MITSUBISHI TRANSISTOR MODULES QM300HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2HB * * * * * IC Collector current ........................ 300A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 7.5 4-R6.5 4-6.5 930.25 16 16 E C B 14 9 BX 3 18.5 62 480.25 E 16 8 9 14 10 10 7 9 29 25 BX C 2-M6 41 35+1 - 0.5 LABEL 7 24.5+1 - 0.5 3-M4 E B E Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 1000 V VCEX Collector-emitter voltage VEB=2V 1000 V VCBO Collector-base voltage Emitter open 1000 V VEBO Emitter-base voltage Collector open IC Collector current DC -IC Collector reverse current DC (forward diode current) 300 A PC Collector dissipation TC=25C 1980 W IB Base current DC 16 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 3000 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M6 Mounting screw M6 -- Mounting torque B(E) terminal screw M4 BX terminal screw M4 -- Typical value Weight ELECTRICAL CHARACTERISTICS 7 V 300 A 2500 V 1.96~2.94 N*m 20~30 kg*cm 1.96~2.94 N*m 20~30 kg*cm 0.98~1.47 N*m 10~15 kg*cm 0.98~1.47 N*m 10~15 kg*cm 470 g (Tj=25C, unless otherwise noted) Limits Symbol Parameter Test conditions Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V -- -- 4.0 mA ICBO Collector cutoff current VCB=1000V,Emitter open -- -- 4.0 mA IEBO Emitter cutoff current VEB=7V, Collector open -- -- 200 mA VCE (sat) Collector-emitter saturation voltage -- -- 4.0 V VBE (sat) Base-emitter saturation voltage -- -- 4.0 V -VCEO Collector-emitter reverse voltage IC=-300A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=300A, VCE=4.0V 750 -- -- -- -- -- 2.5 s Switching time VCC=600V, IC=300A, IB1=600mA, -IB2=6.0A -- -- 15 s -- -- 3.0 s Transistor part -- -- 0.063 C/ W Diode part -- -- 0.3 C/ W Conductive grease applied -- -- 0.04 C/ W IC=300A, IB=400mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 500 IB=400mA DC CURRENT GAIN hFE IB=200mA 400 IB=100mA 300 IB=50mA 200 100 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 0 7 5 4 3 2 3.2 3.6 4.0 4.4 BASE-EMITTER VOLTAGE 10 3 7 5 4 3 2 4.8 101 7 5 4 3 2 2 ton, ts, tf (s) IC=100A 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) IB=400mA Tj=25C Tj=125C 10-1 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) IC=200A VBE(sat) COLLECTOR CURRENT IC (A) 5 IC=300A 2 3 4 5 7 10 3 VCE(sat) 10 0 7 5 4 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 3 2 3 4 5 7 10 2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VBE (V) 4 Tj=25C Tj=125C COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=4.0V Tj=25C 10 -1 2.8 VCE=4V VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 4 7 5 4 3 2 10 2 10 1 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25C 10 2 7 VCC=600V 5 IB1=0.6A 3 -IB2=6.0A 2 10 1 7 5 3 2 ts 10 0 7 tf 5 t on 3 2 10 -1 10 1 2 3 4 5 7 10 2 Tj=25C Tj=125C 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE 10 2 7 5 3 2 600 VCC=600V IC=300A IB1=0.6A ts 10 1 7 5 3 2 REVERSE BIAS SAFE OPERATING AREA COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) SWITCHING TIME VS. BASE CURRENT (TYPICAL) tf 10 0 7 5 3 2 10 -1 10 0 Tj=25C Tj=125C 2 3 4 5 7 10 1 500 400 300 200 100 0 2 3 4 5 7 10 2 BASE REVERSE CURRENT -IB2 (A) 400 100S 80 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 DERATING FACTOR (%) 90 10 2 7 5 3 2 800 1000 1200 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 0.06 0.05 0.04 0.03 0.02 0.01 0 10 -3 2 3 5 7 10 -2 2 3 5 710 -1 2 3 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) 0.07 VCE (V) SECOND BREAKDOWN AREA VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 7 10 1 0.08 TIME (s) 600 DERATING FACTOR OF F. B. S. O. A. 50S S 200 S DC 1m COLLECTOR CURRENT IC (A) 200 100 COLLECTOR-EMITTER VOLTAGE Zth (j-c) (C/ W) 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 Tj=125C IB2=-6A 10 3 7 5 4 3 2 TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 10 2 7 5 4 3 2 10 1 0.2 0.6 1.0 1.4 1.8 2.2 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 3200 2800 Irr (A), Qrr (c) 2400 2000 1600 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 3 7 5 4 3 2 10 1 VCC=600V IB1=0.6A -IB2=6.0A 10 2 7 5 4 3 2 10 1 10 1 7 5 4 3 2 Irr trr (s) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 0 Qrr trr 2 3 4 5 7 10 2 7 5 4 3 2 Tj=25C Tj=125C 10 -1 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 57 10 1 2 3 4 5 7 0.40 Zth (j-c) (C/ W) 0.32 0.24 0.16 0.08 0 10 -3 2 3 5 7 10 -2 2 3 5 710 -1 2 3 5 7 10 0 TIME (s) Feb.1999