AOD407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. VDS (V) = -60V ID = -12A (VGS = -10V) RDS(ON) < 115m (VGS = -10V) RDS(ON) < 150m (VGS = -4.5V) 100% UIS tested 100% RG tested -RoHS Compliant -Halogen Free* TO252 DPAK Top View Bottom View D D D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25C Pulsed Drain Current Avalanche Current C C Power Dissipation B Power Dissipation A C TC=25C Units V 20 V TA=25C -10 IAR -12 A EAR 23 mJ -30 50 Junction and Storage Temperature Range 2.5 C -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 1.6 TJ, TSTG t 10s Steady-State Steady-State W 25 PDSM TA=70C A ID IDM PD TC=100C Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Case Maximum -60 -12 TC=100C Repetitive avalanche energy L=0.1mH S S G Continuous Drain G Current G G RJA RJC Typ 16.7 40 2.5 Max 25 50 3 Units C/W C/W C/W AOD407 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250A, VGS=0V -60 VDS=-48V, VGS=0V Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS ID=-250A -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-12A VGS=-4.5V, ID=-8A Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=-5V, ID=-12A DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) -1 -2.1 VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-30V, ID=-12A A 100 nA -3 V A 115 150 114 m 150 m -1 V -12 A 1185 pF 12.8 -0.76 987 VGS=0V, VDS=-30V, f=1MHz Units V 91 TJ=125C gFS Output Capacitance -0.003 -5 VGS(th) Coss Max TJ=55C IGSS IS Typ S 114 pF 46 pF 7 10 15.8 20 nC 7.4 9 nC Qgs Gate Source Charge 3 nC Qgd Gate Drain Charge 3.5 nC tD(on) Turn-On DelayTime 9 ns 10 ns 25 ns 11 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/s VGS=-10V, VDS=-30V, RL=2.5, RGEN=3 IF=-12A, dI/dt=100A/s 27.5 35 30 ns nC A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Rev 7 : May 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOD407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10 -10V 25 -6V -7V VDS=-5V 8 -5V 6 -4.5V 15 -ID(A) -ID (A) 20 VGS=-4V 125C 4 10 25C -3.5V 5 2 -3V 0 0 0 1 2 3 4 0 5 1 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 220 2 180 Normalized On-Resistance 200 RDS(ON) (m) 2 VGS=-4.5V 160 140 VGS=-10V 120 100 VGS=-10V ID=-12A 1.8 1.6 VGS=-4.5V ID=-8A 1.4 1.2 1 0.8 80 0 5 10 15 20 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 300 1.0E+01 ID=-12A 1.0E+00 250 1.0E-01 200 -IS (A) RDS(ON) (m) 125C 150 25C 125C 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 100 1.0E-06 50 0.0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 Ciss VDS=-30V ID=-12A Capacitance (pF) -VGS (Volts) 8 1000 6 4 800 600 400 Coss 2 Crss 200 0 0 0 4 8 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 16 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 200 TJ(Max)=175C, T A=25C RDS(ON) limited 10.0 160 100s 1ms Power (W) -ID (Amps) 10s 10ms 1.0 TJ(Max)=175C TC=25C 120 80 DC 40 0.1 0.1 1 10 100 -VDS (Volts) ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0 0.0001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 tA = 12 L ID BV - V DD Power Dissipation (W) -ID(A), Peak Avalanche Current 14 10 8 TA=25C 50 40 30 20 10 0 6 0.00001 0.0001 0 0.001 25 60 12 50 10 75 100 125 150 175 TA=25C 40 Power (W) Current rating -ID(A) 14 8 6 4 30 20 10 2 0 0 25 75 100 125 150 TCASE (C) Figure 14: Current De-rating (Note B) 10 ZJA Normalized Transient Thermal Resistance 50 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 1 50 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 0 0.001 175 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 Ton 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000 AOD407 G ate Charge Test Circuit & W aveform Vgs Qg -10V + VD C - Qgs Vds Qgd + VD C DUT Vgs Ig C harge Resistive Switching Test Circuit & W aveform s RL Vds t off t on td(on) Vgs VDC - DUT Vgs Rg t d(off) tr tf 90% Vdd + Vgs 10% Vds Unclam ped Inductive Switching (U IS) Test Circuit & W aveform s 2 L E AR = 1/2 LIAR Vds Vds Id VD C - Vgs Vgs + Rg BVD SS Vdd Id I AR D UT Vgs Vgs Diode Recovery Test Circuit & W aveform s Q rr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd VD C - -I F t rr dI/dt -I RM -Vds Vdd