1
Transistors
Publication date: January 2003 SJC00113BED
2SC2377
Silicon NPN epitaxial planar type
For high-frequency amplification
Features
Optimum for RF amplification of FM/AM radios
High transition frequency fT
M type package allowing easy automatic and manual insertion
as well as stand-alone fixing to the printed circuit board
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC15 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg 55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Base-emitter voltage VBE VCB = 6 V, IE = 1 mA 720 mV
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 0 100 nA
Collector-emitter cutoff current (Base open)
ICEO VCE = 20 V, IB = 010µA
Emitter-base cutoff current (Collector open)
IEBO VEB = 3 V, IC = 01µA
Forward current transfer ratio *hFE VCB = 6 V, IE = 1 mA 65 260
Transition frequency fTVCB = 6 V, IE = 1 mA, f = 100 MHz 450 650 MHz
Noise figure NF VCB = 6 V, IE = 1 mA, f = 100 MHz 3.3 5.0 dB
Power gain GPVCB = 6 V, IE = 1 mA, f = 100 MHz 20 24 dB
Reverse transfer capacitance Cre VCB = 6 V, IE = 1 mA, f = 10.7 MHz 0.8 1.0 pF
(Common emitter)
Unit: mm
Electrical Characteristics Ta = 25°C ± 3°C
1: Base
2: Collector
3: Emitter
M-A1 Package
6.9
±0.1
2.5
±0.1
(1.0)
(1.0)
(1.5)
(0.85) 0.45
±0.05
0.55
±0.1
(2.5)(2.5)
213
R 0.7
R 0.9
(0.4)
3.5
±0.1
4.5
±0.1
4.1
±0.2
2.4
±0.2
1.25
±0.05
2.0
±0.2
1.0
±0.1
(1.5)
Rank C D
hFE 65 to 160 100 to 260
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
2SC2377
2SJC00113BED
IC VBE VCE(sat) IChFE IC
PC TaIC VCE IC IB
fT IEZrb IECre VCE
0
50
100
150
200
250
02040 8060 140120100 160
Ambient temperature T
a
(°C)
Collector power dissipation P
C
(mW)
0128164
0
12
10
8
6
4
2
T
a
= 25°C
I
B
= 100 µA
20 µA
40 µA
60 µA
80 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0 12080 16040
0
12
10
8
6
4
2
Ta = 25°C
VCE = 10 V
6 V
Base current IB (µA)
Collector current IC (mA)
0 2.01.60.4 1.20.8
0
30
25
20
15
10
5
V
CE
= 6 V
T
a
= 75°C25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0.1 1 10 100
0.01
0.1
1
10
100 IC / IB = 10
Ta = 75°C
25°C
25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
0.1 1 10 100
0
360
300
240
180
120
60
VCE = 6 V
Ta = 75°C
25°C
25°C
Forward current transfer ratio hFE
Collector current IC (mA)
0.1 110 100
0
1 200
1 000
800
600
400
200
Ta = 25°C
VCB = 10 V
6 V
Transition frequency fT (MHz)
Emitter current IE (mA)
0.1 110
0
120
100
80
60
40
20
f = 2 MHz
T
a
= 25°C
V
CE
= 6 V
10 V
Reverse transfer impedance Z
rb
()
Emitter current I
E
(mA)
0.1 1 10 100
0
2.4
2.0
1.6
1.2
0.8
0.4
I
C
= 1 mA
f = 10.7 MHz
T
a
= 25°C
Collector-emitter voltage VCE (V)
Reverse transfer capacitance Cre (pF)
(Common emitter)
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
2SC2377
3
SJC00113BED
Cob VCB GP IENF IE
bie gie bre gre bfe gfe
boe goe
030252051510
0
1.2
1.0
0.8
0.6
0.4
0.2
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
0.1 110 100
0
40
30
10
25
35
20
5
15
f = 100 MHz
Rg = 50
Ta = 25°C
VCE = 10 V
6 V
Power gain GP (dB)
Emitter current IE (mA)
0.1 110 100
0
12
10
8
6
4
2
f = 100 MHz
R
g
= 50 k
T
a
= 25°C
V
CE
= 6 V, 10 V
Noise figure NF (dB)
Emitter current I
E
(mA)
015936 12
0
20
16
12
8
4
18
14
10
6
2
yie = gie + jbie
VCE = 10 V
100
100
2 mA
1 mA
4 mA
7 mA
IE = 0.5 mA
150
f = 10.7 MHz
58
25
58
25
Input conductance g
ie
(mS)
Input susceptance b
ie
(mS)
0.5 0 0.1 0.4 0.2 0.3
6
0
1
2
3
4
5
y
re
= g
re
+ jb
re
V
CE
= 10 V
f = 150 MHz
I
E
= 7 mA
4 mA
1 mA
58
25
100
10.7
Reverse transfer conductance g
re
(mS)
Reverse transfer susceptance b
re
(mS)
0 1008020 6040
120
0
20
40
60
80
100
yfe = gfe + jbfe
VCE = 10 V
IE = 7 mA
4 mA
2 mA
0.4 mA
1 mA
10.7
f = 150 MHz
25
58
58
100
100
100
150
150
Forward transfer conductance g
fe
(mS)
Forward transfer susceptance bfe (mS)
0 0.50.40.1 0.30.2
0
1.2
1.0
0.8
0.6
0.4
0.2
y
oe
= g
oe
+ jb
oe
V
CE
= 10 V
f = 10.7 MHz
I
E
= 0.5 mA
2 mA
4 mA
7 mA
1 mA
58
25
100
150
Output conductance g
oe
(mS)
Output susceptance b
oe
(mS)
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
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Consult our sales staff in advance for information on the following applications:
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Electric Industrial Co., Ltd.
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/