DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
© 1988, 2001
Document No. P11305EJ5V0DS00 (5th edition)
Date Published March 2001 NS CP(K)
Printed in Japan
PHOTOCOUPLER
PS2506-1,-2,-4, PS2506L-1,-2,-4
HIGH ISOLATION VOLTAGE
AC INPUT, DARLINGTON TRANSISTOR TYPE
MULTI PHOTOCOUPLER SERIES
The mark
shows major revised poi nts.
NEPOCTM Series
DESCRIPTION
The PS2506-1, -2, -4 and PS2506L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
and an NPN silicon darlington connected phototransistor.
The PS2506-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2506L-1, -2, -4 are lead bending type
(Gull-wing) for surface mount.
FEATURES
AC input response
High isolation voltage (BV = 5 000 Vr.m.s.)
High current transfer ratio (CTR = 2 000 % TYP.)
High-speed switching (tr, tf = 100
µ
s TYP.)
Ordering number of tape product: PS2506L-1-E3, E4, F3, F4, PS2506L-2-E3, E4
Safety standards
UL approved: File No. E72422 (S)
APPLICATIONS
Power supply
Telephone/FAX
FA/OA equipment
Programmable logic controller
Data Sheet P11305EJ5V0DS
2
PS2506-1,-2,-4,PS2506L-1,-2,-4
PACKAGE DIMENSIONS (UNIT : mm)
DIP Type (New package)
PS2506-1TOP VIEW
3.5±0.3
4.15±0.43.2±0.4
2.54
1.25±0.15 0.50±0.10
0.25
M
4.6±0.35
6.5+0.7
–0.5
0 to 15˚
7.62
0.25
+0.1
–0.05
12
431. Anode,
Cathode
2. Cathode,
Anode
3. Emitter
4. Collector
Caution New package 1-ch only
DIP Type
PS2506-4
PS2506-1TOP VIEW
TOP VIEW
9.7±0.5
6.5
+0.7
–0.5
3.5±0.3
4.15±0.43.3±0.5
2.54
1.25±0.15 0.50±0.10
0.25
M
0 to 15˚
7.62
0.25
+0.1
–0.05
PS2506-2
4.6±0.5
6.5
+0.7
–0.5
3.5±0.3
4.15±0.43.3±0.5
2.54
1.25±0.15 0.50±0.10
0.25
M
0 to 15˚
7.62
0.25
+0.1
–0.05
19.8±0.5
6.5
+0.7
–0.5
0 to 15˚
7.62
0.25
+0.1
–0.05
3.5±0.3
4.15±0.43.3±0.5
2.54
1.25±0.15 0.50±0.10
0.25
M
TOP VIEW
12
43
1234
8765
12345678
16 15 14 13 12 11 10 9
1. Anode,
Cathode
2. Cathode,
Anode
3. Emitter
4. Collector
1, 3. Anode, Cathode
2, 4. Cathode, Anode
5, 7. Emitter
6, 8. Collector
1, 3, 5, 7. Anode, Cathode
2, 4, 6, 8. Cathode, Anode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
Data Sheet P11305EJ5V0DS 3
PS2506-1,-2,-4,PS2506L-1,-2,-4
Lead Bending Type (New package)
PS2506L-1
TOP VIEW
0.25
M
4.6±0.35
6.5+0.7
–0.5
3.5±0.3
2.54
1.25±0.15
0.15
0.9±0.25
9.60±0.4
0.25+0.1
–0.05
0.1+0.1
–0.05
12
431. Anode,
Cathode
2. Cathode,
Anode
3. Emitter
4. Collector
Caution New package 1-ch only
Lead Bending Type
PS2506L-2
TOP VIEW
PS2506L-1
TOP VIEW
PS2506L-4 TOP VIEW
4.6±0.5
6.5
+0.7
–0.5
0.25
M
3.5±0.3
2.54
1.25±0.15
0.15
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
9.7±0.5
6.5
+0.7
–0.5
2.54
1.25±0.15
0.25
M
0.15
3.5±0.3
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
19.8±0.5
6.5
+0.7
–0.5
2.54
1.25±0.15
0.25
M
3.5±0.3
0.15
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
12
43
1234
8765
12345678
16 15 14 13 12 11 10 9
1. Anode,
Cathode
2. Cathode,
Anode
3. Emitter
4. Collector
1, 3. Anode, Cathode
2, 4. Cathode, Anode
5, 7. Emitter
6, 8. Collector
1, 3, 5, 7. Anode, Cathode
2, 4, 6, 8. Cathode, Anode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
Data Sheet P11305EJ5V0DS
4
PS2506-1,-2,-4,PS2506L-1,-2,-4
MARKING EXAMPLE
2506
MD003 PS2506-2
MD003
D
E
PS2506-1 PS2506-2, -4
Assembly Lot
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
No. 1 pin
Mark
Package
New PKG
Standard PKG
Made in Japan Made in Taiwan
No. 1 pin
Mark
M
D
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
New PKG
Standard PKG
Made in Japan Made in Taiwan
003
M003
Country Assembled
Type Number
Assembly Lot
DD
Data Sheet P11305EJ5V0DS 5
PS2506-1,-2,-4,PS2506L-1,-2,-4
ORDERING INFORMATION
Part Number Package Packi ng Styl e Applic at i on Part Number*1
PS2506-1 4-pin DIP Magazine c ase 100 pcs PS2506-1
PS2506L-1
PS2506L-1-E3 Embossed Tape 1 000 pcs/reel
PS2506L-1-E4
PS2506L-1-F3 Embossed Tape 2 000 pcs/reel
PS2506L-1-F4
PS2506-2 8-pin DIP Magazine c ase 45 pcs PS2506-2
PS2506L-2
PS2506L-2-E3 Embossed Tape 1 000 pcs/reel
PS2506L-2-E4
PS2506-4 16-pin DIP Magazine c ase 20 pcs PS2506-4
PS2506L-4
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
°°
°C, unless otherwise specified)
Parameter Symbol Ratings Unit
PS2506-1,
PS2506L-1 PS2506-2,-4
PS2506L-2,-4
Diode Forward Current (DC) IF±80 mA
Power Dissipati on Derating
PD/°C 1.5 1.2 mW/°C
Power Dissipati on PD150 120 mW/ch
Peak Forward Current*1 IFP ±1 A
Transistor Collector to Emitter Voltage VCEO 40 V
Emitter to Collector Voltage VECO 6V
Collector Current IC200 160 mA/ch
Power Dissipati on Derating
PC/°C 2.0 1.6 mW/°C
Power Dissipati on PC200 160 mW/ch
Isolat i on Voltage*2 B V 5 000 Vr.m. s.
Operating Am bi ent Tem perature TA–55 to +100 °C
Storage Temperat ure Tstg –55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
Data Sheet P11305EJ5V0DS
6
PS2506-1,-2,-4,PS2506L-1,-2,-4
ELECTRICAL CHARACTERISTICS (TA = 25 °
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VFIF = ±10 mA 1.17 1.4 V
Terminal Capaci tance CtV = 0 V, f = 1.0 MHz 100 pF
Transistor Collector to E m i t ter D ar k
Current ICEO VCE = 40 V, I F = 0 m A 400 nA
Coupled Current Transfer Ratio
(IC/IF)CTR IF = ±1 mA, VCE = 2 V 200 2 000 %
CTR Ratio *1 CTR1/
CTR2 IF = 1 mA, VCE = 2 V 0.3 1.0 3.0
Collector Saturatio n
Voltage VCE(sat) IF = ±1 mA, IC = 2 m A 1.0 V
Isolat i on Resistance RI-O VI-O = 1.0 kVDC 1011
Isolat i on Capacitance CI-O V = 0 V, f = 1. 0 M Hz 0.5 pF
Rise Time*2 trVCC = 10 V, I C = 2 mA, RL = 100 100
µ
s
Fall Time*2 tf100
*1 CTR1 = IC1/IF1, CTR2 = IC2/IF2
I
F1
I
F2
I
C1
I
C2
V
CE
*2 Test circuit for switching time
V
CC
V
OUT
R
L
= 100
50
I
F
Pulse Input
PW = 1 ms
Duty Cycle = 1/10
Data Sheet P11305EJ5V0DS 7
PS2506-1,-2,-4,PS2506L-1,-2,-4
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
150
100
50
02550
75 100 125 150
10
1
100
1000
10 000
–50 –25 0 25 50 75 100 0.2
0.5
1
5
10
200
50
0.4
100
0.6 0.8 1.0 1.2 1.4 1.6
5 mA
2 mA
1 mA
0.5 mA
I
F
= 0.1 mA
0.2 mA
1.5 mW/˚C
1.2 mW/˚C
PS2506-1
PS2506L-1
PS2506-2
PS2506L-2
PS2506-4
PS2506L-4
V
CE
= 2 V
5 V
10 V
24 V
40 V
–1.0
80
–1.5
–40
–80
–60
0
–0.5 0.5 1.51.0
0
–20
40
20
60
0.5
0.1
1
5
10
50
100
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0 ˚C
–25 ˚C
–55 ˚C
+60 ˚C
+25 ˚C
T
A
= +100 ˚C
Diode Power Dissipation P
D
(mW)
Transistor Power Dissipation P
C
(mW)
Ambient Temperature T
A
(˚C)
Forward Current I
F
(mA)
Forward Voltage V
F
(V)
Collector to Emitter Dark Current I
CEO
(nA)
Collector Saturation Voltage V
CE(sat)
(V)
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Current I
C
(mA) Forward Current I
F
(mA)
Forward Voltage V
F
(V)
FORWARD CURRENT vs.
FORWARD VOLTAGE
150
100
50
02550
75 100 125 150
2 mW/˚C
1.6 mW/˚C
200
PS2506-2
PS2506L-2
PS2506-4
PS2506L-4
PS2506-1
PS2506L-1
Data Sheet P11305EJ5V0DS
8
PS2506-1,-2,-4,PS2506L-1,-2,-4
1.4
25
1.2
1.0
0.8
0.6
0.4
0.2
–50 0–25 50 75 100
8 000
0
1 000
2 000
3 000
4 000
5 000
6 000
7 000
V
CE
= 2 V
0.1 0.5 1 5 10 30
1 000
500
100
50
10
5
2100
50 500 1 k 5 k
V
CC
= 5 V,
I
C
= 2 mA,
CTR = 2 280 %
t
f
500
50
1 k300
10
100
1 000
5 000
10 000
5 k 10 k 50 k
1 500
2 000
2 500
3 000
0
500
1 000
V
CE
= 2 V
50 10010 500
V
CC
= 5 V,
I
F
= 1 mA,
CTR = 2 280 %
t
d
t
s
30 500 100 k
t
f
t
s
t
r
t
d
t
r
0
20
40
60
80
100
120
140
160
246810
5 mA
2 mA
1 mA
I
F
= 0.5 mA
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 1 mA, V
CE
= 2 V
Forward Current I
F
(mA)
Ambient Temperature T
A
(˚C)
Load Resistance R
L
()
Normalized Current Transfer Ratio CTR
Current Transfer Ratio CTR (%)
Load Resistance R
L
()
Switching Time t ( s)
µ
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
µ
Forward Current I
F
( A)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
µ
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Sample A
B
C
DSample A
B
C
D
Data Sheet P11305EJ5V0DS 9
PS2506-1,-2,-4,PS2506L-1,-2,-4
10 10
2
10
3
10
4
10
5
10
6
0.6
0
0.2
0.4
0.8
1.0
1.2
T
A
= 25 oC
T
A
= 60 oC
510
0.2 0.5 1 2 20 50 100 200
I
F
= 1 mA,
V
CE
= 2 V
–20
–15
–10
–5
0
R
L
= 100
Time (Hr)
CTR (Relative Value)
LONG TERM CTR DEGRADATION
Frequency f (kHz)
Normalized Gain G
V
FREQUENCY RESPONSE
I
F
= 1 mA
Remark The graphs indicate nominal characteristics.
Data Sheet P11305EJ5V0DS
10
PS2506-1,-2,-4,PS2506L-1,-2,-4
TAPING SPECIFICATIONS (UNIT : mm)
Tape Direction
Outline and Dimensions (Tape)
Outline and Dimensions (Reel)
Packing: 1 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.5
φ
21.0±0.8
φ
16.4
+2.0
–0.0
1.6
250
φ
80.0±5.0
φ
PS2506L-1-E3 PS2506L-1-E4
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
4.0±0.1
0.4
5.3±0.1
8.0±0.1
7.5±0.1
16.0±0.3
10.3±0.1
1.5
+0.1
–0
φ
Data Sheet P11305EJ5V0DS 11
PS2506-1,-2,-4,PS2506L-1,-2,-4
Tape Direction
Outline and Dimensions (Tape)
Outline and Dimensions (Reel)
Packing: 2 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.5
φ
21.0±0.8
φ
16.4
+2.0
–0.0
80.0±5.0
φ
PS2506L-1-F3 PS2506L-1-F4
1.5
330
φ
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
4.0±0.1
0.4
5.3±0.1
8.0±0.1
7.5±0.1
16.0±0.3
10.3±0.1
1.5
+0.1
–0
φ
Data Sheet P11305EJ5V0DS
12
PS2506-1,-2,-4,PS2506L-1,-2,-4
Tape Direction
Outline and Dimensions (Tape)
Outline and Dimensions (Reel)
Packing: 1 000 pcs/reel
16.4
+2.0
–0.0
80.0±5.0
φ
330
φ
2.0±0.5
R 1.0
13.0±0.5
φ
21.0±0.8
φ
PS2506L-2-E3 PS2506L-2-E4
1.5
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
10.4±0.1
12.0±0.1
1.5
+0.1
–0
7.5±0.1
10.3±0.1
16.0±0.3
4.0±0.1
0.3
Data Sheet P11305EJ5V0DS 13
PS2506-1,-2,-4,PS2506L-1,-2,-4
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
Peak reflow temperature 235 °C or below (package surface temperature)
Time of temperature higher than 210 °C 30 seconds or less
Number of reflows Three
Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
60 to 120 s
(preheating)
210 ˚C
100 to 160 ˚C
Package Surface Temperature T (˚C)
Time (s)
(heating)
to 10 s
to 30 s
235 ˚C (peak temperature)
Recommended Temperature Profile of Infrared Reflow
(2) Dip soldering
Temperature 260 °C or below (molten solder temperature)
Time 10 seconds or less
Number of times One (Allowed to be dipped in solder including plastic mold portion.)
Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
(3) Cautions
•Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
corrector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute
maximum ratings .
Data Sheet P11305EJ5V0DS
14
PS2506-1,-2,-4,PS2506L-1,-2,-4
[MEMO]
Data Sheet P11305EJ5V0DS 15
PS2506-1,-2,-4,PS2506L-1,-2,-4
[MEMO]
PS2506-1,-2,-4,PS2506L-1,-2,-4
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEPOC is a trademark of NEC Corporation.
M8E 00. 4
The information in this document is current as of March, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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