1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
1.2 Features
nTypical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 1100 mA:
uAverage output power = 30 W
uPower gain = 17 dB (typ)
uEfficiency = 28.5 %
uIMD3 = −37 dBc
uACPR = −40 dBc
nEasy power control
nIntegrated ESD protection
nExcellent ruggedness
nHigh efficiency
nExcellent thermal stability
nDesigned for broadband operation (2000 MHz to 2200 MHz)
nInternally matched for ease of use
nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G22LS-130
Power LDMOS transistor
Rev. 01 — 23 May 2008 Product data sheet
Table 1. Typical performance
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation f VDS PL(AV) GpηDIMD3 ACPR
(MHz) (V) (W) (dB) (%) (dBc) (dBc)
2-carrier W-CDMA 2110 to 2170 28 30 17 28.5 −37[1] −40[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 23 May 2008 2 of 11
NXP Semiconductors BLF6G22LS-130
Power LDMOS transistor
1.3 Applications
nRF power amplifiers W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 drain
2 gate
3 source [1] 3
2
1
sym112
1
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLF6G22LS-130 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V
IDdrain current - 34 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 225 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-case) thermal resistance from junction to case Tcase =80°C; PL= 30 W 0.43 K/W
BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 23 May 2008 3 of 11
NXP Semiconductors BLF6G22LS-130
Power LDMOS transistor
6. Characteristics
7. Application information
7.1 Ruggedness in class-AB operation
The BLF6G22LS-130 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =28V;
IDq = 1100 mA; PL= 130 W (CW); f = 2170 MHz.
Table 6. Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D= 0.5 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10V;I
D= 180 mA 1.4 1.9 2.4 V
VGSq gate-source quiescent voltage VDS = 28 V;
ID= 1100 mA 1.6 2.1 2.6 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 5 µA
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 26.5 34 - A
IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 450 nA
gfs forward transconductance VDS =10V; I
D=9A - 12 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) + 3.75 V;
ID= 6.3 A - 0.085 0.135 Ω
Crs feedback capacitance VGS =0V; V
DS =28V;
f= 1MHz - 3.15 - pF
Table 7. Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 2112.5 MHz; f
2
= 2122.5 MHz; f
3
= 2157.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 1100 mA; T
case
= 25
°
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PL(AV) average output power - 30 - W
Gppower gain PL(AV) = 30 W 16 17 - dB
RLin input return loss PL(AV) = 30 W - −9−6dB
ηDdrain efficiency PL(AV) = 30 W 25.5 28.5 - %
IMD3 third order intermodulation distortion PL(AV) = 30 W - −37 −34.5 dBc
ACPR adjacent channel power ratio PL(AV) = 30 W - −40 −38 dBc
BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 23 May 2008 4 of 11
NXP Semiconductors BLF6G22LS-130
Power LDMOS transistor
7.2 One-tone CW
VDS = 28 V; IDq = 1100 mA; f = 2170 MHz.
Fig 1. One-tone CW power gain and drain efficiency as functions of load power;
typical values
PL (W)
0 16012040 80
001aai093
15
17
19
Gp
(dB)
13
20
40
60
ηD
(%)
0
Gp
ηD
BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 23 May 2008 5 of 11
NXP Semiconductors BLF6G22LS-130
Power LDMOS transistor
7.3 Two-tone CW
VDS = 28 V; IDq = 1100 mA; f1 = 2169.95 MHz; f2 = 2170.05 MHz.
Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values
VDS = 28 V; IDq = 1100 mA; f1 = 2169.95 MHz;
f2= 2170.05 MHz. VDS = 28 V; f1 = 2169.95 MHz; f2 = 2170.05 MHz.
(1) IDq = 900 mA
(2) IDq = 1000 mA
(3) IDq = 1100 mA
(4) IDq = 1200 mA
(5) IDq = 1300 mA
Fig 3. Intermodulation distortion as a function of
peak envelope load power; typical values Fig 4. Third order intermodulation distortion as a
function of peak envelope load power;
typical values
PL (W)
0 16012040 80
001aai094
15
17
19
Gp
(dB)
13
20
40
60
ηD
(%)
0
Gp
ηD
PL(PEP) (W)
0 250200100 15050
001aai095
−40
−60
−20
0
IMD
(dBc)
−80
IMD3
IMD5
IMD7
PL(PEP) (W)
0 250200100 15050
001aai096
−40
−20
0
IMD3
(dBc)
−60
(1)
(2)
(5)
(3)
(4)
BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 23 May 2008 6 of 11
NXP Semiconductors BLF6G22LS-130
Power LDMOS transistor
7.4 2-carrier W-CDMA
VDS = 28 V; IDq = 1100 mA; f1 = 2157.5 MHz;
f2= 2167.5 MHz; carrier spacing 10 MHz. VDS = 28 V; IDq = 1100 mA; f1 = 2169.95 MHz;
f2= 2170.05 MHz.
Fig 5. 2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
Fig 6. 2-carrier W-CDMA adjacent channel leakage
ratio and IMD3 as functions of average load
power; typical values
PL (W)
0504020 3010
001aai098
17
15
19
21
Gp
(dB)
13
20
10
30
40
ηD
(%)
0
Gp
ηD
PL(AV) (W)
0403010 20
001aai102
−40
−60
−20
0
ACPR,
IMD3
(dBc)
−80
IMD3
ACPR
BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 23 May 2008 7 of 11
NXP Semiconductors BLF6G22LS-130
Power LDMOS transistor
8. Test information
[1] American Technical Ceramics type 100B or capacitor of same quality.
The striplines are on a Rogers RO4350B Printed-Circuit Board (PCB) with εr= 3.48 and thickness = 0.762 mm.
See Table 8 for list of components.
Fig 7. Component layout for 2110 MHz to 2170 MHz test circuit for 2-carrier W-CDMA
001aai108
INPUT PCB V1 OUTPUT PCB V2
C1 C2
C4
C5
R2
R1
C6
C17
C16
C3
C7 C8 C9
C10 C11
C13 C14 C15
C12
Table 8. List of components (see Figure 7)
All capacitors should be soldered vertically.
Component Description Value Remarks
C1 multilayer ceramic chip capacitor 3.6 pF [1]
C2 multilayer ceramic chip capacitor 0.3 pF [1]
C3 multilayer ceramic chip capacitor 1.2 pF [1]
C4 multilayer ceramic chip capacitor 4.7 pF TDK C4532X7R1E475M t020U or equivalent
C5, C7, C10 multilayer ceramic chip capacitor 100 nF Murata GRM217BR71H104KA11L or equivalent
C6, C8, C11 multilayer ceramic chip capacitor 15 pF [1]
C9, C12 multilayer ceramic chip capacitor 220 nF AVX12065C224K
C13 multilayer ceramic chip capacitor 1.3 pF [1]
C14 multilayer ceramic chip capacitor 1.4 pF [1]
C15 multilayer ceramic chip capacitor 24 pF [1]
C16 tantalum capacitor 10 µF
C17 electrolytic capacitor 220 µF; 35 V
R1 chip resistor 4.7 ΩSMD 0603
R2 chip resistor 2.7 ΩSMD 0603
BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 23 May 2008 8 of 11
NXP Semiconductors BLF6G22LS-130
Power LDMOS transistor
9. Package outline
Fig 8. Package outline SOT502B
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502B 03-01-10
07-05-09
0 5 10 mm
scale
Earless flanged LDMOST ceramic package; 2 leads SOT502B
AF
b
D
U2
L
H
Q
c
1
3
2
D1
E
D
U1
D
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25
w2
F
1.14
0.89
U1
20.70
20.45
L
5.33
4.32
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.010
0.045
0.035 0.815
0.805
0.210
0.170 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 23 May 2008 9 of 11
NXP Semiconductors BLF6G22LS-130
Power LDMOS transistor
10. Abbreviations
11. Revision history
Table 9. Abbreviations
Acronym Description
3GPP Third Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
DPCH Dedicated Physical CHannel
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
PAR Peak-to-Average power Ratio
PDPCH transmission Power of the Dedicated Physical CHannel
RF Radio Frequency
SMD Surface Mounted Device
VSWR Voltage Standing-Wave Ratio
W-CDMA Wideband Code Division Multiple Access
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF6G22LS-130_1 20080523 Product data sheet - -
BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 23 May 2008 10 of 11
NXP Semiconductors BLF6G22LS-130
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BLF6G22LS-130
Power LDMOS transistor
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 May 2008
Document identifier: BLF6G22LS-130_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 3
7.2 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.3 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
