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Symbol Test Conditions Maximum Ratings
IdAV TC = 100°C (diode) 20 A
IdAV ①(module) 40 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A
VR = 0 t = 8.3 ms (60 Hz), sine 320 A
TVJ = TVJM t = 10 ms (50 Hz), sine 260 A
VR = 0 t = 8.3 ms (60 Hz), sine 280 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 450 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 430 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 340 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 330 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS IISOL £ 1 mA 2500 V~
MdMounting torque (M4) 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight typ. 30 g
VRSM VRRM Standard
V V Types
900 800 VBO 40-08NO6
1300 1200 VBO 40-12NO6
1700 1600 VBO 40-16NO6
IdAV = 40 A
VRRM = 800-1600 V
Features
●Isolation voltage 2500 V~
●Planar passivated chips
●Low forward voltage drop
Applications
●Supplies for DC power equipment
●Input rectifiers for PWM inverter
●Battery DC power supplies
●Field supply for DC motors
Advantages
●Easy to mount
●Space and weight savings
Data according to IEC 60747 and refer to a single diode unless otherwise stated
① for resistive load at bridge output
Symbol Test Conditions Characteristic Values
IRVR= VRRM;T
VJ = 25°C£0.3 mA
VR= VRRM;T
VJ = TVJM £5mA
VFIF= 20 A; TVJ = 25°C£1.15 V
VT0 For power-loss calculations only 0.80 V
rTTVJ = TVJM 13 mW
RthJC per diode; DC current 1.7 K/W
per module 0.42 K/W
RthCH per diode, DC current typ. 0.3 K/W
per module typ. 0.08 K/W
dSCreeping distance on surface 8 mm
dACreepage distance in air ③4mm
aMax. allowable acceleration 50 m/s2
VBO 40
Single Phase
Rectifier Bridge
008
+
–
~
~~
~
–+
miniBLOC, SOT-227 B
E72873
M4 screws (4x)
supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 37.80 38.30 1.489 1.509
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08
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© 2000 IXYS All rights reserved 2 - 2
0.001 0.01 0.1 1
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23456789110
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103
0.00.51.01.52.0
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0 20 40 60 80 100 120 140
0.001 0.01 0.1 1 10
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0.4
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1.2
1.6
2.0
I2t
IFSM
IF
A
VFtstms
Ptot
W
Id(AV)M
ATamb
ts
K/W
A2s
0 20 40 60 80 100 120 140
0
10
20
30
40
50
Id(AV)M
TC
A
V
A
°C°C
VBO 40
TVJ = 45°C
50Hz, 80% VRRM VR = 0 V
Fig. 1 Forward current versus voltage
drop per diode Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Max. forward current versus case
temperature
Fig. 6 Transient thermal impedance junction to case
RthHA :
0.1 K/W
0.5 K/W
1.0 K/W
2.0 K/W
4.0 K/W
7.0 K/W
TVJ = 150°C
TVJ = 45°C
TVJ=125°C
TVJ= 25°C
TVJ = 150°C
ZthJC
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.081 0.00024
2 0.1449 0.0036
3 0.2982 0.0235
4 0.735 0.142
5 0.441 0.7
VBO 40
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