VBO 40 IdAV = 40 A VRRM = 800-1600 V Single Phase Rectifier Bridge VRSM V 900 1300 1700 VRRM V 800 1200 1600 + Standard Types ~ ~ ~ VBO 40-08NO6 VBO 40-12NO6 VBO 40-16NO6 miniBLOC, SOT-227 B E72873 ~ - - Symbol Test Conditions Maximum Ratings IdAV IdAV TC = 100C (diode) (module) IFSM TVJ = 45C; VR = 0 + Features Isolation voltage 2500 V~ Planar passivated chips Low forward voltage drop A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 300 320 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 260 280 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 430 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 340 330 A2s A2s -40...+150 150 -40...+125 C C C 2500 V~ IISOL 1 mA VISOL 50/60 Hz, RMS Md Mounting torque (M4) Terminal connection torque (M4) Weight typ. Symbol Test Conditions IR VR = VRRM; VR = VRRM; TVJ = 25C TVJ = TVJM 0.3 5 mA mA VF IF TVJ = 25C 1.15 V VT0 rT For power-loss calculations only TVJ = TVJM 0.80 13 V mW RthJC per diode; DC current per module per diode, DC current per module 1.7 0.42 0.3 0.08 K/W K/W K/W K/W 8 4 50 mm mm m/s2 RthCH dS dA a Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors TVJ TVJM Tstg Advantages Easy to mount Space and weight savings 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 = 20 A; g Characteristic Values typ. typ. Creeping distance on surface Creepage distance in air Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated for resistive load at bridge output (c) 2000 IXYS All rights reserved M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.30 1.186 1.489 1.193 1.509 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 008 I2t 20 40 1-2 http://store.iiic.cc/ VBO 40 250 80 A 70 TVJ=125C TVJ= 25C 103 50Hz, 80% VRRM VR = 0 V A A2s 200 IFSM IF 60 I2t TVJ = 45C TVJ = 45C 50 150 TVJ = 150C 2 10 40 100 30 20 TVJ = 150C 50 10 0 0.0 0.5 1.5 V 1.0 101 0 0.001 2.0 0.01 0.1 VF s 1 1 2 3 t Fig. 1 Forward current versus voltage drop per diode Fig. 3 I2t versus time per diode Fig. 2 Surge overload current 200 50 W A 160 40 Id(AV)M RthHA : Ptot 0.1 0.5 1.0 2.0 4.0 7.0 120 80 4 5 6 78 ms910 t K/W K/W K/W K/W K/W K/W 30 20 40 10 0 0 0 10 20 30 40 50 60 A 0 20 40 60 80 100 120 140 C Id(AV)M 0 Tamb Fig. 4 Power dissipation versus direct output current and ambient temperature 20 40 60 80 100 120 140 C TC Fig. 5 Max. forward current versus case temperature 2.0 K/W 1.6 ZthJC 1.2 Constants for ZthJC calculation: 0.8 i 0.4 0.0 0.001 VBO 40 0.01 0.1 s 1 Fig. 6 Transient thermal impedance junction to case (c) 2000 IXYS All rights reserved 1 2 3 4 5 Rthi (K/W) ti (s) 0.081 0.1449 0.2982 0.735 0.441 0.00024 0.0036 0.0235 0.142 0.7 10 t 2-2 http://store.iiic.cc/