Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 1 of 9 April 2010
CV211-2A
UMTS/WiMax-band Dual-Branch Downconverter
Product Features
• High dynamic range downconverter
with integrated LO and IF amplifiers
• Dual channels fo r di versity
• +30 dBm Input IP3
• +12.5 dBm Input P1dB
• RF: 1900 – 2700 MHz
• IF: 65 – 300 MHz
• +5V Single supply op er a tion
• Pb-free 6mm 28-pin QFN package
• Low-side LO configuration
• Comm on foot p ri nt wi t h ot her
PCS/cellular versions
Product Description
The CV211-2A is a dual-channel high-linearity down-
converter designed to meet the demanding performance,
functionality, and cost goals of current and next generation
mobile infrastructure basestations. It provides high
dynamic range perform ance in a low prof ile surface-mount
leadless package that measures 6 x 6 mm square.
It is ideally suited for high dynamic range receiver front
ends using diversity receive channels. Functionality
includes frequency conversion and IF amplification,
while an integrated LO driver amplifier powers the
passive mixer. The MCM is implemented with reliable
and mature GaAs MESFET and InGaP HBT technology.
Typical applications include frequency downconversion
used in W-CDMA 3G and WiMax mobile base
transceiver stations.
Functional Diagram
Top View
Specifications (1)
Parameters Units Min Typ Max Min Typ Max Comments
RF Frequency Range MHz 1900 – 2200
1600 – 2135
65 – 300
±7.5
2500 – 2700
2200 – 2565
135 – 300
±12
LO Frequency Range MHz
IF Frequency Range MHz See note 2
% Bandwidth aro und IF center freq uency % See note 3
IF Test Fr equency MHz 240
155
SSB Conversion Gain dB 8 10 12 8 10 12 Temp = 25 °C
Gain Drift over Temp (-40 to 85 °C) dB -1.5 ±0.6 +1.5 -1.5 ±0.6 +1.5 Referenced to +25 °C
Input IP3 dBm +25 +30 +17
+22 See note 4
Input IP2 dBm +33 +37 +33
+37 See note 4
Input 1 dB Compression Point dBm +12.5
+7.0 See note 4
Noise Figure dB 11
12 See note 5
LO Input Drive Level dBm -2.5 0 +2.5 -2.5 0 +2.5
LO-RF Isolation dB 12
9 P
LO = 0 dBm
LO-IF Isolation dB 26
17 P
LO = 0 dBm
Branch-Branch Isolation dB 44
40
Return Loss: RF Port dB 15
14
Return Loss: LO Port dB 18
12
Return Loss: IF Port dB 14
10
Operating Supply Voltage V +5
+5
Supply Current mA 320 380 475 320 380 475
Thermal Resistance °C / W 27 27
Junction Temperature °C 160 160 See note 6
1. Specifications when using the application specific circuit (shown on page 3) with a low side LO = 0 dBm and IF = 240 MHz in a downconverting application at 25 °C.
2. IF matching components affect the center IF frequency. Proper component values for other IF center frequencies than shown can be provided by emailing to applications.engineering@wj.com.
3. The IF bandwidth of the converter is defined as 15% around any center frequency in its operating IF frequency range. The bandwidth is determined with external components. Specifications are valid around
the total ±7.5% bandwidth. ie. with a center frequency of 240 MHz, the specifications are valid from 240 ± 18 MHz.
4. Assumes the supply voltage = +5 V. IIP3 is measured with Δf = 1 MHz with RFin = -5 dBm / tone.
5. Assumes LO injection noise is filtered at the thermal noise floor, -174 dBm/Hz, at the RF, IF, and Image frequencies.
6. The maximum junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
Absolute Maximum Rating
Parameter Rating
Operating Case Temperature -40 to +85 °C
Storage Temperature -55 to +150 °C
DC Voltage +5.5 V
Junction Temperature +220 °C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No. Description
CV211-2AF UMTS/WiMax-band Dual-Branch Dwncvtr.
(lead-free/RoHS-compliant 6x6mm QFN package)
CV211-2APCB75 Fully Assembled Eval. Board, IF = 75MHz
CV211-2APCB240 Fully Assembled Eval. Board, IF = 240MHz
1
2
3
4
5
6
7
21
20
19
18
17
16
15
28
27 26 25 24 23 22
8 9 10 11 12 13 14
IF Amp 2
IF Amp 1
LO Driver Amp
BIAS
GND
GND
GND
LO
GND
GND
RF 1
INPUT
GND
BIAS
GND
GND
GND
GND
MIXER
IF1
GND
A
MP1
INPUT
GND
GND
GND
MIXER
IF2
GND
GND
GND
IF
AMP2
INPUT
IF1
OUTPUT
IF2
OUTPUT
IF
RF
RF
RF 2
INPUT
Specifications and information are subject to change without notice
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CV211-2A
UMTS/WiMax-band Dual-Branch Downconverter
Device Architecture / Application Circuit Information
Typical Downconverter Performance Chain Analysis (Each Branch)
Stage Gain
(dB)
Input
P1dB
(dBm)
Input
IP3
(dBm)
NF
(dB) Current
(mA)
Cumulative Performance
Gain
(dB)
Input
P1dB
(dBm)
Input
IP3
(dBm)
NF
(dB)
LO Am p / M MIC Mi x er -8.7 20 35 9.0 80 -8.7 20.0 35 9
IF Amplifier 18.7 4.6 23 2.1 150 10.0 12.5 30 11
CV211-2A Cumulative Performance 380* 10.0 12.5 30 11
* The 2nd branch includes another mixer and IF amplifier, which increases the total current consumption
of the MCM to be 380 mA.
CV211
-
2
A
: The applicatio n circuit can be b roken up into three main func tions
as denoted in the colored dotted areas above: RF/IF diplexing (blue), IF
amplifier matching (green), and dc biasing (purple). There are various
placeholders for chip components in the circuit schematic so that a common
PCB can be used for all WJ dual-branch converters. Further details are given in
the Application Note located on the website titled “CV2xx Series - PWB
Design Guidelines”.
External Diplexer: This is only used with the cellular-
band CV products. The mixer performs the diplexing
internally for the CV211-2A; therefore the components
shown in the diplexer section should be not be loaded
except for L3, L10, L7, and L11, which should contain a
0 Ω jumper.
IF Amplifier Matching: The IF amplifier requires matching elements to
optimize the performance of the amplifier to the desired IF center
frequency. Since IF bandwidths are typically on the order of 5 to 10%, a
simple two element matching network, in the form of either a high-pass or
low-pass filter structure, is sufficient to match the MMIC IF amplifier over
these narrow bandwidths. Proper component values for other IF center
frequencies can be found in the IF Amplifier Matching Table or by e-mailing
to sjcapplication.engineering@tqs.com.
DC biasing: DC bias must be provide d for the LO and IF
amplifiers in the converter. R1 sets the operating current
for the last stage of the LO amplifier and is chosen to
optimize the mixer LO drive leve l. Proper RF chokes and
bypass capacitors are chosen for proper ampli fier biasing at
the intended frequency of operation. The “+5 V” dc bias
should be supplied directly from a voltage regulator.
IF Amplifier Matching
Frequency (MHz) 40 50 75 100 125 130 155 169 180 210 240
L8, L4 (nH) 470 430 150 150 120 120 100 82 82 82 56
C4, C11 (pF) 24 15 22 10 8.2 6.8 5.6 5.0 4.7 3.3 3.9
R6, R7 (ohms) 4.7 4.7 3.3 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2
L5, L9 (nH) 470 240 330 330 330 330 330 330 330 220 220
Printed Circuit Board Material:
.014” FR-4
,
4 la
y
ers
,
.062” total thickness
1
2
3
4
5
6
7
21
20
19
18
17
16
15
28
27 26 25 24 23 22
8 9 10 11 12 13 14
IF Amp 2
IF Amp 1
LO Driver Amp
BIAS
GND
N/C
GND
LO
GND
N/C
RF 1
INPUT
GND
BIAS
GND
N/C
GND
GND
MIXER
IF1
GND
A
MP1
INPUT
GND
GND
GND
MIXER
IF2
GND
GND
GND
IF
AMP2
INPUT
IF1
OUTPUT
IF2
OUTPUT
IF
RF
RF
RF 2
INPUT
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 3 of 9 April 2010
CV211-2A
UMTS/WiMax-band Dual-Branch Downconverter
Application Circuit: IF = 75 MHz (CV211-2APCB75)
RF = 1900 – 2200 MHz, IF = 75 MHz
PCB Layout
Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness
Bill of Materials
Ref. Desig. Component Size
R1 11.3 Ω chip resistor 0805
R2, R3, R4, L3, L7
L10, L11 0 Ω chip resistor 0603
R6, R7 3.3 Ω chip resistor 0603
C1, C5, C10, C15 1000 pF chip capacitor 0603
C4, C11 22 pF chip capacitor 0603
C6, C12, C14 0.1 μF chip capacitor 0603
C7, C13 100 pF chip capacitor 0603
L1 120 nH chip inductor 0603
L4, L8 150 nH chip inductor 0603
L5, L9 220 nH chip induct or 0805
C2, C3, C8, C9, C16
C17, C19, C20, C21
C22, L2, L6
Shown on silkscreen, but
not used in actual circuit.
U1 CV211-2A W J Converter QFN
0.1uF
0.1uF
0.1uF
Specifications and information are subject to change without notice
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CV211-2A
UMTS/WiMax-band Dual-Branch Downconverter
CV211-2APCB75 Application Circuit Performance Plots
Conversion G ain vs IF Frequency
LO = 0 dBm , LO = 1875 M Hz, low-side LO
6
7
8
9
10
11
65 70 75 80 85
IF Frequency (M Hz)
Conversion Gain (dB)
-40° C +25° C +85° C
Input IP 3 vs IF Frequency
LO = 0 dBm , LO = 1875 M Hz, low-side LO
22
24
26
28
30
32
65 70 75 80 85
IF Frequency (M Hz)
Input IP3 (dBm)
-40° C +25° C +85° C
Input IP 2 vs IF Frequency
LO = 0 dBm , LO = 1875 M Hz, low-side LO
30
32
34
36
38
40
65 70 75 80 85
IF Frequency (M Hz)
Input IP2 (dBm)
-40° C +25° C +85° C
Conversion G ain vs RF Frequency
25° C, IF = 75 M Hz, low -side LO
6
7
8
9
10
11
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Conversion Gain (dB)
L O = -2 .5 d Bm
LO = 0 dBm
LO = 2.5 dBm
Input IP3 vs RF Frequency
2 5 ° C, IF = 7 5 MH z , low-s id e L O
22
24
26
28
30
32
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Input IP3 (dBm)
L O = -2 .5 d Bm
LO = 0 dBm
LO = 2.5 dBm
Input IP2 vs RF Frequency
2 5 ° C, IF = 7 5 MH z , low-s id e L O
30
32
34
36
38
40
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Input IP2 (dBm)
L O = -2 .5 d Bm
LO = 0 dBm
LO = 2.5 dBm
Conversion G ain vs RF Frequency
L O = 0 d Bm, IF = 7 5 MH z, lo w-s id e L O
6
7
8
9
10
11
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Conversion Gain (dB)
-40° C +25° C +85° C
In p ut IP 3 v s R F Fre q ue n c y
LO = 0 dBm , IF = 75 M H z, low-side LO
22
24
26
28
30
32
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Input IP3 (dBm)
-40° C +25° C +85° C
Input IP 2 vs RF Frequency
LO = 0 dBm , IF = 75 M H z, low-side LO
30
32
34
36
38
40
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Input IP2 (dBm)
-40° C +25° C +85° C
Conversion G ain vs RF Frequency
25° C, LO = 0 dBm , IF = 75 MHz, low -side LO
6
7
8
9
10
11
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M Hz)
Conversion Gain (dB)
Vdd = 4.9 V
Vdd = 5.0 V
Vdd = 5.1 V
In p ut IP 3 v s R F Fre q ue n c y
25° C, LO = 0 dBm , IF = 75 MHz, low -side LO
22
24
26
28
30
32
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M Hz)
Input IP3 (dBm)
Vdd = 4.9 V
Vdd = 5.0 V
Vdd = 5.1 V
Input IP 2 vs RF Frequency
25° C, LO = 0 dBm , IF = 75 MHz, low -side LO
30
32
34
36
38
40
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M Hz)
Input IP2 (dBm)
Vdd = 4.9 V
Vdd = 5.0 V
Vdd = 5.1 V
Specifications and information are subject to change without notice
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CV211-2A
UMTS/WiMax-band Dual-Branch Downconverter
CV211-2APCB75 Application Circuit Performance Plots (cont’d)
L-R Isolation vs LO Frequency
Referenced w ith LO = 0 dB m
0
5
10
15
20
25
1600 1700 1800 1900 2000 2100 2200
LO Frequency (MH z)
L-R Isolation (dB)
-40° C +25° C +85° C
L-I Isolation vs LO Frequency
R e fe re nc e d w ith L O = 0 d B m
5
10
15
20
25
30
1600 1700 1800 1900 2000 2100 2200
LO Frequency (MH z)
L-I Isolation (dB)
-40° C +25° C +85° C
Branch-B ranch Isolation vs RF Frequency
25° C
0
10
20
30
40
50
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Isolation (dB)
IF R eturn Loss vs RF Frequency
25° C
0
5
10
15
20
25
3065 70 75 80 85
IF Frequency (M Hz)
Return Loss (dB)
RF R eturn Loss vs RF Frequency
25° C
0
5
10
15
20
25
30
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Return Loss (dB)
LO R eturn Loss vs LO Frequency
25° C
0
10
20
30
40
1600 1700 1800 1900 2000 2100 2200
LO Frequency (MH z)
Return Loss (dB)
N oise Figure vs Temperature
RF = 1950 M H z, IF = 75 M Hz, LO = 0 dBm @ 1875 M Hz
4
6
8
10
12
14
-40-200 20406080
Tem perature (°C)
Noise Figure (dB)
Input P1dB vs Tem p erature
RF = 1950 M H z, IF = 75 M Hz, LO = 0 dBm @ 1875 M Hz
4
6
8
10
12
14
-40-200 20406080
Tem perature (°C)
Input P1dB (dBm)
Specifications and information are subject to change without notice
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CV211-2A
UMTS/WiMax-band Dual-Branch Downconverter
Application Circuit: IF = 240 MHz (CV211-2APCB240)
RF = 1900 – 2200 MHz, IF = 240 MHz
PCB Layout
Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness
Bill of Materials
Ref. Desig. Component Size
R1 11.3 Ω chip resistor 0805
R2, R3, R4, L3, L7
L10, L11 0 Ω chip resistor 0603
R6, R7 2.2 Ω chip resistor 0603
C1, C5, C10, C15 1000 pF chip capacitor 0603
C4, C11 3.9 pF chip capacitor 0603
C6, C12, C14 0.1 μF chip capacitor 0603
C7, C13 100 pF chip capacitor 0603
L1 120 nH chip inductor 0603
L4, L8 56 nH chip inductor 0603
L5, L9 220 nH chip induct or 0805
C2, C3, C8, C9, C16
C17, C19, C20, C21
C22, L2, L6
Shown on silkscreen, but
not used in actual circuit.
U1 CV211-2A W J Converter QFN
0.1uF
0.1uF
0.1uF
Specifications and information are subject to change without notice
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CV211-2A
UMTS/WiMax-band Dual-Branch Downconverter
CV211-2APCB240 Application Circuit Performance Plots
Conversion G ain vs IF Frequency
LO = 0 dBm , LO = 1710 M Hz, low-side LO
7
8
9
10
11
12
215 225 235 245 255 265
IF Frequency (M Hz)
Conversion Gain (dB)
-40° C +25° C +85° C
Input IP 3 vs IF Frequency
LO = 0 dBm , LO = 1710 M Hz, low-side LO
24
26
28
30
32
34
215 225 235 245 255 265
IF Frequency (M Hz)
Input IP3 (dBm)
-40° C +25° C +85° C
Input IP 2 vs IF Frequency
LO = 0 dBm , LO = 1710 M Hz, low-side LO
32
34
36
38
40
42
215 225 235 245 255 265
IF Frequency (M Hz)
Input IP2 (dBm)
-40° C +25° C +85° C
Conversion G ain vs RF Frequency
2 5 ° C, IF = 2 4 0 M Hz, lo w-s id e L O
7
8
9
10
11
12
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Conversion Gain (dB)
L O = -2 .5 d Bm
LO = 0 dBm
LO = 2.5 dBm
Input IP3 vs RF Frequency
25° C, IF = 240 M H z, low-side L O
24
26
28
30
32
34
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Input IP3 (dBm)
L O = -2 .5 d Bm
LO = 0 dBm
LO = 2.5 dBm
Input IP2 vs RF Frequency
25° C, IF = 240 M H z, low-side L O
32
34
36
38
40
42
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Input IP2 (dBm)
L O = -2 .5 d Bm
LO = 0 dBm
LO = 2.5 dBm
Conversion G ain vs RF Frequency
L O = 0 d B m, IF = 2 4 0 MH z, lo w-s id e L O
7
8
9
10
11
12
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Conversion Gain (dB)
-40° C +25° C +85° C
Input IP 3 vs RF Frequency
LO = 0 dBm , IF = 240 M H z, low-side LO
24
26
28
30
32
34
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Input IP3 (dBm)
-4 0 ° C +25° C +85° C
Input IP 2 vs RF Frequency
LO = 0 dBm , IF = 240 M H z, low-side LO
32
34
36
38
40
42
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Input IP2 (dBm)
-40° C +25° C +85° C
Conversion Gain vs RF Frequency
25° C, LO = 0 dB m , IF = 240 MH z, low -side LO
7
8
9
10
11
12
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M Hz)
Conversion Gain (dB)
Vdd = 4.9 V
Vdd = 5.0 V
Vdd = 5.1 V
Input IP 3 vs RF Frequency
25° C, LO = 0 dB m , IF = 240 MH z, low -side LO
24
26
28
30
32
34
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M Hz)
Input IP3 (dBm)
Vdd = 4.9 V
Vdd = 5.0 V
Vdd = 5.1 V
Input IP 2 vs RF Frequency
25° C, LO = 0 dB m , IF = 240 MH z, low -side LO
32
34
36
38
40
42
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M Hz)
Input IP2 (dBm)
Vdd = 4.9 V
Vdd = 5.0 V
Vdd = 5.1 V
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 8 of 9 April 2010
CV211-2A
UMTS/WiMax-band Dual-Branch Downconverter
CV211-2APCB240 Application Circuit Performance Plots (cont’d)
L-R Isolation vs LO Frequency
Referenced w ith LO = 0 dB m
0
5
10
15
20
25
1500 1600 1700 1800 1900 2000 2100
LO Frequency (MH z)
L-R Isolation (dB)
-40° C +25° C +85° C
L-I Isolation vs LO Frequency
R e fe re nc e d w ith L O = 0 d B m
15
20
25
30
35
40
1500 1600 1700 1800 1900 2000 2100
LO Frequency (MH z)
L-I Isolation (dB)
-40° C +25° C +85° C
Branch-B ranch Isolation vs RF Frequency
25° C
0
10
20
30
40
50
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Isolation (dB)
IF R eturn Loss vs IF Frequency
25° C
0
5
10
15
20
25
30215 225 235 245 255 265
IF Frequency (M Hz)
Return Loss (dB)
RF Return Loss vs RF Frequency
25° C
0
5
10
15
20
25
30
1900 1950 2000 2050 2100 2150 2200
RF Frequency (M H z)
Return Loss (dB)
LO R eturn Loss vs LO Frequency
25° C
0
10
20
30
40
1500 1600 1700 1800 1900 2000 2100 2200
LO Frequency (MH z)
Return Loss (dB)
N oise Fig ure vs Tem p erature
RF = 1950 M Hz, IF = 240 MH z, LO = 0 dB m @ 1710 MH z
4
6
8
10
12
14
-40-200 20406080
Tem perature (°C)
Noise Figure (dB)
Input P1dB vs Tem perature
RF = 1950 M Hz, IF = 240 MH z, LO = 0 dB m @ 1710 MH z
4
6
8
10
12
14
-40-200 20406080
Tem perature (°C)
Input P1dB (dBm)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 9 of 9 April 2010
CV211-2A
UMTS/WiMax-band Dual-Branch Downconverter
CV211-2AF Mechanical Information
This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260°C reflow temperature) and leaded (maximum
245°C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Outline Drawing
Mounting Configuration / Land Pattern
Product Marking
The component will be lasermarked with a
“CV211-2AF” product label with an
alphanumeric lot code on the top surface of the
package.
Tape and reel specifications for this part will be
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1B
Value: Passes 500V to <1000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class III
Value: Passes 500V to <1000V
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 2 at +260°C convection reflow
Standard: JEDEC Standard J-STD-020
Functional Pin Layout
Pin Function Pin Function
1 Channel 1 Mixer
RF Input 15 N/C or GND
2 GND 16 GND
3 LO Amp Bias 17 LO input
4 GND 18 GND
5 N/C or GND 19 N/C or GND
6 GND 20 GND
7 Channel 2 Mixer
/ RF Input 21 +5 V
8 GND 22 GND
9 Channel 2 Mixer
/ IF Output 23 Channel 1
IF Amp Output /
Bias
10 GND 24 GND
11 Channel 2
IF Amp Input 25 Channel 1
IF Amp Input
12 GND 26 GND
13 Channel 2
IF Amp
Output / Bias 27 Channel 1
Mixer
IF Output
14 GND 28 GND
