SFH 3401
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
Lead (Pb) Free Product - RoHS Compliant
2008-07-30 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 460 nm bis 1080 nm
• Hohe Linearität
• Nur gegurtet lieferbar
Anwendungen
• Umgebungslicht-Detektor
• Lichtschranken
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
Bestellnummer
Ordering Code
Fotostrom , (Ee=0,1mW/cm2,λ=950nm VCE = 5 V)
Photocurrent
Ipce (µA)
SFH 3401 Q65110A2635 63...320
SFH 3401-2/3 Q65110A2644 100...320
Features
• Especially suitable for applications from
460 nm to 1080 nm
• High linearity
• Available only on tape and reel
Applications
• Ambient light detector
• Photointerrupters
• Industrial electronics
• For control and drive circuits
2008-07-30 2
SFH 3401
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg – 40 …+ 100 °C
Kollektor-Emitterspannung
Collector-emitter voltage
VCE 20 V
Kollektor-Emitterspannung, t< 120 s
Collector-emitter voltage
VCE 70 V
Kollektorstrom
Collector current
IC50 mA
Kollektorspitzenstrom, τ < 10 µs
Collector surge current
ICS 100 mA
Emitter-Kollektorspannung
Emitter-collector voltage
VEC 7V
Verlustleistung, TA = 25 °C
Total power dissipation
Ptot 120 mW
Wärmewiderstand für Montage auf PC-Board
Thermal resistance for mounting on pcb
RthJA 450 K/W
SFH 3401
2008-07-30 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λSmax 850 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ460 …1080 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A0.55 mm2
Abmessungen der Chipfläche
Dimensions of chip area
L×B
L×W
1×1mm×mm
Halbwinkel
Half angle
ϕ± 60 Grad
deg.
Kapazität, VCE = 0 V, f = 1 MHz, E=0
Capacitance
CCE 15 pF
Kapazität, VCB = 0 V, f = 1 MHz, E=0
Capacitance
CCB 45 pF
Kapazität, VEB = 0 V, f = 1 MHz, E=0
Capacitance
CEB 19 pF
Dunkelstrom
Dark current
VCE = 10 V, E=0
ICEO 3 (≤ 200) nA
Fotostrom der Kollektor-Basis Fotodiode
Photocurrent of collektor-base photodiode
Ee = 0.1 mW/cm2, VCB = 5 V
Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V
IPCB
IPCB
0.28
4.8
µA
µA
2008-07-30 4
SFH 3401
Directional Characteristics Srel = f (ϕ)
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
-1 -2 -3
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.1 mW/cm2, VCE = 5 V
Ev = 1000 Ix, Normlicht A/
standard light A, VCE = 5 V
IPCE
IPCE
63 …125
1.65
100 …200
2.6
160 …320
4.2
µA
mA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf16 24 34 µs
Kollektor-Emitter-
Sättigungsspannung
Collector-emitter saturation voltage
IC = IPCEmin1) × 0.3,
Ee = 0.1 mW/cm2
VCEsat 170 170 170 mV
Stromverstärkung
Current gain
Ee = 0.1 mW/cm2, VCE = 5 V
IPCE/IPCB 340 530 860 –
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.
1) IPCEmin is the min. photocurrent of the specified group.
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
SFH 3401
2008-07-30 5
Rel. Spectral Sensitivity,
Srel = f (λ)
Photocurrent IPCE = f (TA),
VCE = 5 V, normalized to 25 °C
Photocurrent
IPCE = f (VCE) SFH 3401-3
λ
OHF02332
0
rel
S
400
10
20
30
40
50
60
70
80
%
100
500 600 700 800 900 nm 1100
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
V
OHF00327
ce
001020 30 40 50 60 70V
mA
pce
Ι
1.0 mW/cm
0.5
1.0
1.5
2.0
2.5
3.0
2
2
0.5 mW/cm
0.25 mW/cm
2
0.1 mW/cm
2
Photocurrent
IPCE = f (Ee), VCE = 5 V
Dark Current
ICEO = f (TA), VCE = 10 V, E = 0
Dark Current
ICEO = f (VCE), E = 0
E
OHF00326
e
-3
10
pce
Ι
-4
10
10
1
mA
2
mW/cm10
-2
10
0
10
-3
10
-2
10
-1
0
10 1
2
3
T
OHF02342
A
0
CEO
Ι
-1
10
10
0
10
1
10
2
10
3
nA
20 40 60 80 100˚C
V
OHF02341
CE
0
CEO
Ι
-2
10
10
-1
10
0
10
1
10
2
nA
10 20 30 40 50 70V
Collector-Emitter Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
Collector-Base Capacitance
CCB = f (VCB), f = 1 MHz, E = 0
Emitter-Base Capacitance
CEB = f (VEB), f = 1 MHz, E = 0
V
OHF02344
CE
CE
C
0
10 -2 -1
10 0
10 1
10 10 2
V
pF
5
10
15
20
V
OHF00332
CB
0
CB
C
5
10
15
20
25
30
35
40
45
50
V
pF
10
-2 -1
10
0
10
1
10
2
10
V
OHF00333
EB
0
EB
C
2
4
6
8
10
12
14
16
18
20
V
pF
10 -2 -1
10 0
10 1
10 2
10
SFH 3401
2008-07-30 6
Total Power Dissipation
Ptot = f (TA)
T
OHFD0228
A
0
tot
P
020 40 60 80 C 100
mW
20
40
60
80
100
120
140
Photocurrent
IPCE = f (VCE), IB = Parameter
V
OHF00334
CE
0
PCE
Ι
0
1
2
3
4
5
6
mA
24 6 8 10 12 14 16 V 20
1A
A2
A3
A4
A5
A6 µ
µ
µ
µ
µ
µ
SFH 3401
2008-07-30 7
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Empfohlenes Lötpaddesign
Recommended Solderpad Design
Maße in mm / Dimensions in mm.
Anschlussbelegung
Pin configuration
Pin 1 = Kollektor / collector
Pin 2 = Basis / base
Pin 3 = Emitter / emitter
OHF02393
1.8 2.4
1.3
1.8
Padgeometrie für
verbesserte Wärmeableitung
heat dissipation
Paddesign for improved
1
0.3
2008-07-30 8
SFH 3401
Lötbedingungen Vorbehandlung nach JEDEC Level 4
Soldering Conditions Preconditioning acc. to JEDEC Level 4
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
PPublished by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C
+0 ˚C
-5 ˚C
245 ˚C
±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C
-0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
