FRFET TM FQPF8N60CF 600V N-Channel MOSFET Features Description * * * * * * These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G TO-220F GD S FQPF Series S Absolute Maximum Ratings Symbol Parameter FQPF8N60CFT 600 V 6.26* A VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25C) IDM Drain Current - Pulsed - Continuous (TC = 100C) (Note 1) Units 3.96* A 25* A VGSS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ IAR Avalanche Current (Note 1) 6.26 A EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25C) 48 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Derate above 25C 0.38 W/C -55 to +150 C 300 C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQPF8N60CF Units RJC Thermal Resistance, Junction-to-Case 2.6 C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 C/W (c)2006 Fairchild Semiconductor Corporation FQPF8N60CF Rev. A 1 www.fairchildsemi.com FQPF8N60CF 600V N-Channel MOSFET February 2006 Device Marking Device Package Reel Size Tape Width Quantity FQPF8N60CFT FQPF8N60CFT TO-220F -- -- 50 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 600 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS/ TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.7 IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 A VDS = 480 V, TC = 125C -- -- 100 A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA VDS = VGS, ID = 250 A 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.13 A gFS Forward Transconductance VDS = 40 V, ID =3.13 A (Note 4) -- 1.25 1.5 -- 8.7 -- S -- 965 1255 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 105 135 pF -- 12 16 pF -- 16.5 45 ns -- 60.5 130 ns -- 81 170 ns -- 64.5 140 ns -- 28 36 nC -- 4.5 -- nC -- 12 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 300 V, ID = 6.26A, RG = 25 (Note 4, 5) VDS = 480 V, ID = 6.26A, VGS = 10 V (Note 4, 5) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 6.26 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 25 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.26 A -- -- 1.4 V trr Reverse Recovery Time -- 82 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 6.26 A, dIF / dt = 100 A/s -- 242 -- nC (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 7.3mH, IAS = 6.26A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 6.26A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature FQPF8N60CF Rev. A 2 www.fairchildsemi.com FQPF8N60CF 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C Notes : 1. VDS = 40V 2. 250s Pulse Test Notes : 1. 250s Pulse Test 2. TC = 25 -1 10 -1 10 -1 0 10 2 1 10 o -55 C 0 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 3.5 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 1 10 3.0 VGS = 10V 2.5 2.0 1.5 VGS = 20V 1.0 0 10 150 Note : TJ = 25 0.5 -1 0 5 10 15 10 20 0.2 0.4 ID, Drain Current [A] 2000 0.8 10 VGS, Gate-Source Voltage [V] Ciss 1200 Coss 1000 800 Notes ; 1. VGS = 0 V 2. f = 1 MHz 600 Crss 400 VDS = 300V 8 VDS = 480V 6 4 2 * Note : ID = 6.26A 0 0 10 1 10 0 5 10 15 20 25 30 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FQPF8N60CF Rev. A 1.4 VDS = 120V 200 0 -1 10 1.2 12 1600 1400 1.0 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1800 0.6 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Capacitance [pF] Notes : 1. VGS = 0V 2. 250s Pulse Test 25 3 www.fairchildsemi.com FQPF8N60CF 600V N-Channel MOSFET Typical Performance Characteristics FQPF8N60CF 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.2 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 3.0 1.1 1.0 0.9 0.8 -100 * Notes : 1. VGS = 0 V 2. ID = 250 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 3.13 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 100 150 200 o Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 8 2 10 Operation in This Area is Limited by R DS(on) 10 s 100 s 1 10 6 1ms ID, Drain Current [A] ID, Drain Current [A] 50 TJ, Junction Temperature [ C] 10ms 100ms 0 10 DC -1 10 * Notes : o 1. TC = 25 C 4 2 o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0 3 10 10 25 50 VDS, Drain-SourceVoltage[V] 75 100 125 150 o TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve D=0.5 0 Z? JC(t), Thermal Response 10 0.2 0.1 0.05 PDM -1 10 0.02 0.01 t1 single pulse -2 10 -5 10 -4 10 -3 10 t2 * Notes : 1. Z? JC(t) = 2.6 ? /W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z? JC(t) -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] FQPF8N60CF Rev. A 4 www.fairchildsemi.com FQPF8N60CF 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQPF8N60CF Rev. A 5 www.fairchildsemi.com FQPF8N60CF 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQPF8N60CF Rev. A 6 www.fairchildsemi.com 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 0 (3 9.75 0.30 MAX1.47 ) #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters FQPF8N60CF Rev. A 7 www.fairchildsemi.com FQPF8N60CF 600V N-Channel MOSFET Mechanical Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) FASTrTM ActiveArrayTM FPSTM BottomlessTM FRFETTM Build it NowTM GlobalOptoisolatorTM CoolFETTM GTOTM CROSSVOLTTM HiSeCTM DOMETM I2CTM EcoSPARKTM i-LoTM E2CMOSTM ImpliedDisconnectTM EnSignaTM IntelliMAXTM FACTTM FACT Quiet SeriesTM Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19