Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol Typ Ma
x
16.7 25
40 50
RθJC 2.5 3
°C
V
V±20
25
A
-12
23
50
Gate-Source Voltage
Drain-Source Voltage -60
Pulsed Drain Current C
-12
-10
-30
Avalanche Current C
Continuous Drain
Current G
Maximum UnitsParameter
TC=25°C
TC=100°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
ID
PDSM
2.5
A
Repetitive avalanche energy L=0.1mH CmJ
Power Dissipation B
TC=25°C PDW
TC=100°C
Maximum Junction-to-Ambient
A
Steady-State °C/W
W
TA=70°C 1.6
Junction and Storage Temperature Range -55 to 175
Power Dissipation A
TA=25°C
Maximum Junction-to-Case BSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s RθJA
°C/W
AOD407
P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -60V
ID = -12A (VGS = -10V)
RDS(ON) < 115mΩ (VGS = -10V)
RDS(ON) < 150mΩ (VGS = -4.5V)
100% UIS tested
100% RG tested
General Description
The AOD407 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
-RoHS Compliant
-Halogen Free*
G
D
S
TO252
DPAK
Top View Bottom View
G
S
D
G
S
D
Alpha & Omega Semiconductor, Ltd.
AOD407
Symbol Min Typ Max Units
BVDSS -60 V
-0.003 -1
TJ=55°C -5
IGSS ±100 nA
VGS(th) -1.5 -2.1 -3 V
ID(ON) -30 A
91 115
TJ=125°C 150
114 150 mΩ
gFS 12.8 S
VSD -0.76 -1 V
IS-12 A
Ciss 987 1185 pF
Coss 114 pF
Crss 46 pF
Rg710Ω
Qg(10V) 15.8 20 nC
Qg(4.5V) 7.4 9 nC
Qgs 3nC
Qgd 3.5 nC
tD(on) 9ns
tr10 ns
tD(off) 25 ns
tf11 ns
trr 27.5 35 ns
Qrr 30 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-12A
Reverse Transfer Capacitance
IF=-12A, dI/dt=100A/µs
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
IDSS µA
Gate Threshold Voltage VDS=VGS ID=-250µA
VDS=-48V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
mΩ
VGS=-4.5V, ID=-8A
IS=-1A,VGS=0V
VDS=-5V, ID=-12A
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-30V, RL=2.5Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=-30V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
VGS=-10V, VDS=-30V, ID=-12A
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Rev 7 : May 2010
Alpha & Omega Semiconductor, Ltd.
AOD407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
2
4
6
8
10
012345
-VGS(Volts)
Figure 2: Transfer Characteristics
-ID(A)
80
100
120
140
160
180
200
220
0 5 10 15 20 25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
-IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=-4.5V
ID=-8A
VGS=-10V
ID=-12A
50
100
150
200
250
300
246810
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VD
S
=-5V
VGS=-4.5V
V
GS
=-10V
ID=-12A
25°C
125°C
0
5
10
15
20
25
30
012345
-VDS (Volts)
Fig 1: On-Region Characteristics
-ID (A)
VGS=-4V
-3.5V
-6V
-7V
-10V
-4.5V
-5V
-3V
Alpha & Omega Semiconductor, Ltd.
AOD407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
2
4
6
8
10
0 4 8 12 16
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS (Volts)
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
ZθJC Normalized Transient
Thermal Resistance
Coss Cr
ss
0.1
1.0
10.0
100.0
0.1 1 10 100
-VDS (Volts)
-ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100µs
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=175°C, TA=25°C
VDS=-30V
ID=-12A
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
T
o
nT
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=175°C
TC=25°C
10
s
Alpha & Omega Semiconductor, Ltd.
AOD407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
ZθJA Normalized Transient
Thermal Resistance
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
T
o
nT
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
6
8
10
12
14
0.00001 0.0001 0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
-ID(A), Peak Avalanche Current
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
Power Dissipation (W)
0
2
4
6
8
10
12
14
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
Current rating -ID(A)
DD
D
A
VBV
IL
t−
⋅
=
TA=25°C
0
10
20
30
40
50
60
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
TA=25°C
Alpha & Omega Semiconductor, Ltd.
AOD407
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Vgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
L
-
+
2
E = 1/2 LIAR
AR
BVDSS
IAR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
trr
-Isd
-Vds
F
-I
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
tt
t
tt
t
90%
10%
r
on
d(off) f
off
d(on)
Alpha & Omega Semiconductor, Ltd.