Philips Semiconductors Product specification a N-channei silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose 3 amplifiers in thick and thin-film (Ij circuits. 9 Jd {~ PINNING i | 2 1 drain tl Top view MAM385 2 = source 3 = gate Note : Drain and source are Fig.1 Simplified outline and symbol, SOT23. interchangeable. Marking code BFT46 = M3p QUICK REFERENCE DATA Drain-source voltage +Vbs max. 25 V Gate-source voltage (open drain) -Veso max. 25 V Total power dissipation up to Tamp = 40 C Prot max. 250 mW Drain current Vps = 10 V; Veg = 0 | > 0.2 mA oss < 1,5 mA Transfer admittance (common source) Ip = 0,2 MA; Vpg = 10 V; f= 1 kHz lytsl > 05 ms Equivalent noise voltage Vps = 10 V; Ip = 200 pA; B = 0,6 to 100 Hz Vn < 0,5 pV December 1997 432Philips Semiconductors Product specification N-channel silicon FET BFT46 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage *Vps max. 25 V Drain-gate voltage (open source) Voeo max. 25 V Gate-source voltage (open drain) -Veso max. 25 V Drain current Ip max. 10 mA Gate current Ig max. 5 mA Total power dissipation up to Tamb = 40 C") Prot max. 250 mW Storage temperature range Tstg -65 to +150 C Junction temperature Tj max. 150 C THERMAL RESISTANCE From junction to ambient!) Rin i-a = 430 KAW Note 1. Mounted on a ceramic substrate of 8 mm x 10 mm x 0,7 mm. CHARACTERISTICS T; = 25 C unless otherwise specified Gate cut-off current -Ves = 10 V; Vps = 0 -lgss < 0,2 nA Drain current Vos =10V; Ves =0 Ipss 0,2 mA < 15 mA Gate-source voltage Ip = 50 pA; Vpg = 10 V 0,1 V -Ves 1,0 V Gate-source cut-off voltage Ip = 0,5 nA; Vos =10V -Vipyes < 1,2 V y-parameters at f = 1 kHz; Vos =10V; Ves = 0; Tamb = 25 C Transfer admittance lyts! 1,0 mS Output admittance lYos | 10 ps Vos = 10 V; Ip = 200 DA; Tamp = 25 C Transfer admittance lyis | 0,5 mS Output admittance lYos| 5 us Input capacitance at f = 1 MHz, Vos =10V; Ves = 0; Tamb = 25C Cis < 5 pF Feedback capacitance at f = 1 MHz; Vps = 10 V; Veg = 0; Tamb = 25 C Crs < 1,5 pF Equivalent noise voltage Vos = 10 V; Ip = 200 WA; Tamp = 25 C B = 0,6 to 100 Hz Vn < 0,5 pV December 1997 433Philips Semiconductors Product specification N-channel silicon FET BFT46 MDA245 me LETT (mw) 200 \ 100 \ 0 40 80 120 160 200 Tamb CC) Fig.2 Power derating curve. MDA272 1.6 'p (mA) 1.25 0.75 0.5 0.25 -0.75 -0.5 -0.25 0 5 1a 1.25 -1 5 2a Vag (Vv) Vps () Fig.3 Typical values. Vpg = 10 V; Tj = 25 C. December 1997 434Philips Semiconductors Product specification N-channel silicon FET BFT46 1 MDA273 1.25 MDA274 Vv (P)GS ) (V) at (mA) ID=0.5 nA 0.75 1 05 0.75 0.25 05 0 0.25 50 100 150 0 05 1 1.5 TEC) Ipgg (mA) at Vgg = 0 Fig.4 Typical values. Vps = 10 V. Fig.5 Correlation between Vip)gg and ipss. Vos = 10 V; Tj = 25 C. MDA269 MDA270 3 5 LL Wosl its! a (mS) (mS) 4 2 4 / typ 3 / 1 / 1 0 0 0.25 0.5 Ip (ma) 0.75 0 0.25 05 1 may 975 Fig.6 |yj5/ versus Ip. Vpg = 10 V; f = 1 kHz; Fig.7 lYos| versus Ip. Vps = 10 V; f = 1 kHz; Tamb = 25C. Tamb = 25C. December 1997 435Philips Semiconductors Product specification N-channel silicon FET BFT46 103 MDA271 5 MDA266 Vos! Cis | (HAV) (pF) 102 4 RQ lh =al Po | 10 2 | - vps) 0 -1 -2 ~3 Ves) 4 Fig.8 los | versus Vog. Ip = 0,4 mA; f = t kHz; Fig.9 Typical values. Vos = 10 V; Tamp = 25 C. Tamb = 25 C. 1s MDA267 10 MDA268 ass Crs {n) (pF) 1 1 J 1071 0.5 10? 105 50 100 150 Q -1 -2 -3 Ves W) -4 70) Fig.10 Typical values. Vps = 10 V, Tamp = 25 C. Fig.11 lags versus Tj). -Vess = 10V; Vps = 0. December 1997 436Philips Semiconductors Product specification N-channel silicon FET BFT46 404 MDA264 en (nVNHz) 103 102 10 0 102 408 104 105 (Hz) 10 Fig.12 Vos =10 V; lb =0,2 mA; Tamb = 25C. 104 MDA265 in (fA Hz) 103 102 10 0 10? 103 104 108 4 (H2) 108 Fig.13 Vps = 10 V; Ip = 0,2 MA; Tamp = 25 C. December 1997 437