GTZ Series for ESD Protection Vishay Semiconductors New Product formerly General Semiconductor Zener Diodes VZ Range 5.1 to 10V Power Dissipation 200mW SOD-323 Mounting Pad Layout .012 (0.3) 0.055 (1.40) Top View 0.062 (1.60) 0.047 (1.20) .065 (1.65) .076 (1.95) .100 (2.55) .112 (2.85) Cathode Band .006 (0.15) max. .004 (0.1) max. .059 (1.5) .043 (1.1) .049 (1.25) max. Dimensions in inches and (millimeters) .010 (0.25) min. Mechanical Data Features Case: SOD-323 Plastic Package Weight: Approx. 0.004g Marking Codes: See table on next page Packaging Codes/Options: D5/10K per 13" reel (8mm tape) D6/3K per 7" reel (8mm tape) * * * * * * Silicon Planar Power Zener Diodes Low Zener impedence and low leakage current Popular in Asian designs Compact surface mount device Ideal for automated mounting Complies with IEC 61000-4-2 for ESD protection Maximum Ratings and Thermal Characteristics (T Parameter A = 25C unless otherwise noted) Symbol Value Unit Power Dissipation Pd 200 mW Junction Temperature Tj 150 C Tstg -55 to + 150 C Storage Temperature Range Document Number 88351 20-May-02 www.vishay.com 1 GTZ Series for ESD Protection Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Type Marking Code (TA = 25C unless otherwise noted) Zener Voltage VZ (V)(1) min max IZT (mA) IR(max) (A) VRT (V) rd(max) () IZT (mA) ESDCapability(2) (kV) (min) Reverse Current Dynamic Resistance GTZ5.1 G1 4.84 5.37 5 5 1.5 130 5 30 GTZ5.6 G2 5.31 5.92 5 5 2.5 80 5 30 GTZ6.2 G3 5.86 6.53 5 2 3.0 50 5 30 GTZ6.8 G4 6.47 7.14 5 2 3.5 30 5 30 GTZ7.5 G5 7.06 7.84 5 2 4.0 30 5 30 GTZ8.2 G6 7.76 8.64 5 2 5.0 30 5 30 GTZ9.1 G7 8.56 9.55 5 2 6.0 30 5 30 GTZ10 G8 9.45 10.55 5 2 7.0 30 5 30 Notes: (1) Tested with pulse (PW = 40ms). (2) C = 150pF, R = 330 ohms, Both forward and reverse direction 10 pulse (contact mode) www.vishay.com 2 Document Number 88351 20-May-02 GTZ Series for ESD Protection Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 2 - VZ vs IZ (GTZ9V1) Fig. 1 - VZ vs IZ (GTZ6V8) 100 100 TJ = 25C TJ = 25C TJ = 85C TJ = 85C 10 TJ = 100C IZ (mA) IZ (mA) 10 TJ = 100C TJ = 150C 1 1 TJ = 150C 0.1 6.6 6.8 7 7.2 0.1 8.6 7.4 8.8 9 9.2 9.4 9.6 9.8 10 10.2 VZ (V) VZ (V) Fig. 3 - RZ vs IZ (GTZ6V8) Fig. 4 - RZ vs IZ (GTZ9V1) 1000 100 100 RZ () RZ () 10 10 TJ = 150C TJ = 100C TJ = 150C 1 TJ = 25C TJ = 100C 1 TJ = 25C 0.1 0.1 0 20 40 60 80 100 0 20 40 IZ (mA) Fig. 5 - VF vs IF (GTZ6V8) Fig. 6 - VF vs IF (GTZ9V1) TJ = 150C TJ = 100C TJ = 85C TJ = 25C 0.1 400 500 600 700 Vf (mV) Document Number 88351 20-May-02 TJ = 150C 10 If (mA) If (mA) 100 100 10 0.01 300 80 IZ (mA) 100 1 60 800 1 TJ = 100C TJ = 85C TJ = 25C 0.1 900 1000 0.01 300 400 500 600 700 800 900 1000 Vf (mV) www.vishay.com 3