AP18P10GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D Simple Drive Requirement BVDSS -100V RDS(ON) 180m ID Fast Switching Characteristic G -12A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18P10GJ) is available for low-profile applications. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current, VGS @ 10V -12 A ID@TC=100 Continuous Drain Current, VGS @ 10V -10 A 1 IDM Pulsed Drain Current -48 A PD@TC=25 Total Power Dissipation 35.7 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W Data and specifications subject to change without notice 1 200810162 AP18P10GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-1mA -100 - - V VGS=-10V, ID=-8A - - 180 m VGS=-4.5V, ID=-6A - - 210 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS= -10V, ID= -8A - 8 - S IDSS Drain-Source Leakage Current VDS=-80V, VGS=0V - - -10 uA Drain-Source Leakage Current (T j=150 C) VDS=-80V, VGS=0V - - -25 uA Gate-Source Leakage VGS= 20V - - 100 nA ID=-8A - 16 25.6 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-80V - 4.4 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 8.7 - nC VDS=-50V - 9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-8A - 14 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 45 - ns tf Fall Time RD=6.25 - 40 - ns Ciss Input Capacitance VGS=0V - 1590 2550 pF Coss Output Capacitance VDS=-25V - 110 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 8 12 Min. Typ. - - Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage Test Conditions IS=-12A, VGS=0V 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Max. Units -1.3 V IS=-8A, VGS=0V, - 49 - ns dI/dt=-100A/s - 110 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP18P10GH/J 20 40 -10V -7.0V -5.0V -4.5V -ID , Drain Current (A) T C = 25 C 30 -10V -7.0V -5.0V -4.5V T C =150 o C -ID , Drain Current (A) o 20 10 15 10 V G = -3.0V 5 V G = -3.0 V 0 0 0 4 8 12 16 20 0 Fig 1. Typical Output Characteristics 4 6 8 10 Fig 2. Typical Output Characteristics 2.0 300 I D = -8 A T C =25 I D = - 12 A V G = -10V Normalized RDS(ON) 270 RDS(ON) (m ) 2 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) 240 210 1.6 1.2 180 0.8 150 0.4 120 2 4 6 8 -50 10 8 2.0 6 1.5 T j =150 o C 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature Normalized -VGS(th) (V) -IS(A) Fig 3. On-Resistance v.s. Gate Voltage 4 0 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) T j =25 o C 2 0 1.0 0.5 0.0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP18P10GH/J f=1.0MHz 10000 12 V DS = - 80 V ID= -8A C iss 1000 9 C (pF) -VGS , Gate to Source Voltage (V) 15 6 C oss 100 C rss 3 10 0 0 10 20 30 1 40 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 10 Normalized Thermal Response (Rthjc) 1 -ID (A) 100us 1ms 1 10ms 100ms DC o T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0 0.1 1 10 100 1000 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 15 V DS = -5V T j =25 o C -ID , Drain Current (A) 12.5 VG T j =150 o C QG 10 -4.5V QGS 7.5 QGD 5 2.5 Charge Q 0 0 2 4 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 E2 MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 E1 B1 F1 e Millimeters SYMBOLS F 2.20 2.63 3.05 F1 0.5 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 F e 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. R : 0.127~0.381 A2 A3 (0.1mm C Part Marking Information & Packing : TO-252 Part Number Package Code meet Rohs requirement 18P10GH LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 D Millimeters A SYMBOLS c1 D1 E1 E A1 B2 F B1 MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.50 0.69 0.88 B2 0.60 0.87 1.14 c c1 0.40 0.50 0.60 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 5.20 5.35 5.50 E 6.70 7.00 7.30 E1 5.40 5.80 6.20 e ---- 2.30 ---- F 5.88 6.84 7.80 1.All Dimensions Are in Millimeters. c e 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-251 Part Number 18P10GJ YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence 6