩ
250 μAV
CE= 100V,RBE=1MΩ,
TA=100°C
Coupled Current Transfer Ratio (CTR) 20 % 10mA IF , 10V VCE ,
RBE = 1MΩ
Collector-emitter Saturation VoltageVCE(SAT) 0. 4 V 10mA IF , 0.5mA I C ,
RBE = 1MΩ
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Turn-on Time ton 5 μsV
CC = 10V, IC= 2mA,
Turn-off Time toff 5 μs R
L = 100Ω , fig 1
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
14/8/08
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Output
Output
RL = 100Ω
Input
10%
90% 90%
10%
ton
tr
FIG 1
VCC
toff
tf
DB91077m-AAS/A3
14/8/08
100
Ambient temperature TA ( °C )
300
0
400
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
200
Forward current IF (mA)
70
80
-30 0 25 50 75 100 125
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Ambient Temperature
1 2 5 10 20 50
1.0
10
Relative current transfer ratio
Forward current IF (mA)
0.1
0.01
0.8
1.0
-30 0 25 50 75 100
Ambient temperature TA ( °C )
0
100
200
300
400
500
600
700
0.1 0.2 0.5 1 2 5 10 20 50
0.9
1.1
1.3
1.2
1.4
Forward current IF (mA)
Forward voltage VF (V)
VCE = 10V
RBE = 1MΩ
TA = 25°C
Relative Current Transfer Ratio vs.
Forward Current ( normalised to 10mA IF )
1.6
1.8
2.0
2.2
2.4
-30 0 25 50 75 100
Ambient temperature TA ( °C )
800
Normalised to VCE = 10V ,
IF = 10mA , RBE = 1MΩ ,
TA = 25°C
IF = 20mA
IF = 10mA
IF = 5mA
Collector-base current ICBO (μA)
Collector-base Current vs.
Ambient TemperatureForward Voltage vs. For ward Current
VCB= 10V
IF = 50mA
VCB= 200V
IF = 10mA VCB= 10V
IF = 5mA
VCB= 10V
IF = 10mA
TA = -55°C
TA = +25°C
TA= +100°C
DB91077m-AAS/A3
